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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos a 3power-transistor ,40v ipa041n04ng datasheet rev.2.0 final powermanagement&multimarket
2 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet to-220-fp 1description features ?optimizedtechnologyfordc/dcconverters ?qualifiedaccordingtojedec 1) fortargetapplications ?n-channel,normallevel ?excellentgatechargex r ds(on) product(fom) ?verylowon-resistance r ds(on) ?100%avalanchetested ?pb-freeplating;rohscompliant ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 40 v r ds(on),max 4.1 m w i d 70 a type/orderingcode package marking relatedlinks ipa041n04n g pg-to220-fp 041n04n - 1) j-std20 and jesd22 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings at 25 c values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - 70 49 a v gs =10v, t c =25c v gs =10v, t c =100c pulsed drain current 1) i d,pulse - - 280 a t c =25c avalanche current, single pulse 2) i as - - 70 a t c =25c avalanche energy, single pulse e as - - 70 mj i d =70a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 35 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.3 k/w - smd version, device on pcb, minimal footprint r thja - - 62 k/w - smd version, device on pcb, 6 cm2 cooling area 3) r thja - - 40 k/w - 1) see figure 3 for more detailed information 2) see figure 13 for more detailed information 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 40 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2 - 4 v v ds = v gs , i d =45a zero gate voltage drain current i dss - - 0.1 10 1 100 a v ds =40v, v gs =0v, t j =25c v ds =40v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance 1) r ds(on) - 3.5 4.1 m w v gs =10v, i d =70a gate resistance r g - 1.6 2.4 w - transconductance g fs 48 96 - s | v ds |>2| i d | r ds(on)max , i d =70a table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 3400 4500 pf v gs =0v, v ds =20v, f =1mhz output capacitance c oss - 980 1300 pf v gs =0v, v ds =20v, f =1mhz reverse transfer capacitance c rss - 36 72 pf v gs =0v, v ds =20v, f =1mhz turn-on delay time t d(on) - 16 - ns v dd =20v, v gs =10v, i d =30a, r g,ext =1.6 w rise time t r - 3.8 - ns v dd =20v, v gs =10v, i d =30a, r g,ext =1.6 w turn-off delay time t d(off) - 23 - ns v dd =20v, v gs =10v, i d =30a, r g,ext =1.6 w fall time t f - 4.8 - ns v dd =20v, v gs =10v, i d =30a, r g,ext =1.6 w table6gatechargecharacteristics 2) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 18 - nc v dd =20v, i d =30a, v gs =0to10v gate charge at threshold q g(th) - 10.3 - nc v dd =20v, i d =30a, v gs =0to10v gate to drain charge q gd - 5.3 - nc v dd =20v, i d =30a, v gs =0to10v switching charge q sw - 12.5 - nc v dd =20v, i d =30a, v gs =0to10v gate charge total q g - 42 56 nc v dd =20v, i d =30a, v gs =0to10v gate plateau voltage v plateau - 5.1 - v v dd =20v, i d =30a, v gs =0to10v gate charge total, sync. fet q g(sync) - 40 - nc v ds =0.1v, v gs =0to10v output charge q oss - 41 - nc v dd =20v, v gs =0v 1) measured from drain tab to source pin 2) see 2 gate charge waveforms 2 for parameter definition d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 29 a t c =25c diode pulse current i s,pulse - - 280 a t c =25c diode forward voltage v sd - 0.87 1.2 v v gs =0v, i f =29a, t j =25c reverse recovery charge q rr - 19 - nc v r =20v, i f =29a,d i f /d t =400a/s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 4 8 12 16 20 24 28 32 36 40 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 20 40 60 80 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 0 50 100 150 200 7 v 10 v 6.5 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 50 100 150 200 0 1 2 3 4 5 6 7 8 5.5 v 6 v 6.5 v 7 v 10 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 50 100 150 200 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 20 40 60 80 100 0 20 40 60 80 100 120 g fs =f( i d ); t j =25c d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 1 2 3 4 5 6 7 8 max typ r ds(on) =f( t j ); i d =70a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0 1 2 3 4 v gs(th) =f( t j ); v gs = v ds ; i d =45a diagram11:typ.capacitances v ds [v] c [pf] 0 10 20 30 40 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c 25 c, max 175 c, max i f =f( v sd );parameter: t j d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 25 c 100 c 150 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 40 50 0 2 4 6 8 10 12 32 v 20 v 8 v v gs =f( q gate ); i d =30apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 30 32 34 36 38 40 42 44 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
11 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet 6packageoutlines figure1outlinepg-to220-fp,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
12 optimos a 3power-transistor ,40v ipa041n04ng rev.2.0,2014-03-12 final data sheet revisionhistory ipa041n04n g revision:2014-03-12,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-03-12 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms

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