two-color detectors wide spectral response range from uv through ir www.hamamatsu.com k1713/k3413-01, -002 1 structure / absolute maximum ratings wide spectral response range suitable for spectrophotometers, flame monitors, etc. noncooled type: room temperature operation for easy handling one-stage thermoelectrically cooled type: keeps the detector temperature at a constant level to make high-precision measurement laser monitors temperature controller for thermoelectrically cooled type c1103-04 flame monitors amplifier for si photodiodes c9329 radiation thermometers amplifier for pbs and pbse detectors c3757-02 spectrophotometers heatsink for thermoelectrically cooled type a3179-03 features applications options type no. dimensional outline/ window material* 1 package cooling detector photosensitive area absolute maximum ratings thermistor allowable dissipation te-cooler allowable current te-cooler allow able v oltage reverse voltage v r operating temperature topr storage temperature tstg (mm) (mw) (a) (v) (v) (c) (c) k1713-01 (1)/s t o-5 non- cooled si 2.4 2.4 --- 5 -30 to +50 -55 to +50 pbs 1.8 1.8 100 * 2 k1713-002 si 2.4 2.4 5 pbse 2.0 2.0 100 * 2 k3413-01 (2)/s to-8 one-stage te- cooled si 2.4 2.4 0.2 1.5 0.85 5 pbs 1.8 1.8 100 * 2 k3413-002 si 2.4 2.4 5 pbse 2.0 2.0 100 * 2 note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. * 1: s=sapphire glass * 2: the voltage is de ned between a pbs/pbse detector and a load resistor. the k1713/k3413-01, -002 have a bi-level structure in which an infrared transmitting si photodiode is mounted over an infrared detector element. this structure allows you to design instruments using the same optical path from uv through ir.
tow-color detectors k1713/k3413-01, -002 electrical and optical characteristics (typ. unless otherwise noted) spectral response wavelength (m) (typ. ta=25 c) 0.3 0.2 0.1 0.7 0.6 0.5 0.4 0.2 0 1.2 0.4 0.6 0.8 1.0 photosensitivity (a/w) kirdb0199ea kirdb0282eb wavelength (m) (typ. ta=25 ?c) 1.0 10 9 3.5 1.5 2.0 2.5 3.0 10 10 10 11 d* (, 600, 1) (cm ? hz 1/2 /w) td=25 ?c td=-10 ?c 2 type no. detector measurement condition peak sensitivity wavelength p cutoff frequency c photosensitivity s =p vs=15 v shunt resistance or dark resistance detectivity d* ( p, 600, 1) rise time tr v r =0 v r l =1 k 10 to 90% thermistor resistance * 6 25 c element temperature td (c) ( m) ( m) min. (a/w) typ. (a/w) (m ) min. (cm hz 1/2 /w) typ. (cm hz 1/2 /w) ( s) (k) k1713-01 si 25 0.94 1.1 0.3 0.45 300 5.5 10 12 1.4 10 13 0.2* 4 - pbs 2.2 2.9 6 10 4 (v/w) 0.2 to 2 2 10 10 5 10 10 * 3 200 max. * 5 - k1713-002 si 25 0.94 1.1 0.3 0.45 300 5.5 10 12 1.4 10 13 0.2* 4 - pbse 4.0 4.8 9.0 10 2 (v/w) 1.5 10 3 (v/w) 0.1 to 3.0 6 10 8 1.5 10 9 * 3 10* 5 - k3413-01 si 25 0.94 1.1 0.3 0.45 300 5.5 10 12 1.4 10 13 0.2* 4 9.0 pbs -10 2.4 3.1 3 10 5 (v/w) 0.5 to 10 1 10 11 2 10 11 * 3 600 max. * 5 k3413-002 si 25 0.94 1.1 0.3 0.45 300 5.5 10 12 1.4 10 13 0.2* 4 9.0 pbse -10 4.1 5.1 2.2 10 3 (v/w) 4.5 10 3 (v/w) 0.5 to 10 1 10 9 3 10 9 * 3 20* 5 * 3: light source. 500 k black body supply voltage: 15 v chopping frequency: 600 hz load resistance: nearly equal to element dark resistance noise bandwidth: 60 hz input energy: 4.8 w/cm 2 (pbse: 16.7 w/cm 2 ) * 4: =655 nm * 5: 0 to 63% * 6: thermistor b constant (-10 to +25 c)=3330 pbs photoconductive detector si photodiode
tow-color detectors k1713/k3413-01, -002 3 kirdb0283eb pbse photoconductive detector wavelength (m) (typ. ta=25 c) 1.0 5.5 4.5 5.0 2.0 3.5 4.0 1.5 2.5 3.0 10 10 10 9 10 8 10 7 d* ( p, 600, 1)(cm ? hz 1/2 /w) td=-10 c td=25 c dark current vs. reverse voltage terminal capacitance vs. reverse voltage shunt resistance vs. element temperature reverse voltage (v) 0.01 10 pa 10 0.1 1 100 pa 1 na dark current (typ. ta=25 c) kirdb0200ea kirdb0202ea kirdb0204ea reverse voltage (v) 0.01 1 pf 10 0.1 1 10 pf 100 pf terminal capacitance (typ. ta=25 c, f=10 khz) element temperature (c) -40 -20 100 k 100 0 20406080 10 t 1 t 100 g 10 g 1 g 100 m 10 m 1 m shunt resistance (typ. v r =10 mv) si photodiode si photodiode si photodiode
tow-color detectors k1713/k3413-01, -002 4 s/n vs. supply voltage supply voltage (v) signal (v) noise (v) 10 20 30 40 50 60 (typ. ta=25 c) 0 00 200 400 600 800 2 4 6 8 1 3 5 7 n (noise) s (signal) light source: black body 500 k incident light level: 4.8 w/cm 2 chopping frequency: 600 hz frequency bandwidth: 60 hz supply voltage is the value which contains load resistance. kirdb0046eb kirdb0440eb supply voltage (v) signal (v) noise (v) 120 80 (typ. ta=25 c) 0 0 200 300 400 500 700 600 100 0 4 2 14 16 18 12 10 8 6 20 20 100 40 60 light source: black body 500 k incident light level: 16.7 w/cm 2 chopping frequency: 600 hz frequency bandwidth: 60 hz supply voltage is the value which contains load resistance. s (signal) n (noise) pbse photoconductive detector pbs photoconductive detector if voltage of higher than 60 v is applied, the noise increases exponentially, degrading the s/n. the device should be operated at 60 v or less.
tow-color detectors k1713/k3413-01, -002 5 s/n vs. chopping frequency photo sensitivity vs. element temperature chopping frequency (hz) relative s/n (typ. ta=25 c) 10 1 10 2 10 3 10 1 10 2 10 3 light source: black body 500 k incident light level: 4.8 w/cm 2 supply voltage: 15 v tr=200 s s/n s (signal) n (noise) element temperature (c) relative sensitivity (typ. ta=25 c) 10 1 10 2 -20 10 3 -10 0 10 20 30 40 50 light source: black body 500 k incident light level: 4.8 w/cm 2 supply voltage: 15 v chopping frequency: 600 hz kirdb0528ea kirdb0048eb kirdb0441ea kirdb0442eb chopping frequency (hz) s/n (relative value) 10 0 10 2 10 1 10 3 10 4 10 1 10 2 10 3 n (noise) s (signal) s/n (ta=25 c) light source: black body 500 k incident energy: 16.7 w/cm 2 supply voltage: 15 v (typ. ta=25 c) 10 1 10 2 -30 -20 10 3 -10 0 10 20 30 40 50 element temperature (c) relative sensitivity light source: black body 500 k supply voltage: 15 v incident energy: 16.7 w/cm 2 chopping frequency: 600 hz pbse photoconductive detector pbse photoconductive detector pbs photoconductive detector pbs photoconductive detector increasing the chopping frequency reduces the 1/f noise and results in an s/n improvement. the s/n can also be improved by narrowing the noise bandwidth using a lock-in ampli er. cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit.
tow-color detectors k1713/k3413-01, -002 6 dark resistance, rise time vs. element temperature linearity element temperature (c) relative value (typ. ta=25 c) 10 1 10 2 10 3 -10 0 10 20 30 40 50 -20 rise time dark resistance relative output incident energy (w/cm 2 ) (typ. ta=25 c, fully illuminated) 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 dependent on nep kirdb0049eb kirdb0050ea kirdb0443eb kirdb0056ea element temperature (c) relative value (typ. ta=25 c) 10 1 10 2 10 3 02 0 10 4030 50 -30 -20 -10 dark resistance rise time relative sensitivity incident li g ht level ( w / cm 2 ) 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 (typ. ta=25 c, fully illuminated) dependent on nep pbse photoconductive detector pbse photoconductive detector pbs photoconductive detector pbs photoconductive detector by making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower.
tow-color detectors k1713/k3413-01, -002 element temperature (c) (typ.) -40 10 3 30 -20 10 20 -30 -10 0 10 6 10 5 10 4 resistance (w) kirdb0278ea thermistor temperature characteristics 7 cooling characteristics of te-cooler current (a) (typ. ta=25 c, thermal resistance of heatsink=3 c/w) 0 -50 1.6 1.2 1.4 0.4 0.8 1.0 0.2 0.6 0 -30 30 -20 -40 20 -10 10 element temperature (c) kirdb0276ea current vs. voltage characteristics of te-cooler (typ. ta=25 c, thermal resistance of heatsink=3 c/w) voltage (v) 0 0 1.2 0.4 0.8 1.0 0.2 0.6 1.0 0.4 1.6 0.6 0.2 1.4 0.8 1.2 current (a) kirdb0277ea
cat. no. kird1029e07 jun. 2013 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of june, 2013. tow-color detectors k1713/k3413-01, -002 8 dimensional outlines (unit: mm) 0.4 lead 30 min. 8.1 0.2 3.3 0.2 4.3 0.2 6.1 0.2 window 5.5 0.2 9.2 0.3 5.1 0.2 pbs pbse si si (n) si (p) pbs, pbse pbs, pbse 14 0.2 window 10 0.2 15.3 0.2 5.1 0.2 6.1 0.2 10.0 0.2 12 min. 0.45 lead pbs pbse si sapphire glass 10.2 0.2 5.1 0.2 pbs, pbse pbs, pbse te-cooler (-) te-cooler (+) thermistor si (-) si (+) 10.2 0.2 5.1 0.2 kirda0041ee kirda0043ee (2) k3413-01/-002 (1) k1713-01/-002
|
