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| to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors 2SC3311A transistor (npn) features z optimum for high-density mounting z allowing supply with the radial taping z complementary to 2sa1309a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 7 v collector cut-off current i cbo v cb =10v,i e =0 0.1 a collector cut-off current i ceo v ce =10v,i b =0 1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =10v, i c =2ma 160 460 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.3 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 3.5 pf transition frequency f t v ce =10v,i c =2ma, f=200mhz 150 mhz classification of h fe rank q r s range 160-260 210-340 290-460 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current 0.1 a p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 417 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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