1. product profile 1.1 general description 100 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2500 mhz to 2700 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf per carrier; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? designed for broadband operation (2500 mhz to 2700 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier applications in the 2500 mhz to 2700 mhz frequency range blf8g27ls-100 power ldmos transistor rev. 2 ? 5 march 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2500 to 2700 900 28 25 17 28 ? 32 [1]
blf8g27ls-100 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 2 ? 5 march 2014 2 of 12 nxp semiconductors blf8g27ls-100 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] v \ p table 3. ordering information type number package name description version blf8g27ls-100 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 100 w 0.292 k/w
blf8g27ls-100 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 2 ? 5 march 2014 3 of 12 nxp semiconductors blf8g27ls-100 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g27ls-100 is capable of withstand ing a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =900ma; p l = 100 w (cw); f = 2500 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 153 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -29-a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d =153ma - 1.27 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.35a -0.1- ? table 7. rf characteristics test signal: 2-carrier w-cdma; 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on the ccdf; f 1 = 2502.5 mhz; f 2 = 2507.5 mhz; f 3 = 2692.5 mhz; f 4 = 2697.5 mhz; rf performance at v ds =28v; i dq = 900 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =25w 15.8 17 - db ? d drain efficiency p l(av) =25w 23 28 - % rl in input return loss p l(av) =25w - ? 12 ? 8db acpr 5m adjacent channel power ratio (5 mhz) p l(av) =25w - ? 32 ? 27 dbc table 8. typical impedance measured load-pull data; v ds =28v; i dq = 900 ma. f z s [1] z l [1] (mhz) (? ) (? ) 2500 1.2 ? j4.6 2.7 ? j2.7 2600 2.3 ? j5.5 2.5 ? j2.5 2700 3.8 ? j5.2 2.1 ? j2.6
blf8g27ls-100 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 2 ? 5 march 2014 4 of 12 nxp semiconductors blf8g27ls-100 power ldmos transistor 7.3 test circuit information fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h see table 9 for list of components. fig 2. component layout for test circuit table 9. list of components see figure 2 for component layout. the used pcb (printed-circuit board) material is rogers ro4350b with a thickness of 0.762 mm. component description value remarks c1, c2, c3, c6, c7, c10, c11, c12 multilayer ceramic chip capacitor 22 pf atc600f c4, c5, c8, c9, c13, c14, c15, c16 multilayer ceramic chip capacitor 4.7 ? f, 50 v murata c17, c18 electrolytic capacitor 2200 ? f; 50 v r1 chip resistor 9.1 ? smd 0603 x1 copper foil strip - d d d p p p p p p & |