SSF7504 feathers: id=220a bv=75v rdson=2.7m ? (typ.) ? advanced trench process technology ? special designed for convertors and power controls ? high density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? avalanche energy 100% test ? silikron semiconductor co.,ltd. 2010.5.2 version : 1.0 page 1of5 absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 220 i d @t c =100 ? c continuous drain current,vgs@10v 170 i dm pulsed drain current 880 a p d @t c =25 ? c power dissipation 370 w linear derating factor 2.0 w/ ? c v gs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 20 v/ns e as single pulse avalanche energy 960 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to +175 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 0.41 ? r ja junction-to-ambient ? ? 62 ? c/w electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 75 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 2.7 4 m ? v gs =10v,i d =40a v gs(th) gate threshold voltage 2.0 3.1 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance ? 65 ? s v ds =5v,i d =30a ? ? 10 v ds =80v,v gs =0v i dss drain-to-source leakage current ? ? 50 a v ds =80v, v gs =0v,t j =150 ? c description: the SSF7504 is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology increases the cell density and reduces the on-resistance; it s typical rdson can reduce to 2.7mohm. application: ? power switching application SSF7504 top view (to220)
SSF7504 gate-to-source forward leakage ? ? 100 v gs =20v i gss gate-to-source reverse leakage ? ? -100 na v gs =-20v qg total gate charge ? 140 ? qgs gate-to-source charge ? 30 ? qgd gate-to-drain("miller") charge ? 36 ? nc i d =30a v dd =30v v gs =10v td(on) turn-on delay time ? 22 ? tr rise time ? 35 ? td(off) turn-off delay time ? 77.8 ? tf fall time ? 19.8 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v ciss input capacitance ? 7005 ? coss output capacitance ? 600 ? crss reverse transfer capacitance ? 280 ? pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 220 i sm pulsed source current . (body diode) ? ? 880 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =40a,v gs =0v t rr reverse recovery time 80 ? ns q rr reverse recovery charge 270 ? nc t j =25 ? c,i f =75a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 80a, vdd = 37.5v pulse width 300 s; duty cycle 1.5% rg = 25 ??? starting tj = 25c gate charge test circuit: eas test circuits: bv dss ? silikron semiconductor co.,ltd. 2010.5.2 version : 1.0 page 2of5
SSF7504 ? silikron semiconductor co.,ltd. 2010.5.2 version : 1.0 page 3of5 switch time test circuit switch waveforms: figure1:transfer characteristic figure2:capacitance figure3:on resistance vs junction temperature figure4:breakdown voltage vs junction temperature
SSF7504 ? silikron semiconductor co.,ltd. 2010.5.2 version : 1.0 page 4of5 figure5:gate charge figure6:source-drain diode forward voltage figure7:safe operation area figure8:max drain current vs junction temperature figure9:transient thermal impedance curve ?
SSF7504 to220 mechanical data: ? silikron semiconductor co.,ltd. 2010.5.2 version : 1.0 page 5of5
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