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| r08ds0058ej0100 rev.1.00 page 1 of 18 jun 11, 2012 the mark ps9905 chapt r08ds0058ej0100 rev.1.00 page 2 of 18 jun 11, 2012 package dimensions (unit: mm) photocoupler construction parameter unit (min.) air distance 14.5 mm outer creepage distance 14.5 mm isolation distance 0.4 mm 16.70.4 0.80.25 0.20.15 0.250.15 3.50.2 3.70.25 1.27 0.50.1 0.25 m 8 1 5 4 6.7 0.3 13.8 0.3 ps9905 chapt r08ds0058ej0100 rev.1.00 page 3 of 18 jun 11, 2012 functional diagram 8 7 5 2 3 led output on h off tr. 1 on off tr. 2 off on l input h l (tr. 2) (tr. 1) shield marking example 9905 r n231 2 n 31 no. 1 pin mark year assembled (last 1 digit) rank code week assembled assembly lot type number company initial ps9905 chapt r08ds0058ej0100 rev.1.00 page 4 of 18 jun 11, 2012 ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps9905 ps9905-y-ax 10 pcs (tape 10 pcs cut) PS9905-F3 ps9905-y-f3-ax embossed tape 1 000 pcs/reel standard products (ul, csa, semko approved) ps9905-v ps9905-y-v-ax 10 pcs (tape 10 pcs cut) ps9905-v-f3 ps9905-y-v-f3-ax embossed tape 1 000 pb-free (ni/pd/au) pcs/reel din en60747-5-5 (vde0884-5): 2011-11 approved (option) ps9905 note: *1. for the application of the safety standard, following part number should be used. absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current i f 25 ma peak transient forward current (pulse width < 1 s) i f (tran) 1.0 a reverse voltage v r 5 v power dissipation *1, *6 p d 45 mw detector high level peak output current *2 i oh (peak) 2.5 a low level peak output current *2 i ol (peak) 2.5 a supply voltage (v cc - v ee ) 0 to 35 v output voltage v o 0 to v cc v power dissipation *3, *6 p c 250 mw isolation voltage *4 bv 7 500 vr.m.s. operating frequency *5 f 50 khz operating ambient temperature t a ? 40 to +110 c storage temperature t stg ? 55 to +125 c notes: *1. derating to be set after 0.8 mw/ c at t a = 85 c or more. *2. maximum pulse width = 10 s, maximum duty cycle = 0.2 % *3. reduced to 5.2 mw/ c at t a = 85 c or more *4. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-4 shorted together, 5-8 shorted together. *5. i oh (peak) 2.0 a ( 0.3 s), i ol (peak) 2.0 a ( 0.3 s) *6. mounted on glass epoxy substrate of 75 mm 115 mm t1.5 mm recommended operating conditions parameter symbol min. typ. max. unit supply voltage (v cc - v ee ) 15 30 v forward current (on) i f (on) 10 12 14 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 110 c ps9905 chapt r08ds0058ej0100 rev.1.00 page 5 of 18 jun 11, 2012 electrical characteristics (v ee = gnd, unless otherwise specified a nd refer to recommended operating conditions) parameter symbol conditions min. typ. *1 max. unit diode forward voltage v f i f = 10 ma, t a = 25 c 1.3 1.56 1.8 v reverse current i r v r = 3 v, t a = 25 c 10 a terminal capacitance c t f = 1 mhz, v f = 0 v, t a = 25 c 30 pf detector high level output current i oh v o = (v cc ? 4 v) *2 0.5 2.0 a v o = (v cc ? 15 v) *3 2.0 low level output current i ol v o = (v ee + 2.5 v) *2 0.5 2.0 a v o = (v ee + 15 v) *3 2.0 high level output voltage v oh i o = ? 100 ma *4 v cc ? 3.0 v cc ? 1.5 v low level output voltage v ol i o = 100 ma 0.1 0.5 v high level supply current i cch v o = open, i f = 12 ma 1.4 3.0 ma low level supply current i ccl v o = open, v f = ? 2 to +0.8 v 1.3 3.0 ma uvlo threshold v uvlo+ v o > 5 v, i f = 12 ma 10.8 12.3 13.4 v v uvlo ? 9.5 11.0 12.5 uvlo hysteresis uvlo hys v o > 5 v, i f = 12 ma 0.4 1.3 v coupled threshold input current (l h) i flh i o = 0 ma, v o > 5 v 2.9 6.0 ma threshold input voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v notes: *1. typical values at t a = 25 c *2. maximum pulse width = 50 s, maximum duty cycle = 0.5%. *3. maximum pulse width = 10 s, maximum duty cycle = 0.2%. *4. v oh is measured with the dc load current in this testing (maximum pulse width = 2 ms, maximum duty cycle = 20%). ps9905 chapt r08ds0058ej0100 rev.1.00 page 6 of 18 jun 11, 2012 switching characteristics (v ee = gnd, unless otherwise specified and refer to recommended operating conditions) parameter symbol conditions min. typ. *1 max. unit propagation delay time (l h) t plh r g = 10 , c g = 10 nf *2 , f = 10 khz, 0.09 0.15 s propagation delay time (h l) t phl duty cycle = 50%, i f = 12 ma 0.1 0.15 s pulse width distortion (pwd) |t phl ? t plh | 0.01 0.075 s propagation delay time (difference between any two products) t phl ? t plh ? 0.1 0.1 s rise time t r 50 ns fall time t f 50 ns uvlo (turn on delay) t uvlo on v o > 5 v, i f = 12 ma 0.8 s uvlo (turn off delay) t uvlo off v o < 5 v, i f = 12 ma 0.6 s common mode transient immunity at high level output |cm h | t a = 25 c, i f = 12 ma, v cc = 30 v, v o (min.) = 26 v, v cm = 1.5 kv 25 kv/ s common mode transient immunity at low level output |cm l | t a = 25 c, i f = 0 ma, v cc = 30 v, v o (max.) = 1 v, v cm = 1.5 kv 25 kv/ s notes: *1. typical values at t a = 25 c *2. this load condition is equivalent to the igbt load at 1 200 v / 75 a. ps9905 chapt r08ds0058ej0100 rev.1.00 page 7 of 18 jun 11, 2012 test circuit fig. 1 i oh test circuit fig. 2 i ol test circuit fig. 3 v oh test circuit fig. 4 v ol test circuit fig. 5 i flh test circuit fig. 6 uvlo test circuit v cc = 15 to 30 v 2.5 v 0.1 f 1 2 3 4 8 7 6 5 i ol i f 0.1 f 1 2 3 4 8 7 6 5 v o > 5 v i f = 12 ma v cc 0.1 f 1 2 3 4 8 7 6 5 v o > 5 v i f = 10 to 14 ma v cc = 15 to 30 v 0.1 f 1 2 3 4 8 7 6 5 v oh 100 ma 0.1 f i f = 10 to 14 ma 1 2 3 4 8 7 6 5 i oh 1 2 3 4 8 7 6 5 v cc = 15 to 30 v 0.1 f v ol 100 ma shield shield shield shield shield shield (v cc -4)v v cc = 15 to 30 v v cc = 15 to 30 v ps9905 chapt r08ds0058ej0100 rev.1.00 page 8 of 18 jun 11, 2012 v cc = 15 to 30 v i f = 12 ma 10 khz 50% duty cycle 0.1 f 1 2 3 4 8 7 6 5 v o 500 10 10 nf t phl t plh i f v out 90% 50% 10% t r t f v cc = 30 v v cm = 1.5 kv 0.1 f 1 a b 2 3 4 8 7 6 5 v o i f v oh 26 v 1 v v ol v cm 0 v v o (switch a: i f = 12 ma) v o (switch b: i f = 0 ma) fig. 7 t plh , t phl , t r , t f test circuit and wave forms fig. 8 cmr test circuit and wave forms t = v t v cm t shield shield + ? ps9905 chapt r08ds0058ej0100 rev.1.00 page 9 of 18 jun 11, 2012 typical characteristics (t a = 25 c, unless otherwise specified) ambient temperature t a ( c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature ambient temperature t a ( c) detector power dissipation p c (mw) detector power dissipation vs. ambient temperature ambient temperature t a ( c) threshold input current i flh (ma) threshold input current vs. ambient temperature 20 40 60 80 120 100 0 60 50 40 30 20 10 20 40 60 80 120 100 0 300 250 200 150 100 50 6.0 5.0 4.0 3.0 2.0 1.0 0 ? 40 ? 200 20406080100 forward current i f (ma) output voltage v o (v) output voltage vs. forward current 1 024 36 5 35 30 25 20 15 10 5 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage 1 0.01 0.1 1 10 100 1.5 2 t a = +110 c +100 c +85 c +50 c +25 c ? 20 c ? 40 c high level output voltage ? supply voltage v oh ? v cc (v) high level output current i oh (a) high level output voltage ? supply voltage vs. high level output current 0 0.5 1.0 1.5 2.5 2.0 0 ? 8 ? 6 ? 4 ? 2 ? 40 c +25 c v cc = 30 v, v ee = gnd, v o > 5 v t a = 25 c, v cc = 30 v, v ee = gnd v cc = 30 v, v ee = gnd, i f = 12 ma t a = +110 c 2.4 remark the graphs indicate nominal characteristics. ps9905 chapt r08ds0058ej0100 rev.1.00 page 10 of 18 jun 11, 2012 forward current i f (ma) propagation delay time, pulse width distortion vs. forward current propagation delay time, pulse width distortion vs. supply voltage supply voltage v cc (v) low level output current i ol (a) low level output voltage v ol (v) low level output voltage vs. low level output current propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) 6 8 10 12 14 16 18 150 100 50 0 15 20 25 30 150 100 50 0 propagation delay time, pulse width distortion vs. load capacitance load capacitance c g (nf) 10 20 30 40 50 150 100 50 0 0 0.5 1.0 1.5 2.5 2.0 8 6 4 2 propagation delay time, pulse width distortion vs. load resistance 0 1020304050 150 100 50 0 load resistance r g ( ) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time, pulse width distortion vs. ambient temperature ambient temperature t a ( c) 0 ? 40 ? 20 20 40 60 80 150 100 50 0 100 ? 40 c +25 c v cc = 30 v, v ee = gnd, i f = 0 ma t a = +110 c t a = 25 c , i f = 12 ma, v cc = 30 v, c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl i f = 12 ma, v cc = 30 v, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25 c , i f = 12 ma, v cc = 30 v, r g = 10 , f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25 c , i f = 12 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25 c , v cc = 30 v, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl remark the graphs indicate nominal characteristics. ps9905 chapt r08ds0058ej0100 rev.1.00 page 11 of 18 jun 11, 2012 ambient temperature t a ( c) supply current vs. ambient temperature high level supply current i cch (ma), low level supply current i ccl (ma) ? 20 0 20 40 80 60 ? 40 2.0 1.5 1.0 0.5 100 ambient temperature t a ( c) supply voltage v cc (v) supply current vs. supply voltage high level supply current i cch (ma), low level supply current i ccl (ma) 15 20 30 25 2.0 0.5 1.0 1.5 high level output voltage ? supply voltage v oh ? v cc (v) high level output voltage ? supply voltage vs. ambient temperature ? 20 0 20 40 80 60 ? 40 0.0 ? 3.0 ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 100 ? 20 0 20 40 80 60 ? 40 100 ambient temperature t a ( c) high level output current i oh (a) high level output current vs. ambient temperature ambient temperature t a ( c) low level output voltage v ol (v) low level output voltage vs. ambient temperature 0.30 0.00 0.05 0.10 0.15 0.20 0.25 ambient temperature t a ( c) low level output current i ol (a) low level output current vs. ambient temperature ? 20 0 20 40 80 60 ? 40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 ? 20 0 20 40 80 60 ? 40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 v cc = 30 v, v ee = gnd, i f = 12 ma, i o = ?100 ma v cc = 30 v, v ee = gnd, i f = 12 ma, v cc ?v o = 4 v v cc = 30 v, v ee = gnd, i f = 0 ma, v o = 2.5 v v cc = 30 v, v ee = gnd, i f = 0 ma, i o = 100 ma v cc = 30 v, v ee = gnd, v o = open i ccl (i f = 0 ma) i cch (i f = 12 ma) t a = 25 c, v ee = gnd, v o = open i cch (i f = 12 ma) i ccl (i f = 0 ma) remark the graphs indicate nominal characteristics. ps9905 chapt r08ds0058ej0100 rev.1.00 page 12 of 18 jun 11, 2012 output voltage vs. supply voltage supply voltage v cc ? v ee (v) output voltage v o (v) 0 5 10 15 20 14 12 10 8 6 4 2 0 t a = 25 c, i f = 12 ma v uvlo+ (12.3 v) uvlo hys v uvlo+ (12.3 v) v uvlo ? (11.0 v) remark the graphs indicate nominal characteristics. ps9905 chapt r08ds0058ej0100 rev.1.00 page 13 of 18 jun 11, 2012 taping specifications (unit: mm) tape direction outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 25.51.0 29.51.0 PS9905-F3 2.00.1 4.00.1 1.750.1 24.00.3 1.5 +0.1 ?0 4.5 max. (17.2) (0.3) 11.50.1 outline and dimensions (tape) (7.2) (4.05) 12.00.1 2.00.2 ps9905 chapt r08ds0058ej0100 rev.1.00 page 14 of 18 jun 11, 2012 recommended mount pad dimensions (unit: mm) 2 0.9 1.27 16.6 ps9905 chapt r08ds0058ej0100 rev.1.00 page 15 of 18 jun 11, 2012 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temperature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220 c 180 c package surface temperature t ( c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260 c max. 120 c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead ps9905 chapt r08ds0058ej0100 rev.1.00 page 16 of 18 jun 11, 2012 (4) cautions ? fluxes avoid removing the residual flux with fr eon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied s uddenly between the photocoupler?s input and ou tput at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. usage cautions 1. this product is weak for stat ic electricity by designed with high-speed integr ated circuit so protect against static electri city when handling. 2. board designing (1) by-pass capacitor of more than 0.1 f is used between v cc and gnd near device. also, ensu re that the di stance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) when designing the printed wiring board, ensure that the pa ttern of the igbt collectors/emitters is not too close to the input block pattern of the photocoupler. if the pattern is too close to the input block and coupling occurs, a sudden fluctua tion in the voltage on the igbt output side might affect the photocoupler?s led input, leading to malfunction or degradation of characteristics. (if the pattern needs to be close to the input block, to prevent the led from lighting during the off state due to the abovementioned coupling, design the input-s ide circuit so that the bi as of the led is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) pin 1, 4 (which is an nc *1 pin) can either be connected directly to the gnd pin on the led side or left open. also, pin 6 (which is an nc *1 pin) can either be connected directly to the gnd pin on the detector side or left open. unconnected pins should not be used as a bypass for signals or for any othe r similar purpose because this may degrade the internal noise environment of the device. note: *1. nc: non-connection (no connection) 3. make sure the rise/fall time of the forward current is 0.5 s or less. 4. in order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 v/ s or less. 5. avoid storage at a high temperature and high humidity. ps9905 chapt r08ds0058ej0100 rev.1.00 page 17 of 18 jun 11, 2012 specification of vde marks license document parameter symbol spec. unit climatic test class (iec 60068- 1/din en 60068-1) 40/110/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, procedure a for type test and random test) u pr = 1.6 u iorm. , p d < 5 pc u iorm u pr 1 600 2 560 v peak v peak test voltage (partial discharge test, procedure b for all devices) u pr = 1.875 u iorm. , p d < 5 pc u pr 3 000 v peak highest permissible overvoltage u tr 12 000 v peak degree of pollution (din en 60664-1 vde0110 part 1) 2 comparative tracking index (iec 60112/di n en 60112 (vde 0303 part 11)) cti 175 material group (din en 60664 -1 vde0110 part 1) iii a storage temperature range t stg ?55 to +125 c operating temperature range t a ?40 to +110 c isolation resistance, minimum value v io = 500 v dc at t a = 25c v io = 500 v dc at t a max. at least 100c ris min. ris min. 10 12 10 11 safety maximum ratings (ma ximum permissible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = tsi tsi isi psi ris min. 175 400 700 10 9 c ma mw ps9905 chapt r08ds0058ej0100 rev.1.00 page 18 of 18 jun 11, 2012 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9905 data sheet description rev. date page summary 0.01 apr 06, 2012 ? first edition issued 1.00 jun 11, 2012 throughout preliminary data sheet data sheet p.1 modification of features p.4 modification of ordering information p.5 modification of absolute maximum ratings p.6 modification of sw itching characteristics pp.7, 8 modifica tion of test circuit pp.9 to 12 addition of typical characteristics p.17 addition of specification of vde marks license document notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. 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