symbol v ds v gs i dm t j , t stg symbol ty p max 73 90 96 125 r jl 63 75 junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d -6.5 -5 -60 pulsed drain current c power dissipation b t a =25c continuous drain current maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage -12 c/w maximum junction-to-ambient ad steady-state c/w w maximum junction-to-lead steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO8807 dual p-channel enhancement mode field effect transistor features v ds (v) = -12v i d = -6.5 a (v gs = -4.5v) r ds(on) < 20m ? (v gs = -4.5v) r ds(on) < 24m ? (v gs = -2.5v) r ds(on) < 30m ? (v gs = -1.8v) esd protected! general description the AO8807 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch. AO8807 and AO8807l are electrically identical. - rohs compliant -halogen free g1 s1 s1 d1 g2 s2 s2 1 2 3 4 8 7 6 5 tssop-8 top view d2 g1 d1 s1 rg g2 d2 s2 rg alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO8807 symbol min typ max units bv dss -12 v -1 t j =55c -5 i gss 10 a v gs(th) -0.35 -0.53 -0.85 i d(on) -60 a 16 20 t j =125c 23 28 19 24 m ? 23 30 m ? 28 36 m ? g fs 45 s v sd -0.56 -1 v i s -1.4 a c iss 1740 2100 pf c oss 334 pf c rss 200 pf r g 1.3 1.7 k ? q g 19 23 nc q gs 4.5 nc q gd 5.3 nc t d(on) 240 ns t r 580 ns t d(off) 7 s t f 4.2 s t rr 22 27 ns q rr 17 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-6.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.5v, i d =-5a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-6.5a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-12v, v gs =0v zero gate voltage drain current v ds =0v, v gs =8v gate-body leakage current m ? v gs =-2.5v, i d =-6a i s =-1a,v gs =0v v ds =-5v, i d =-6.5a v gs =-1.8v, i d =-5.5a i f =-6.5a, di/dt=100a/ s v gs =0v, v ds =-6v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-6v, i d =-6.5a gate source charge gate drain charge turn-on rise time turn-off delay time v gs =-4.5v, v ds =-6v, r l =0.9 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delay time dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. rev1 :april 2010 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO8807 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 012345 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) v gs =-1.5v -2v -3v -4.5v -2.5v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 10 15 20 25 30 35 40 45 0 2 4 6 8 101214161820 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m ? ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics(note e) -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance i d =-6a, v gs =-2.5v i d =-5.5a, v gs =-1.8v i d =-5a, v gs =-1.5v 10 15 20 25 30 35 40 45 50 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m ? ) i d =-6.5a 25c 125c 25c 125c v ds =-5v v gs =-1.5v v gs =-1.8v v gs =-4.5v i d =-6.5a, v gs =-4.5v v gs =-2.5v alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO8807 typical electrical and thermal characteristic s 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 2800 024681012 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 20 40 60 80 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =125c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v ds =-6v i d =-6.5a t j(max) =150c t a =25c 0 0 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 s 1s 10s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO8807 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off - + ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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