RU5H5P n-channel advanced power mosfet symbol rating unit v dss 500 v gss 30 t j 150 c t stg -55 to 150 c i s t c =25c 5 a i dp t c =25c 20 a t c =25c 5 t c =100c 3.5 t c =25c 25 t c =100c 10 r jc 5 c/w r ja 62.5 c/w e as 180 mj ruichips semiconductor co., ltd rev. b? mar., 2013 1 www.ruichips.com pin description features applications absolute maximum ratings to220f n-channel mosfet parameter common ratings (t c =25c unless otherwise noted) ? 500v/5a, r ds (on) =1200m(typ.)@v gs =10v ? super high dense cell design ? fast switching ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? high efficiency switch mode power supplies ? lighting drain-source voltage v gate-source voltage maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient g d s d s g
RU5H5P min. typ. max. bv dss drain-source breakdown voltage 500 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 1200 1500 m v sd diode forward voltage 1.2 v t rr reverse recovery time 250 ns q rr reverse recovery charge 2.4 c r g gate resistance 4.7 c iss input capacitance 560 c oss output capacitance 95 c rss reverse transfer capacitance 18 t d(on) turn-on delay time 20 t r turn-on rise time 35 t d(off) turn-off delay time 45 t f turn-off fall time 25 q g total gate charge 15 q gs gate-source charge 3 q gd gate-drain charge 6 notes: ruichips semiconductor co., ltd rev. b? mar., 2013 2 www.ruichips.com electrical characteristics (t c =25c unless otherwise noted) v dd =250v, r l =55, i ds =4.5a, v gen =10v, r g =25 v ds =400v, v gs =10v, i ds =4.5a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. limited by t jmax , i as =6a, v dd = 100v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =4.5a, v gs =0v i sd =4.5a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =250v, frequency=1.0mhz pf dynamic characteristics v gs =30v, v ds =0v v gs =10v, i ds =2.25a diode characteristics v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU5H5P unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =500v, v gs =0v a
RU5H5P device marking package packaging quantity reel size tape width RU5H5P RU5H5P to220f tube 50 - - ruichips semiconductor co., ltd rev. b? mar., 2013 3 www.ruichips.com ordering and marking information
RU5H5P ruichips semiconductor co., ltd rev. b? mar., 2013 4 www.ruichips.com typical characteristics 0 1 2 3 4 5 6 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 1000 2000 3000 4000 5000 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=2.25a 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 0.1 1 10 100 1000 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.01 0.1 1 10 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 5 c/w
RU5H5P ruichips semiconductor co., ltd rev. b? mar., 2013 5 www.ruichips.com typical characteristics 0 2 4 6 8 10 0 2 4 6 8 10 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 5v 6v 8v 10v 0 500 1000 1500 2000 2500 0 2 4 6 8 10 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =2.25a t j =25 c rds(on)=1200m 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 200 400 600 800 1000 1 10 100 1000 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=400v ids=4.5a
RU5H5P ruichips semiconductor co., ltd rev. b? mar., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU5H5P ruichips semiconductor co., ltd rev. b? mar., 2013 7 www.ruichips.com package information to220f f2 f3 f1 g2 e1 k1 c a4 1 a2 dep 2 d1 a a1 l l1 e b2 g3 b1 f4 f1 e q d dep dep c1 h1 p1 p3 p1 p2 p p1 min nom max min nom max min nom max min nom max e 9.96 10.16 10.36 0.392 0.400 0.408 p2 1.15 1.20 1.25 0.045 0.047 0.049 a 4.50 4.70 4.90 0.177 0.185 0.193 p3 3.450 0.136 a1 2.34 2.54 2.74 0.092 0.100 0.108 1 5 7 9 5 7 9 a2 0.95 1.05 1.15 0.037 0.041 0.045 2 45 45 a4 2.65 2.75 2.85 0.104 0.108 0.112 dep 0.05 0.10 0.15 0.002 0.004 0.006 c 0.50 0.020 f1 1.90 2.00 2.10 0.075 0.079 0.083 c1 0.50 0.020 f2 13.61 13.81 14.01 0.536 0.544 0.552 d 15.67 15.87 16.07 0.617 0.625 0.633 f3 3.20 3.30 3.40 0.126 0.130 0.134 q 8.80 9.00 9.20 0.346 0.354 0.362 f4 5.25 5.40 5.55 0.207 0.213 0.219 h1 6.48 6.68 6.88 0.255 0.263 0.271 g2 6.90 7.00 7.10 0.272 0.276 0.280 e 2.54bsc 0.100bsc g3 1.10 1.30 1.50 0.043 0.051 0.059 p 3.183 0.125 b1 1.17 1.21 1.24 0.046 0.047 0.049 l 12.78 12.98 13.18 0.503 0.511 0.519 b2 0.77 0.80 0.85 0.030 0.032 0.033 l1 3.25 3.45 3.65 0.128 0.136 0.144 e1 9.80 10.00 10.20 0.386 0.394 0.402 d1 8.99 9.19 9.39 0.354 0.362 0.370 k1 0.65 0.70 0.75 0.026 0.028 0.030 p1 1.40 1.50 1.60 0.055 0.059 0.063 inch symbol mm inch symbol mm
RU5H5P ruichips semiconductor co., ltd rev. b? mar., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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