creat by art - glass passivated chip junction - high efficiency, low vf - high current capability - high reliability - high surge current capability - low power loss - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - green compound (halogen-free) base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 50 100 200 400 600 800 1000 v v rms 35 70 140 280 420 560 700 v v dc 50 100 200 400 600 800 1000 v i f(av) a trr 250 ns cj pf r ja o c/w t j o c t stg o c document number: ds_d1505007 version: g14 F1T1G thru f1t7g glass passivated fast recover y rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data taiwan semiconductor case: ts-1 ts-1 weight: 0.2g (approximately) maximum ratings and electrical characterstics (t a =25 unless otherwise noted) f1t 5g f1t 6g f1t 7g unit parameter symbol f1t 1g f1t 2g f1t 3g f1t 4g a a 5 150 30 maximum repetitive peak reverse voltage maximum rms voltage note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. note 1: pulse test with pw=300 s, 1% duty cycle note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a maximum instantaneous forward voltage (note 1) @ 1 a v f 15 v maximum reverse current @ rated vr t j =25 t j =125 i r 1.3 150 500 maximum reverse recovery time (note 2) maximum dc blocking voltage maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm storage temperature range - 55 to +150 - 55 to +150 typical junction capacitance (note 3) typical thermal resistance 90 operating junction temperature range
creat by art part no. part no. F1T1G F1T1G F1T1G (ta=25 unless otherwise noted) document number: ds_d1505007 version: g14 example ordering information taiwan semiconductor F1T1G thru f1t7g green compound h a0 aec-q101 qualified F1T1Gha0 aec-q101 qualified packing code green compound code description a0 3,000 / ammo box (26mm taping) r0 ts-1 5,000 / 13" paper reel b0 ts-1 1,000 / bulk packing ts-1 packing code green compound code package packing prefix "h" a0 suffix "g" ts-1 3,000 / ammo box (52mm taping) a1 aec-q101 qualified preferred p/n f1txg (note 1) ratings and characteristics curves F1T1G a0 F1T1G a0g a0 g note 1: "x" defines voltage from 50v (F1T1G) to 1000v (f1t7g) 0 0.25 0.5 0.75 1 1.25 1.5 0 25 50 75 100 125 150 175 average forward current (a) ambient temperature ( o c) fig.1- maximum forward current derating curve resistive or inductive load 0 10 20 30 40 50 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3- maximum non-repetitive forward surge current 8.3ms single half sine wave 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2- typical reverse characteristics tj=25 tj=75 0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (a) forward voltage (v) fig. 4- typical forward characteristics pulse width=300 s 1% duty cycle
creat by art min max min max a 2.00 2.70 0.079 0.106 b 0.53 0.64 0.021 0.025 c 25.40 - 1.000 - d 3.00 3.30 0.118 0.130 e 25.40 - 1.000 - p/n = specific device code g = green compound yw = date code f = factory code document number: ds_d1505007 version: g14 marking diagram F1T1G thru f1t7g taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 1 10 100 1 10 100 junction capacitance (pf) reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vslg=50mvp-p
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1505007 version: g14 F1T1G thru f1t7g taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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