dcr 2180h 85 phase control thyristor ds6065 - 1 april 201 1 (ln28305 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v d s m and v r s m v conditions dcr 218 0h 8 5 dcr2180h80 DCR2180H75 dcr2180h70 8 5 00 80 00 75 00 70 00 t vj = - 40c to 9 0 c, i drm = i rrm = 7 00 ma, v drm , v rrm t p = 10ms, v d r m & v r r m = v d s m & v r s m - 5 00 v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr 2180 h 85 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 8 5 00 v i t(av) 218 0 a i tsm 40 0 00 a dv/dt* 2 000 v/s di/dt 1 0 0 a/s * higher dv/dt selections available fig. 1 package outline outline type code: h (see package details for further information)
semiconductor dcr 2180h 85 2 / 9 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 2180 a i t(rms) rms value - 3420 a i t continuous (direct) on - state current - 3080 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 90 c 40 .0 ka i 2 t i 2 t for fusing v r = 0 8.00 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0 0 4 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.0 0 08 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 90 c t stg storage temperature range - 40 140 c f m clamping force 110 1 30 kn
semiconductor dcr 2180h 85 3 / 9 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 90 c - 7 00 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 90 c, gate open 2 000 - v/s di/dt rate of rise of on - state current from 67% v drm to 4 000a repetitive 50hz - 2 0 0 a/s gate source 30v, 10 ? , non - repetitive - 1000 a/s t r < 0.5s, t j = 90 c v t on - state voltage i t = 15 00a, t case = 90 c 1. 90 v v t(to) threshold voltag e t case = 90 c - 1. 30 v r t on - state slope resistance t case = 90 c - 0. 40 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3.0 s t r = 0.5s, t j = 25c t q turn - off time t j = 90 c, v r = 100v, di/dt = 1.5 a/s, - 1 2 00 s dv dr /dt = 20v/s linear to 67% v drm q s stored charge i t = 25 00a, tp = 7 00us,t j = 90 c, di/dt = 1 .5 a/s, - 6500 c i l latching current t j = 25c, - 1 a i h holding current t j = 25c, - 200 ma gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 2.6 v v gd gate non - trigger voltage at 4 0% v drm, t case = 9 0 c tbd v i gt gate trigger current v drm = 5v, t case = 25c 4 00 ma i gd gate non - trigger current at 4 0% v drm, t case = 9 0 c tbd ma
semiconductor dcr 2180h 85 4 / 9 www.dynexsemi.com curves v tm equation v tm = a + bln (i t ) + c.i t +d. ? i t where a = 1.36609 b = - 0.0185025 c = 0.000380139 d = 0.00258473 t hese values are valid for t j = 9 0 c fig. 2 maximum &minimum on - state characteristics i i (s) r thi ( c/k w) 1 0.9692 2.695 2 0. 1332 0.814 3 0. 0177 0.33 4 0. 0042 0.162 fig. 3 maximum (limit) transient thermal im pedance C junction to case (c/ w) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 1 2 3 4 5 6 instantaneous on - state current, i t - (a) instantaneous on - state voltage,v t - (v) tj=90 c 0 0.001 0.002 0.003 0.004 0.005 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? n i t thi thjc i e r t r 1 1 ?
semiconductor dcr 2180h 85 5 / 9 www.dynexsemi.com fig. 4 on - state power dissipation C sine wave fig. 5 maximum permissible case temperature, double side cooled C sine wave fig. 6 maximum permissible case temperature, double side cooled C rectangular wave fig. 7 on - state power dissipation C rectangular wave 0 4000 8000 12000 16000 20000 0 400 800 1200 1600 2000 2400 mean power dissipation - (w) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 0 400 800 1200 1600 2000 2400 maximum case temperature, t case - ( c) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 0 400 800 1200 1600 2000 2400 maximum case temperature, tcase - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 4000 8000 12000 16000 20000 0 400 800 1200 1600 2000 2400 mean power dissipation - (w) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr 2180h 85 6 / 9 www.dynexsemi.com fig. 8 multi - cycle surge current fig. 9 single - cycle i 2 t fig . 10 gate characteristics 10.0 20.0 30.0 40.0 50.0 1 10 100 surge current, i tsm - (ka) number of cycles conditons: t case =90 c v r =0 pulse width = 10ms 0.00 2.00 4.00 6.00 8.00 10.00 1 10 i 2 t (ma 2 s) pulse width, t p - (ms) conditons: t case =90 c v r =0 half - sine wave 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 0 50 100 150 200 250 300 350 400 450 500 gate trigger voltage, v gt - (v) gate trigger current i gt , - (ma) tj=25 c tj=110 c upper limit tj= - 40 c lower limit
semiconductor dcr 2180h 85 7 / 9 www.dynexsemi.com a is recommended triggering area. b is unreliable triggering area. c is recommended gate load line. fig .1 1 gate characteristics 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 1.0 2.0 3.0 4.0 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) b c a p gm =20w
semiconductor dcr 2180h 85 8 / 9 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: h fig.1 2 package outline
semiconductor dcr 2180h 85 9 / 9 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific a pplication . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional pro duct information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guar antee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in appli cations where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is li kely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for pro duction. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless othe rwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, whi ch are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions @dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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