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8 1 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 the mark shows majo r re vised points. the re vised point s can be ea sily search ed b y co pyi ng an "" in th e pdf file and sp ecifying it in the " f ind what:" field. t e e h s a t a d ps9905 2.5 a ou tput curren t , hi gh cmr, i g bt gate drive, 8-pi n lsdip ph ot oc oupler f o r creepage distance o f 14.5 mm des cript ion the p s 9 905 i s optically cou p l ed i s o l a t or c onta i n i ng a g a a l as l ed o n t h e i n p u t s i de a n d a p hot o d iod e, a sign a l p r ocessi n g c i r c u it a n d a p o w e r out put t r a n s i s t or o n t h e o u t p u t s i d e o n o n e chi p . fea t ure s ? l o n g cree page d i s t ance ( 1 4 . 5 mm m i n.) ? large pea k o u t put c u rre n t ( 2 . 5 a m a x ., 2 . 0 a m i n . ) ? h igh s p e e d s w itch i ng ( t plh , t phl = 0 . 1 5 s max.) ? uvlo (und er v o ltag e l o ck o u t ) p r o t ectio n with h y steresi s ? h i g h c o m m o n m ode t r ans i e n t i m m u n ity ( c m h , cm l = 2 5 kv/ s min.) ? 8 - p i n l s d i p ( lo n g c r e e page s d i p ) t y pe ? e m bossed t a p e p r odu c t: p s 9 9 0 5 - f 3 : 1 0 0 0 p cs / reel ? pb- fr ee p r oduct ? safety standards ? ul a p p r ove d : n o . e 7 2 422 ? csa app r ove d: n o . c a 1 0139 1 ( c a 5 a , can /csa- c22 . 2 6 006 5, 6 095 0) ? semko a p prov e d : n o . 1 1 229 9 4 ? d i n e n 6 074 7 - 5 - 5 ( v d e0884 - 5 ) : 2 0 11- 1 1 a p prove d : n o. 4 003 458 8 ( o p tio n ) applications ? igbt , p o wer m o s fet gat e d r iver ? industrial inverter ? s o lar inv erter r08 d s0 058e j01 00 rev.1.00 jun 1 1, 2012 pin connection (top view) 1. nc 2. anode 3. cathode 4. nc 5. v ee 6. nc 7. v o 8. v cc 1 2 3 4 8 7 6 5 shield a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 2 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 package dimensions (unit: mm) photocoupler construction ) . n i m ( t i n u r e t e m a r a p m m 5 . 4 1 e c n a t s i d r i a m m 5 . 4 1 e c n a t s i d e g a p e e r c r e t u o m m 4 . 0 e c n a t s i d n o i t a l o s i 16.70.4 0.80.25 0.20.15 0.250.15 3.50.2 3.70.25 1.27 0.50.1 0.25 m 8 1 5 4 6.7 0.3 13.8 0.3 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 3 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 functional diagram 8 7 5 2 3 led output h n o off tr. 1 on off tr. 2 off on l input h l (tr. 2) (tr. 1) shield marking example 9905 r n231 2 n 31 no. 1 pin mark year assembled (last 1 digit) rank code week assembled assembly lot type number company initial a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 4 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 ordering information part number order number solder p l a ting sp ecificatio n packing sty l e safet y standard a p p r o v a l a p plication part n um be r *1 ) t u c s c p 0 1 e p a t ( s c p 0 1 x a - y - 5 0 9 9 s p 5 0 9 9 s p ps990 5-f 3 ps990 5-y-f 3 - ax embosse d t ape 1 000 l e e r / s c p standar d prod ucts (ul, csa, semko appr oved) ps990 5-v ps990 5-y-v-a x 10 pcs ( t ape 10 pcs cut) ps990 5-v-f 3 ps990 5-y-v-f 3 -ax embosse d t ape 1 000 pb-free (ni/pd/au) pcs/reel d i n e n60 747- 5-5 (vd e0 8 84-5 ): 201 1-11 appr oved (opti on) ps990 5 note: *1. f o r the applicat i on of the safet y s ta n dar d , follo w i ng p a r t number sho u l d be use d . absolute maximum ratings (t a = 25 c, unless otherw ise specified) para mete r symbol ratings unit i t n e r r u c d r a w r o f e d o i d f 25 ma peak t ransient f o r w a r d current (pu l se w i dth < 1 s) i f ( t r a n ) 1 .0 a reverse v o lta ge v r 5 v p o w e r diss i pat ion *1, * 6 p d 45 m w det e c t or high l e v e l pea k o u t p u t c u r r ent *2 i o h ( peak) 2 .5 a l o w l e v e l peak o u t p u t c u r r ent *2 i o l ( p e ak) 2 .5 a supply v o l ta ge (v c c - v e e ) 0 to 35 v v e g a t l o v t u p t u o o 0 to v c c v p o w e r diss i pat ion *3, * 6 p c 250 m w isolatio n volta g e * 4 . s . m . r v 0 0 5 7 v b o per a t i n g f re q uenc y * 5 z h k 0 5 f operati n g amb i ent t e mperatu re t a ? 40 to + 110 c t e r u t a r e p m e t e g a r o t s s t g ? 55 to + 125 c notes: *1. derating to be set after 0.8 mw/ c a t t a = 8 5 c or more. *2. maximum p u l s e w i dth = 10 s, max i mum duty c y cle = 0.2 % *3. reduc ed to 5 .2 m w / c a t t a = 8 5 c or more *4. ac volta g e for 1 minute a t t a = 2 5 c, rh = 60% bet w e en i n put and o u tput. pins 1-4 sh orte d together, 5- 8 shorted tog e th er. *5. i o h ( peak) 2.0 a ( 0.3 s), i o l ( pea k ) 2.0 a ( 0.3 s) *6. mounte d on g l ass epo xy s ubstrate o f 75 mm 115 mm t1.5 mm recommended operating conditions para mete r symbol min . t yp. m a x. unit v ( e g a t l o v y l p p u s c c - v e e ) 15 30 v f o r w ard c u rren t (on ) i f ( on ) 10 12 14 ma f o r w a rd volt a g e (off) v f (off) ? 2 0.8 v operati n g amb i ent t e mperatu re t a ? 40 110 c a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 5 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 electrical charact e r ist i cs ( v ee = gn d, unless otherw ise specified a nd refer to recommended operati n g conditions) pa rame ter sy mbol conditi ons min. typ. *1 m a x. u n i t diod e f o r w a rd volt a g e v f i f = 10 ma, t a = 2 5 c 1.3 1.56 1.8 v reverse current i r v r = 3 v , t a = 2 5 c 10 a t e rminal capa citance c t f = 1 mhz, v f = 0 v , t a = 2 5 c 30 p f d e t e ct o r h igh level o u t put c u rren t i o h v o = ( v c c ? 4 v) * 2 0.5 2.0 a v o = ( v c c ? 15 v ) * 3 2.0 l o w lev el o u t p ut c u r r e n t i o l v o = ( v e e + 2.5 v ) * 2 0.5 2.0 a v o = ( v e e + 15 v ) * 3 2.0 high l e v e l output voltag e v o h i o = ? 100 m a * 4 v c c ? 3 . 0 v c c ? 1 . 5 v l o w l e vel out put voltag e v o l i o v 5 . 0 1 . 0 a m 0 0 1 = h i g h lev e l s upp l y c u rre n t i cch v o = open, i f = 12 ma 1.4 3.0 ma l o w l e v e l supp l y c u rren t i ccl v o = open, v f = ? 2 to + 0 .8 v 1.3 3.0 ma u v l o t h reshold v u v l o + v o > 5 v , i f = 12 ma 10.8 12.3 13.4 v v u v l o ? 5 . 2 1 0 . 1 1 5 . 9 u v lo h y s t e r e s is u vl o hys v o > 5 v , i f = 12 ma 0.4 1.3 v coup l e d t h reshold inpu t current (l h) i flh i o = 0 ma, v o > 5 v 2.9 6.0 ma t h reshold inpu t voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v notes: *1. t y pical values at t a = 2 5 c *2. maximum p u lse w i dth = 5 0 s, maximum dut y c y c l e = 0.5%. *3. maximum p u lse w i dth = 1 0 s, maximum dut y c y c l e = 0.2%. *4. v o h is mea sured w i t h the dc loa d current in this testing (maximum p u l s e w i d th = 2 ms, maxim u m dut y c y cle = 20%). a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 6 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 switching characteri s tics ( v ee = gnd, unless otherw ise specified and refer to recommended operati n g conditions) pa rame ter sy mbol conditi ons min. typ. *1 m a x. u n i t p ropa gat i o n d e l a y t ime (l h) t plh r g = 10 , c g = 10 n f *2 , f = 10 khz, 0 .09 0 .15 s p ropa gat i o n d e l a y t ime (h l) t p h l dut y c y c l e = 50%, i f = 12 ma 0 . 1 0 . 15 s pulse w i dth d i stortion (pw d ) | t p h l ? t plh 5 7 0 . 0 1 0 . 0 | s propa gatio n d e l a y t ime (difference b e tw e en a n y t w o products) t p h l ? t plh ? 0.1 0.1 s t e m i t e s i r r s n 0 5 t e m i t l l a f f s n 0 5 uvlo ( t urn on dela y) t uvlo on v o > 5 v , i f = 12 ma 0 . 8 s uvlo ( t urn off dela y) t uvlo off v o < 5 v , i f = 12 ma 0 . 6 s common m ode t ransient immunit y a t h i gh lev el ou tp u t | c m h | t a = 2 5 c, i f = 12 ma, v c c = 30 v, v o (mi n . ) = 26 v, v c m = 1.5 kv 25 kv/ s common m ode t ransient immunit y at low level output | c m l | t a = 2 5 c, i f = 0 ma, v c c = 30 v, v o (ma x . ) = 1 v , v c m = 1.5 kv 25 kv/ s notes: *1. t y pic a l val ues a t t a = 2 5 c *2. t h is load cond i t ion is e q uiva l e nt to the igbt l oad at 1 2 00 v / 75 a. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 7 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 test circuit fig. 1 i oh i 2 . g i f t i u c r i c t s e t ol test circuit fig. 3 v oh v 4 . g i f t i u c r i c t s e t ol test circuit fig. 5 i flh t i u c r i c t s e t o l v u 6 . g i f t i u c r i c t s e t v c c = 15 to 30 v 2.5 v 0.1 f 1 2 3 4 8 7 6 5 i o l i f 0 .1 f 1 2 3 4 8 7 6 5 v o > 5 v i f = 1 2 m a v c c 0.1 f 1 2 3 4 8 7 6 5 v o > 5 v i f = 10 to 14 m a v c c = 1 5 to 30 v 0 .1 f 1 2 3 4 8 7 6 5 v o h 1 0 0 m a 0 .1 f i f = 1 0 to 1 4 m a 1 2 3 4 8 7 6 5 i o h 1 2 3 4 8 7 6 5 v c c = 15 to 30 v 0.1 f v o l 1 0 0 ma shield shield shield shield shield shield ( v c c - 4 ) v v c c = 1 5 to 30 v v c c = 1 5 to 30 v a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 8 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 v c c = 1 5 to 30 v i f = 12 m a 10 k h z 50% dut y cycle 0 .1 f 1 2 3 4 8 7 6 5 v o 500 10 10 n f t phl t plh i f v out 90% 50% 10% t r t f v c c = 3 0 v v c m = 1 . 5 k v 0 .1 f 1 a b 2 3 4 8 7 6 5 v o i f v oh 26 v 1 v v ol v cm 0 v v o (switch a: i f = 12 ma) v o (switch b: i f = 0 ma) fig. 7 t plh , t phl , t r , t f test circuit and wave forms fig. 8 cmr test circuit and wave forms t = v t v cm t shield shield + ? a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 9 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 typical charac t e ristics (t a = 25 c, unless otherw ise specified) ambient t emper ature t a (c) diode p o w er dissipation p d (mw) diode power dissipation vs. ambient temperature ambient t emper ature t a (c) detector p o w er dissipation p c (mw) detector power dissipation vs. ambient temperature ambient t emper ature t a (c) threshold input current i flh (ma) threshold input current vs. ambient temperature 20 40 60 80 120 100 0 60 50 40 30 20 10 20 40 60 80 120 100 0 300 250 200 150 100 50 6.0 5.0 4.0 3.0 2.0 1.0 0 ? 40 ? 20 0 20 40 60 80 100 f orw ard current i f (ma) output v oltage v o (v) output voltage vs. forward current 1 0 2 4 6 3 5 35 30 25 20 15 10 5 f orw ard v oltage v f (v) f orw ard current i f (ma) forward current vs. forward voltage 1 0.01 0.1 1 10 100 1.5 2 t a = +110c +100c +85c +50c +25c ? 20c ? 40c high le v el output v oltage ? supply v oltage v oh ? v cc (v) high le v el output current i oh (a) high level output voltage ? supply voltage vs. high level output current 0 0.5 1.0 1.5 2.5 2.0 0 ? 8 ? 6 ? 4 ? 2 ? 40c +25c v cc = 30 v, v ee = gnd, v o > 5 v t a = 25c , v cc = 30 v, v ee = gnd v cc = 30 v, v ee = gnd, i f = 12 ma t a = +110c 2.4 rema rk t he g raphs i ndic a te nomin a l c h arac terist ics. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 0 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 f orw ard current i f (ma) propagation delay time, pulse width distortion vs. forward current propagation delay time, pulse width distortion vs. supply voltage supply v oltage v cc (v) lo w le v el output current i ol (a) lo w le v el output v oltage v ol (v) low level output voltage vs. low level output current propagation dela y time t phl , t plh (ns), pulse width distor tion (pwd) t phl ? t plh (ns) propagation dela y time t phl , t plh (ns), pulse width distor tion (pwd) t phl ? t plh (ns) propagation dela y time t phl , t plh (ns), pulse width distor tion (pwd) t phl ? t plh (ns) 6 8 10 12 14 16 18 150 100 50 0 15 20 25 30 150 100 50 0 propagation delay time, pulse width distortion vs. load capacitance load capacitance c g (nf) 10 20 30 40 50 150 100 50 0 0 0.5 1.0 1.5 2.5 2.0 8 6 4 2 propagation delay time, pulse width distortion vs. load resistance 0 10 20 30 40 50 150 100 50 0 load resistance r g () propagation dela y time t phl , t plh (ns), pulse width distor tion (pwd) t phl ? t plh (ns) propagation dela y time t phl , t plh (ns), pulse width distor tion (pwd) t phl ? t plh (ns) propagation delay time, pulse width distortion vs. ambient temperature ambient t emper ature t a (c) 0 ? 40 ? 20 20 40 60 80 150 100 50 0 100 ? 40c +25c v cc = 30 v, v ee = gnd, i f = 0 ma t a = +110c t a = 25c, i f = 12 ma, v cc = 30 v, c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl i f = 12 ma, v cc = 30 v, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25c, i f = 12 ma, v cc = 30 v, r g = 10 , f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25c, i f = 12 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl t a = 25c, v cc = 30 v, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% pwd t plh t phl rema rk t he g raphs i ndic a te nomin a l c h arac teristic s. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 1 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 ambient t emper ature t a (c) supply current vs. ambient temperature high le v el supply current i cch (ma), lo w le v el supply current i ccl (ma) ? 20 0 20 40 80 60 ? 40 2.0 1.5 1.0 0.5 100 ambient t emper ature t a (c) supply v oltage v cc (v) supply current vs. supply voltage high le v el supply current i cch (ma), lo w le v el supply current i ccl (ma) 0 3 0 2 5 1 25 2.0 0.5 1.0 1.5 high le v el output v oltage ? supply v oltage v oh ? v cc (v) high level output voltage ? supply voltage vs. ambient temperature ? 20 0 20 40 80 60 ? 40 0.0 ? 3.0 ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 100 ? 20 0 20 40 80 60 ? 0 0 1 0 4 ambient t emper ature t a (c) high le v el output current i oh (a) high level output current vs. ambient temperature ambient t emper ature t a (c) lo w le v el output v oltage v ol (v) low level output voltage vs. ambient temperature 0.30 0.00 0.05 0.10 0.15 0.20 0.25 ambient t emper ature t a (c) lo w le v el output current i ol (a) low level output current vs. ambient temperature ? 20 0 20 40 80 60 ? 0 0 1 0 4 3.0 0.0 0.5 1.0 1.5 2.0 2.5 ? 20 0 20 40 80 60 ? 0 0 1 0 4 3.0 0.0 0.5 1.0 1.5 2.0 2.5 v cc = 30 v, v ee = gnd, i f = 12 ma, i o = ?100 ma v cc = 30 v, v ee = gnd, i f = 12 ma, v cc ?v o = 4 v v cc = 30 v, v ee = gnd, i f = 0 ma, v o = 2.5 v v cc = 30 v, v ee = gnd, i f = 0 ma, i o = 100 ma v cc = 30 v, v ee = gnd, v o = open i ccl (i f = 0 ma) i cch (i f = 12 ma) t a = 25c , v ee = gnd, v o = open i cch (i f = 12 ma) i ccl (i f = 0 ma) rema rk t he g raphs i ndic a te nomin a l c h arac teristic s. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 2 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 output voltage vs. supply voltage supply v oltage v cc ? v ee (v) output v oltage v o (v) 0 5 10 15 20 14 12 10 8 6 4 2 0 t a = 25c , i f = 12 ma v uvlo+ (12.3 v) uvlo hys v uvlo+ (12.3 v) v uvlo? (11.0 v) rema rk t he g raphs i ndic a te nomin a l c h arac terist ics. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 3 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 taping specifications (unit: mm ) tape direction outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 25.51.0 29.51.0 ps9905-f3 2.00.1 4.00.1 1.750.1 24.00.3 1.5 +0.1 ?0 4.5 max. (17.2) (0.3) 11.50.1 outline and dimensions (tape) (7.2) (4.05) 12.00.1 2.00.2 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 4 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 recommended mount pad dimensions (unit: mm) 2 0.9 1.27 16.6 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 5 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 notes on handli n g 1. recomme nded solderi ng condition s (1) i n frared ref l o w sold erin g 0 6 2 e r u t a r e p m e t w o l f e r k a e p ? c or b e low (packag e s urfa c e tem pera t ure) ? time of peak ref l ow temperature 10 seconds or less ? time o f tempe r ature h i gher than 220 c 60 seconds or less ? time to preh eat temperatu r e fro m 120 to 180 c 120 30 s e e r h t s w o l f e r f o r e b m u n ? t n u o m a l l a m s g n i n i a t n o c x u l f n i s o r x u l f ? of chlor i ne ( t he f l ux with a m a x i mum c hl or i n e c on tent o f 0.2 wt% is r ecommended.) 12030 s (preheating) 220c 180c package surface temperature t ( c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260c max. 120c (2) wav e soldering ? temperatu r e 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating co nditions 120 c or b e low (packag e s urfa c e tem pera t ure) ? num ber of tim e s one (allowed t o be d i pped i n solder i n cluding p l a s tic m old por tio n.) ? flux rosin flux containing small amount of chlor i ne ( t he f l ux with a maximum chlorine con t ent of 0.2 wt% is recommended.) ( 3) soldering b y soldering i r on ? p eak t e m pe r atu re ( l ead p a r t t e m pe r atu r e ) 350c or below ? time (eac h pins) 3 seconds or less f o t n u o m a l l a m s g n i n i a t n o c x u l f n i s o r x u l f ? chlor i ne ( t he f l ux with a maximum chlori n e con t e n t o f 0.2 wt% i s r e commended.) (a) soldering of leads should b e made at th e poin t 1.5 to 2.0 mm from the root of the lead a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 6 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 (4 ) ca ution s ? f l uxes avoid removin g the residu al f l ux with fr eon-based and chlor i ne-b ased cleaning so lvent. 2. caution s r egarding noi se be aware th at w hen vo lta g e is applie d s uddenly betwee n th e pho tocoupler ?s inpu t and ou tput at s t artup , the outpu t transistor may e n ter t h e o n s tat e , e v e n i f t h e vol t a g e i s with i n the absolut e m a xim um ratings. u sa ge cau tio n s 1. this product is weak for stat ic electricit y b y d e signed with hig h-speed in tegr ated circuit so pro t ect ag ainst static electri cit y when handling. 2. board design ing (1) b y -pass capacito r of more th an 0.1 f is used between v c c an d gnd n ear d ev ice. a lso, ensu re that the di s tance betw een t h e lead s o f t h e photocoupler a n d cap acitor is n o more than 10 m m . (2) when design ing th e prin ted wiring bo ard, ensu re th at the pa t t e r n of t h e i gb t c ollec t ors/em itt e r s i s not too close to the input blo c k p a ttern of th e pho tocoupler. if the patter n is too close to the input blo c k and coupling o ccurs, a sudden fluctua tion in th e voltag e on the igbt o utput side might affect the photocoup ler?s led inpu t, leading to malfun ction or degr adation of ch aracteristics. (if the patter n needs to b e close to the input blo c k , to prev ent the led from ligh t ing during the off state due to th e abovementio n e d coupling, desig n the input-s i d e circuit so that t h e b i as of the led is rev e rsed, within th e r a nge of the recomme nded o perating cond itio n s, and be su r e t o thoroughl y evaluate oper a tion . ) (3) pin 1, 4 (which is an nc *1 pin) can either be connected directly to th e gnd pin on th e led side or left open . also, pin 6 (which is an nc *1 pin) can eithe r be connected d i rectly to the gnd pin on th e d e tector side or left op en . unconnected pins should not be used as a b y pas s for signals or for an y othe r sim ilar purpose b e cause this may degrade th e internal no ise en vironment of the device. note : *1. nc: non-c o n necti o n (no c o nnecti on) 3. make sure the rise/fall time of th e forward curr en t is 0 . 5 s or l e s s . 4. in order to avoid malfunctions, m a ke sure th e r i se/fall slope of th e supply vo ltag e is 3 v/ s or le ss. 5. avoid storage at a h i gh temperature and high hu midit y . a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 7 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 spe cification of vde marks lice nse document t i n u . c e p s l o b m y s r e t e m a r a p climatic test cl ass (iec 6006 8- 1 2 / 0 1 1 / 0 4 ) 1 - 8 6 0 0 6 n e n i d / 1 dielectric strength maximum o p e r ating i s olati on voltag e t e st voltage ( p artial disc har g e test, procedur e a for t y pe tes t and rand om test) u p r = 1.6 u io rm . , p d < 5 pc u iorm u p r 1 600 2 560 v peak v peak t e st voltage ( p artial disc har g e test, procedur e b for all dev i c es) u p r = 1.875 u iorm . , p d < 5 p c u p r 3 000 v peak u e g a t l o v r e v o e l b i s s i m r e p t s e h g i h t r 12 0 0 0 v peak 2 ) 1 t r a p 0 1 1 0 e d v 1 - 4 6 6 0 6 n e n i d ( n o i t u l l o p f o e e r g e d compar ative tracking i n dex (iec 601 12/di n en 601 12 (vd e 0303 part 11)) c t i 175 material group (din en 60664 a i i i ) 1 t r a p 0 1 1 0 e d v 1 - t e g n a r e r u t a r e p m e t e g a r o t s s t g ?55 to + 125 c t e g n a r e r u t a r e p m e t g n i t a r e p o a ?40 to + 110 c isolatio n resist ance, min i mum value v i o = 500 v dc at t a = 25c v i o = 500 v dc at t a max. at l east 100 c ris min. ris min. 1 0 1 2 1 0 1 1 safet y maximum ratings (maximum permiss i b le in c a se of fault, see therm a l derati ng curve) packag e temp erature current (in put current i f , psi = 0) po w e r (o utput or total po w e r dissip a tio n ) isolatio n resist ance v i o = 500 v dc at t a = t si t si isi psi ris min. 175 400 700 1 0 9 c ma mw a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9905 ch ap t 8 1 f o 8 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 8 0 r jun 11, 2 0 1 2 caution gaas p r o d ucts t his product use s gallium arsenid e (g aas). gaas vapor and po w der a r e haza r dous to human health if inhaled or ingest ed, so please observe the follow i ng poi nts. ? f ollow r elat e d law s an d or dinan c es w hen dis pos i ng of the pr oduct . if there a r e no a pplicable law s and/ or o r dinances, dispose of the product as reco mmended belo w . 1. commission a disposal compa n y able to ( w ith a license to) colle ct, transport a nd d i spose of mat erials t hat cont ain ars enic and ot her such industrial w aste mat er i als. 2. exclude the pr oduct from gene r al industrial w aste and household garbage, a nd en sure that the product is controlled (as industrial w aste subjec t to special control) up until final dispo s al. ? do not burn, de stro y , c ut, c rush, or c hemically dissolve t he product. ? do not lick the product or in an y w a y allo w it to e nter the mou th. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9905 data sheet description rev. date page summary 0.01 apr 06, 2012 ? first edition issued 1.00 jun 11, 2012 throughout preliminary data sheet data sheet p.1 modification of features p.4 modification of ordering information p.5 modification of absolute maximum ratings p.6 modification of sw itching characteristics pp.7, 8 modifica tion of test circuit pp.9 to 12 addition of typical characteristics p.17 addition of specification of vde marks license document

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