dmn 62d0lfb document number: ds35 409 rev. 5 - 2 1 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25c 6 0v 2 ? @ v gs = 4 v 1 00 m a 2.5 ? @ v gs = 2 .5v 50 m a description and applications this new generation mosfet is designed to minimize the on - state resistan ce (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? ? ? ? features and benefits ? ? ? ? ? esd protected ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? ? ? ? ? ? ordering information (note 4 ) product marking reel size (inches) tape width (mm) quantity per reel dmn 62d0lfb - 7 nk 7 8 3,000 dmn 62d0lfb - 7 b nk 7 8 10,000 notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. 2 . see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "g reen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging detai ls, go to our website at http://www.diodes.com /product s /packages.html . x1 - dfn1006 - 3 bottom view t op view pin - out equivalent circuit source gate protection diode gate drain esd protected d s g e4
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 2 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product marking information dmn 62d0lfb - 7 dmn 62d0lfb - 7 b maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss 2 0 v continuous drain current (note 5 ) v gs = 4.0 v steady state t a = + 25c t a = + 70 c i d 100 75 m a pulsed drain curr ent (note 6 ) i dm 200 m a thermal characteristics characteristic symbol max unit power dissipation (note 5 ) p d 0. 47 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 258 c/w operating and storage temperature range t j , t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout, single sided . 6 . repetitive rating, pulse width limited by junction temperature. nk = part marking code nk nk nk top view bar denotes gate and source side nk nk nk nk top view bar denotes gate and source side nk from date code 1527 (yyww), this changes to : nk top view dot denotes drain side nk nk nk
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 3 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product electrical c haracteristics ( @ t a = + 25c , unless otherwise stated .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 6 0 - - v v gs = 0v, i d = 250a zero gate voltage drain cur rent t j = + 25c i dss - - 1.0 a v ds = 6 0 v, v gs = 0v gate - source leakage i gss - - 1 00 n a v gs = 5 v, v ds = 0v - - 500 na v gs = 10v, v ds = 0v - - 2.0 a v gs = 15v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0. 6 - 1 . 0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 1.3 2 ? v gs = 4 v, i d = 1 00m a - 1.5 2.5 v gs = 2 .5 v, i d = 50m a - 1.9 3 v gs = 1.8 v, i d = 50m a - 2.6 - v gs = 1 .5 v, i d = 10m a forward transfer admittance |y fs | - 0.8 - s v ds = 10 v, i d = 20 0m a diode forward voltage v sd - 0.9 1. 3 v v gs = 0v, i s = 1 15m a dynamic characteristics (note 8 ) input capacitance c iss - 32 64 pf v ds = 2 5 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 4.4 9 reverse transfer capacitance c rss - 2.9 6 gate resistance r g - 126 250 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g - 0.45 0.9 nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs - 0.08 0.2 gate - drain charge q gd - 0.08 0.2 turn - on delay time t d( on ) - 3. 4 10 ns v gs = 10 v, v ds = 30 v, r l = 150 , r g = 25 , i d = 200ma turn - on rise time t r - 3. 4 10 ns turn - off delay time t d( off ) - 2 6 . 4 4 5 ns turn - off fall time t f - 1 6 . 3 30 ns notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) ds fig. 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d i (a) @ v =4.0v d gs i (a) @ v =4.5v d gs i (a) @ v =2.5v d gs i (a) @ v =3.0v d gs i (a) @ v =1.5v d gs i (a) @ v =2.0v d gs i (a) @ v =1.8v d gs 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i , d r a i n c u r r e n t ( a ) d
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 4 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product 0 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 i , drain source current d fig. 3 typical on-resistance vs. drain current and gate voltage r ( ) ave @ v =2.5v ds(on) g ? r ( ) ave @ v =4.5v ds(on) g ? r ( ) ave @ v =1.8v ds(on) g ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.1 0.2 0.3 0.4 i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.1 1 10 v = 5.0v gs ave r ( ) @ 150 c ds(on) ?? ave r ( ) @ -55 c ds(on) ?? ave r ( ) @ 25 c ds(on) ?? ave r ( ) @ 85 c ds(on) ?? ave r ( ) @ 125 c ds(on) ?? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) t h 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 v , source-drain voltage (v) sd fig. 7 diodes forward voltage vs. current i ( a ) s 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 v , drain-source voltage (v) ds fig. 8 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 5 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 q (nc) g fig. 9 gate charge characteristics v ( v ) g s v =10v, i =250ma ds d 0.001 0.01 0.1 1 0.1 1 10 100 v , drain-source voltage (v) ds fig. 10 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 11 transient thermal resistance 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r(t) @ d=0.005 r(t) @ d=single pulse r(t) @ d=0.01 r(t) @ d=0.02 r(t) @ d=0.05 r(t) @ d=0.1 r(t) @ d=0.3 r(t) @ d=0.5 r(t) @ d=0.7 r(t) @ d=0.9 r (t)=r(t) * r ?? ja ja r =273 c/w duty cycle, d=t1 / t2 ? ja ?
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 6 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad l ayout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.70 g1 0.3 0 g2 0.2 0 x 0. 40 x 1 1.10 y 0. 25 y1 0.7 0 x1 - dfn1006 - 3 dim min max typ a 0.47 0.53 0.50 a1 0 .00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e - - 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 - - 0.40 z 0.02 0.08 0.05 all dimensions in mm l3 l1 l2 e b d e a z b2 a1 seating plane pin #1 id c y1 x1 x g2 y g1
dmn 62d0lfb document number: ds35 409 rev. 5 - 2 7 of 7 www.diodes .com may 2015 ? diodes incorporated dmn 62d0lfb advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regard s to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all r isks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes in corporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in res pect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into m ultiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components i n life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, o r 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any c omponent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorpor ated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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