View LTC4440-5-15_8251813.PDF datasheet online --- IC-ON-LINE

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1 synchronous phase-modulated full-bridge converter ltc4440-5 driving a 1000pf capacitive load typical a pplica t ion v cc inp gnd boost tg ts ltc4440-5 v in 36v to 60v v cc 4v to 15v v cc inp gnd boost tg ts ltc4440-5 ltc3722-1 ? ? 4440 ta01 tg-ts 2v/div inp 2v/div 50ns/div v cc = boost-ts = 5v 4440-5 ta02 fea t ures descrip t ion high speed, high voltage, high side gate driver the lt c ? 4440-5 is a high frequency high side n-channel mosfet gate driver that is designed to operate in appli - cations with v in voltages up to 60v. the ltc4440-5 can also withstand and continue to function during 80v v in transients. the powerful driver capability reduces switch - ing losses in mosfets with high gate capacitances. the l tc4440-5 s pull-up has a peak output current of 1.1a and its pull-down has an output impedance of 1.85. the ltc4440-5 features supply independent ttl/cmos compatible input thresholds with 350mv of hysteresis. the input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 95v above ground. the ltc4440-5 is optimized for driving (5v) logic level fets and contains an undervoltage lockout circuit that disables the external mosfet when activated. the ltc4440-5 is available in the low profile (1mm) sot-23 or a thermally enhanced 8-lead msop package. parameter ltc4440-5 ltc4440a-5 ltc4440 max operating ts 60v 80v 80v absolute max ts 80v 100v 100v mosfet gate drive 4v to 15v 4v to 15v 8v to 15v v cc uv + 3.2v 3.2v 6.3v v cc uv C 3.04v 3.04v 6.0v a pplica t ions n wide operating v in range: up to 60v n rugged architecture tolerant of 80v v in transients n powerful 1.85 driver pull-down (with 6v supply) n powerful 1.1a peak current driver pull-up (with 6v supply) n 7ns fall time driving 1000pf load n 10ns rise time driving 1000pf load n drives standard threshold mosfets n ttl/cmos compatible inputs with hysteresis n input thresholds are independent of supply n undervoltage lockout n low profile (1mm) sot-23 (thinsot?) and thermally enhanced 8-pin msop packages n telecommunications power systems n distributed power architectures n server power supplies n high density power modules n general purpose low-side driver l , lt, ltc, ltm, linear technology, the linear logo and polyphase are registered trademarks and thinsot is a trademark of linear technology corporation. all other trademarks are the property of their respective owners. protected by u.s. patents, including 6677210. ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
2 a bsolu t e maxi m u m r a t ings (note 1) supply voltage v cc ........................................................ C0.3v to 15v boost C ts ........................................... C0 .3v to 15v inp voltage ................................................ C 0.3v to 15v boost voltage (continuous) ..................... C0 .3v to 85v boost voltage (100ms) ............................ C 0.3v to 95v ts voltage (continuous) ............................... C 5v to 70v ts voltage (100ms) ...................................... C5 v to 80v peak output current < 1s (tg) .................................. 4a o perating ambient temperature range (note 2) ............................................... C 40c to 85c junction temperature (note 3) ............................. 1 25c storage temperature range .................. C 65c to 150c lead temperature (soldering, 10 sec) ................... 3 00c e lec t rical c harac t eris t ics the denotes specifications which apply over the full operating temperature range, otherwise specifications are at t a = 25c. v cc = v boost = 6v, v ts = gnd = 0v, unless otherwise noted. symbol parameter conditions min typ max units main supply (v cc ) i vcc dc supply current normal operation uvlo inp = 0v v cc < uvlo threshold (falling) C 0.1v 200 18 325 40 a a uvlo undervoltage lockout threshold v cc rising v cc falling hysteresis l l 2.75 2.60 3.20 3.04 160 3.65 3.50 v v mv bootstrapped supply (boost C ts) i boost dc supply current normal operation inp = 0v inp = 6v 0 310 450 a a o r d er i n f or m a t ion lead free finish tape and reel part marking package description temperature range ltc4440ems8e-5#pbf ltc4440ems8e-5#trpbf ltbrg 8-lead plastic msop C40c to 85c ltc4440es6-5#pbf ltc4440es6-5#trpbf ltbrf 6-lead plastic sot-23 C40c to 85c consult ltc marketing for parts specified with wider operating temperature ranges. consult ltc marketing for information on nonstandard lead based finish parts. for more information on lead free part marking, go to: http://www .linear.com/leadfree/ for more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ 1 2 3 4 inp gnd v cc gnd 8 7 6 5 ts tg boost nc top view 9 ms8e package 8-lead plastic msop t jmax = 125c, ja = 40c/w exposed pad (pin 9) is gnd, must be soldered to pcb v cc 1 gnd 2 inp 3 6 boost 5 tg 4 ts top view s6 package 6-lead plastic sot-23 t jmax = 125c, ja = 230c/w p in c on f igura t ion ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
3 e lec t rical c harac t eris t ics symbol parameter conditions min typ max units input signal (inp) v ih high input threshold inp ramping high l 1.2 1.6 2 v v il low input threshold inp ramping low l 0.8 1.25 1.6 v v ih C v il input voltage hysteresis 0.350 v i inp input pin bias current 0.01 2 a output gate driver (tg) v oh high output voltage i tg = C10ma, v oh = v boost C v tg 0.7 v v ol low output voltage i tg = 100ma l 185 275 mv i pu peak pull-up current l 0.75 1.1 a r ds output pull-down resistance l 1.85 2.75 switching timing t r output rise time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 10 100 ns ns t f output fall time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 7 70 ns ns t plh output low-high propagation delay l 35 65 ns t phl output high-low propagation delay l 33 65 ns the denotes specifications which apply over the full operating temperature range, otherwise specifications are at t a = 25c. v cc = v boost = 6v, v ts = gnd = 0v, unless otherwise noted. note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired. note 2: the ltc4440-5 is guaranteed to meet performance specifications from 0c to 85c. specifications over the C40c to 85c operating temperature range are assured by design, characterization and correlation with statistical process controls. note 3: t j is calculated from the ambient temperature t a and power dissipation pd according to the following formula: t j = t a + (pd ? ja c/w) note 4: failure to solder the exposed back side of the ms8e package to the pc board will result in a thermal resistance much higher than 40c/w. typical p er f or m ance c harac t eris t ics v cc supply quiescent current vs voltage boost-ts supply quiescent current vs voltage output low voltage (v ol ) vs supply voltage v cc supply voltage (v) 0 350 300 250 200 150 100 50 0 4440-5 g01 5 10 15 quiescent current (a) inp = gnd inp = v cc boost-ts supply voltage (v) 0 quiescent current (a) 150 200 250 15 4440-5 g02 100 50 0 5 10 300 350 400 inp = v cc boost-ts supply voltage (v) 3 0 output (tg-ts) voltage (mv) 50 100 150 200 300 5 7 9 11 4440-5 g03 13 4 6 8 10 12 14 15 250 ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
4 typical p er f or m ance c harac t eris t ics v cc supply current vs temperature v cc undervoltage lockout thresholds vs temperature boost-ts quiescent current vs temperature input (inp) threshold vs temperature input threshold hysteresis vs temperature peak driver (tg) pull-up current vs temperature output high voltage (v oh ) vs supply voltage input (inp) thresholds vs supply voltage 2mhz operation boost-ts supply voltage (v) 4 high output voltage (v) 10 12 14 15 4440-5 g04 6 0 5 6 7 8 9 10 11 12 13 14 16 8 4 2 i tg = 1ma i tg = 100ma i tg = 10ma temperature (c) ?55 0.8 input threshold (v) 1.0 1.4 1.6 1.8 ?15 25 v ih v il 45 125 4440-5 g11 1.2 ?35 5 65 85 105 2.0 v cc supply voltage (v) 5 input threshold (v) 1.2 1.6 2.0 13 4440-5 g05 0.8 0.4 1.0 1.4 1.8 0.6 0.2 0 7 9 11 64 14 8 10 12 15 v ih v il temperature (c) ?55 2.5 uvlo threshold voltage (v) 2.6 2.8 2.9 3.0 3.5 3.2 ?15 25 45 125 4440-5 g09 2.7 3.3 3.4 3.1 ?35 5 65 85 105 rising falling temperature (c) ?55 hysteresis (v ih -v il ) (mv) 340 350 360 105 4440-5 g12 330 320 300 ?15 25 65 ?35 125 5 45 85 310 380 370 input (inp) 5v/div output (tg) 5v/div v cc = boost-ts = 12v 250ns/div 4440-5 g07 temperature (c) ?55 quiescent current (a) 200 250 300 105 4440-5 g10 150 100 0 ?15 25 65 ?35 125 5 45 85 50 400 350 temperature (c) ?55 ?35 ?15 5 25 45 65 85 105 125 0 peak current (a) 0.5 1.0 1.5 3.5 4440-5 g13 2.0 2.5 3.0 boost-ts = 15v boost-ts = 12v boost-ts = 6v boost-ts = 4v temperature (c) ?55 0 quiescent current (a) 50 150 200 250 ?15 25 45 125 4440-5 g08 100 ?35 5 65 85 105 inp = v cc inp = gnd ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
5 typical p er f or m ance c harac t eris t ics driving a 3300pf capacitive load driving a 3300pf capacitive load output driver pull-down resistance vs temperature propagation delay vs temperature temperature (c) ?55 0 r ds () 0.5 1.5 2.0 2.5 ?15 25 45 125 4440-5 g14 1.0 ?35 5 65 85 105 3.0 boost-ts = 4v boost-ts = 15v boost-ts = 12v boost-ts = 6v temperature (c) ?55 20 propagation delay (ns) 25 35 40 45 ?15 25 45 125 4440-5 g15 30 ?35 5 65 85 105 50 v cc = boost = 6v t plh t phl tg-ts 2v/div inp 2v/div 50ns/div v cc = boost-ts = 5v 4440-5 g16 tg-ts 5v/div inp 2v/div 50ns/div v cc = boost-ts = 12v 4440-5 g17 p in func t ions v cc (pin 1): chip supply. this pin powers the internal low side circuitry. a low esr ceramic bypass capacitor should be tied between this pin and the gnd pin (pin 2). gnd (pin 2): chip ground. inp (pin 3): input signal. ttl/cmos compatible input referenced to gnd (pin 2). ts (pin 4): top (high side) source connection or gnd if used in ground referenced applications. tg (pin 5): high current gate driver output (top gate). this pin swings between ts and boost. boost (pin 6): high side bootstrapped supply. an ex - ternal capacitor should be tied between this pin and ts (pin?4). normally , a bootstrap diode is connected between v cc (pin?1) and this pin. voltage swing at this pin is from v cc ?C v d to v in + v cc C v d , where v d is the forward volt - age drop of the bootstrap diode. sot -23 package ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
6 p in func t ions b lock diagra m ti m ing diagra m inp (pin 1): input signal. ttl/cmos compatible input referenced to gnd (pin 2). gnd (pins 2, 4): chip ground. v cc (pin 3): chip supply. this pin powers the internal low side circuitry. a low esr ceramic bypass capacitor should be tied between this pin and the gnd pin (pin 2). nc (pin 5): no connect. no connection required. for convenience, this pin may be tied to pin 6 (boost) on the application board. boost (pin 6): high side bootstrapped supply. an external capacitor should be tied between this pin and ts (pin?8). normally, a bootstrap diode is connected between v cc (pin?3) and this pin. voltage swing at this pin is from v cc C v d to v in + v cc C v d , where v d is the forward voltage drop of the bootstrap diode. tg (pin 7): high current gate driver output (top gate). this pin swings between ts and boost. ts (pin 8): top (high side) source connection or gnd if used in ground referenced applications. exposed pad (pin 9): ground. must be electrically con - nected to pins 2 and 4 and soldered to pcb ground for optimum thermal per formance. exposed pad ms8e package boost ts gnd tg boost 44405 bd v in up to 60v, transient up to 80v ts undervoltage lockout level shifter v cc 4v to 15v gnd inp v ih 90% 10% t r input (inp) output (tg) input rise/fall time < 10ns v il t f t plh 4440 td t phl ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
7 a pplica t ions i n f or m a t ion figure 1. capacitance seen by tg during switching overview the ltc4440-5 receives a ground-referenced, low voltage digital input signal to drive a high side n-channel power mosfet whose drain can float up to 80v above ground, eliminating the need for a transformer between the low voltage control signal and the high side gate driver. the ltc4440-5 normally operates in applications with input supply voltages (v in ) up to 60v, but is able to withstand and continue to function during 80v, 100ms transients on the input supply. the powerful output driver of the ltc4440-5 reduces the switching losses of the power mosfet, which increase with transition time. the ltc4440-5 is capable of driv - ing a 1nf load with 10ns rise and 7ns fall times using a bootstrapped supply voltage v boostCts of 6v. input stage the ltc4440-5 employs ttl/cmos compatible input logic level or thresholds that allow a low voltage digital signal to drive standard threshold power mosfets. the ltc4440-5 contains an internal voltage regulator that biases the input buffer, allowing the input thresholds (v ih = 1.6v, v il = 1.25v) to be relatively independent of variations in v cc . the 350mv hysteresis between v ih and v il eliminates false triggering due to noise during switching transitions. however, care should be taken to keep this pin from any noise pickup, especially in high frequency, high voltage applications. the ltc4440-5 input buffer has a high input impedance and draws negligible input current, simplifying the drive circuitry required for the input. output stage a simplified version of the ltc4440-5s output stage is shown in figure 1. the pull-down device is an n-channel mosfet (n1) and the pull-up device is an npn bipolar junction transistor (q1). the output swings from the lower rail (ts) to within an npn v be (~0.7v) of the positive rail (boost). this large voltage swing is important in driv- ing external power mosfets, whose r ds(on) is inversely proportional to its gate overdrive voltage (v gs C v th ). the ltc4440-5s peak pull-up (q1) current is 1.1a while the pull-down (n1) resistance is 1.85, with a boost- ts supply of 6v. the low impedance of n1 is required to discharge the power mosfets gate capacitance during high-to-low signal transitions. when the power mosfets gate is pulled low (gate shorted to source through n1) by the ltc4440-5, its source (ts) is pulled low by its load (e.g., an inductor or resistor). the slew rate of the source/ gate voltage causes current to flow back to the mosfets gate through the gate-to-drain capacitance (c gd ). if the mosfet driver does not have sufficient sink current ca - pability (low output impedance), the current through the power mosfet s c gd can momentarily pull the gate high, turning the mosfet back on. a similar scenario exists when the ltc4440-5 is used to drive a low side mosfet. when the low side power mosfets gate is pulled low by the ltc4440-5, its drain voltage is pulled high by its load (e.g., inductor or resis - tor). the slew rate of the drain voltage causes current to flow back to the mosfet s gate through its gate-to-drain capacitance. if the mosfet driver does not have sufficient sink current capability (low output impedance), the current through the power mosfets c gd can momentarily pull the gate high, turning the mosfet back on. rise/fall time since the power mosfet generally accounts for the ma - jority of the power loss in a converter, it is important to quickly turn it on or off, thereby minimizing the transition time in its linear region. the l tc4440-5 can drive a 1nf load with a 10ns rise time and 7ns fall time. the ltc4440-5s rise and fall times are determined by the peak current capabilities of q1 and n1. the predriver that drives q1 and n1 uses a nonoverlapping transition scheme to minimize cross-conduction currents. n1 is fully turned off before q1 is turned on and vice versa. boost v in up to 100v ts v ? tg c gd power mosfet load inductor c gs 4440 f01 ltc4440-5 q1 n1 ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
8 a pplica t ions i n f or m a t ion power dissipation to ensure proper operation and long-term reliability, the ltc4440-5 must not operate beyond its maximum temperature rating. package junction temperature can be calculated by: t j = t a + pd ( ja ) where: t j = junction temperature t a = ambient temperature pd = power dissipation ja = junction-to-ambient thermal resistance power dissipation consists of standby and switching power losses: pd = p stdby + p ac where: p stdby = standby power losses p ac = ac switching losses the ltc4440-5 consumes very little current during standby. the dc power loss at v cc = 6v and v boostCts = 6v is only (200a)(6v) = 1.2mw with inp = 0v. ac switching losses are made up of the output capacitive load losses and the transition state losses. the capacitive load losses are primarily due to the large ac currents needed to charge and discharge the load capacitance dur - ing switching. load losses for the output driver driving a pure capacitive load c out would be: load capacitive power = (c out )(f)(v boostCts ) 2 the power mosfets gate capacitance seen by the driver output varies with its v gs voltage level during switching. a power mosfets capacitive load power dissipation can be calculated using its gate charge, q g . the q g value corresponding to the mosfets v gs value (v cc in this case) can be readily obtained from the manufacturers q g vs v gs curves: load capacitive power (mos) = (v boostCts )(q g )(f) transition state power losses are due to both ac currents required to charge and discharge the drivers internal nodal capacitances and cross-conduction currents in the internal gates. undervoltage lockout (uvlo) the ltc4440-5 contains an undervoltage lockout detec - tor that monitors v cc . when v cc falls below 3.04v, the internal buffer is disabled and the output pin tg is pulled down to ts. bypassing and grounding the ltc4440-5 requires proper bypassing on the v cc and v boostCts supplies due to its high speed switching (nanoseconds) and large ac currents (amperes). careless component placement and pcb trace routing may cause excessive ringing and under/overshoot. to obtain the optimum performance from the ltc4440-5: a. mount the bypass capacitors as close as possible between the v cc and gnd pins and the boost and ts pins. the leads should be shortened as much as possible to reduce lead inductance. b. use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. remember that the ltc4440-5 switches >2a peak currents and any significant ground drop will degrade signal integrity. c. plan the power/ground routing carefully. know where the large load switching current is coming from and going to. maintain separate ground return paths for the input pin and the output power stage. d. keep the copper trace between the driver output pin and the load short and wide. e. when using the ms8e package, be sure to solder the exposed pad on the back side of the ltc4440-5 package to the board. correctly soldered to a 2500mm 2 double- sided 1oz copper board, the ltc4440-5 has a thermal resistance of approximately 40c/w. failure to make good thermal contact between the exposed back side and the copper board will result in thermal resistances far greater than 40c/w. ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
9 typical a pplica t ions 18 10 911 12v v in 12 ltc3722egn-1 pdly outf oute compss pgndgnd cs v in sbus uvlo 1f adly 330pf mmbt3904 2.2nf 100k d12 5.1v t3 1(1.5mh):0.5 t1 5(105h):1:1 t2 5:5(105h):1:1 2.49k 9.53k 10k 2.7k 470 1/4w l4 1mh c3 68f 20v v h ? ? 16 15 8 1 9 5 4 150 0.02 1.5w 30.1k 220pf 100 330 1.10k 909 4.87k 1/4w 4.87k 1/4w 51 2w 220pf 182k 20k 1/4w 220pf 4.99k 20k 180pf 68nf 220pf 0.47f 150k sync pv cc cse + ltc3901egn cse ? 8 6 5 1 4 10 13 7 1f 1f 4440 ta03 ?v out v out ?v out d10 10v v out me me2 gnd pgnd gnd2 pgnd2 timer v cc 330pf 2 3 1.10k 909 39.2k 100 1k csf + ?v out v out v out ?v out v out 12v/35a ?v out csf ? 11 12 mf mf2 14 15 16 22nf si7852dp 4 si7852dp 4 si7852dp 2 l1 1.3h 11 4 2 12v d7 d8 4 2 1 6 ? ???? ?? ? 10 8 7 + 1 0.22f si7852dp 2 3 6 7 824 a d2 ltc4440-5ems8e boost inp tg tsgndgnd v cc 12v 1 0.22f si7852dp 2 3 6 7 8 12vd 24 c d3 d4 d5 51 2w 0.47f 100v ltc4440-5ems8e boost inp tg tsgndgnd v cc 12v 1f 100v 4 v in v in ?v in 36v to 60v 1f 100v 17 d outd 19 10 10 c outc 20 b outb 21 a outa c1, c2 180f 16v 2 + 1f 0.47f, 100v tdk c3216x7r2a474m 1f, 100v tdk c4532x7r2a105m c1, c2: sanyo 16sp180m c3: avx tpse686m020r0150 c4: murata de2e3kh222mb3b d1, d4-d6: murs120t3 d2, d3, d7, d8: bas21 d9: mmbz5226b d10: mmbz5240b d11: bat54 d12: mmbz231b l1: sumida cdep105-1r3mc-50 l2: pulse pa0651 l3: pa1294.910 l4: coilcraft do1608c-105 q1, q2: zetex fmmt619 q3, q4: zetex fmmt718 t1, t2: pulse pa0526 t3: pulse pa0785 6 3 4 22236 33k 5 7 d11 8.25k i sns 5v ref i sns 0.1f 5 8 1 2 1 moc207 c4 2.2nf 250v 0.047f 3 6 5 8 gnd-f v + gnd-s coll ref lt1431cs8 1.1k 22 200k 750 100 d9 3.3v 0.02 1.5w v h d1 d6 13k 1/2w 0.47f 100v 820pf 200v l3 0.85h 15 1w 0.47f 100v si7852dp 2 12vb q1 q3 q2 q4 11 10 8 7 mmbt3904 fb sprg r leb 10k 13 sync 5.1k 1 nc 8 dprg 2 v ref 5v ref 14 c t 24 l2 150nh ? ltc3722/ltc4440-5 420w 36v-60v in to 12v/35a isolated full-bridge supply ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
10 typical a pplica t ions ltc3723-1 240w 42-56v in to 12v/20a isolated 1/4brick (2.3" 1.45") 5 46 a b 12v v in 15 ltc3723egn-1 drvb sdrb sdra comp cs v cc uvlo 9 150k 1 0.47f 1f drva dprg v ref sprg gnd ss fb c t 330pf 22nf 100k d8 10v 68nf 270pf t2 1(1.5mh):0.5 t1 4t:6t(65hmin):6t:2t:2t 243k 2.49k 9.53k 10k 750 1k 100 1/4w 813 3 si7370dp 2 l4 1mh c3 68f 20v v f d2 ? ? 3 2 8 1 9 5 4 16 10k 33k 200 1/4w r1 0.03 1.5w 66.5k rleb 12 7 14 220pf 22nf 100 665 1k 866 6.19k 1/4w 1.5nf 464k 30k 1/4w sync pv cc csf + v f ltc3901egn csf ? 8 11 12 1 4 10 13 7 22nf 1f 4.7f 4440 ta05 ?v out v out ?v out d7 10v v out mf mf2 gnd pgnd gnd2 pgnd2 timer v cc 470pf 14 15 1k 866 42.2k 1k 100 6.19k 1/4w cse + v e ?v out v out v f v out 12v/20a ?v out cse ? 6 5 me me2 2 3 16 si7370dp 2 si7852dp si7852dp l5 0.56h 11 2 4 12v d5 d6 3 5 1 6 ? ? ? ? ? 9 7 v e + 0.1f si7852dp 1 6 5 4 b 2 a d3 ltc4440-5es6 boost inp tg tsgnd v cc 12v 3 0.1f si7852dp 1 6 5 42 b d4 ltc4440-5es6 boost inp tg tsgnd v cc 12v 1f 100v 3 v in v in ?v in 42v to 56v 1f 100v c1, c2 47f 16v 2 + 1f 1f 100v 1k 1/4w 1f, 100v tdk c3225x7r2a105m c1, c2: sanyo 16tqc47m c3: avx tpse686m020r0150 c4: murata ghm3045x7r222k-gc d2: diodes inc. es1b d3-d6: bas21 d7, d8: mmbz5240b l4: coilcraft do1608c-105 l5: coilcraft do1813p-561hc l6: pulse pa1294.132 or panasonic etqp1h1r0bfa r1, r2: irc lrc2512-r03g t1: pulse pa0805.004 t2: pulse pa0785 6 10 i sns i sns 0.1f 11 5 8 1 2 1 moc207 c4 2.2nf 250v 0.1f 3 6 5 8 gnd-f v + gnd-s coll ref lt1431cs8 a 1.5k 22 4.7 4.7 r2 0.03 1.5w v e 470pf 100v l6 1.25h 10 1w 6 93 efficiency (%) 94 95 96 97 8 10 12 load current (a) 14 16 18 20 42v in 48v in 56v in mmbt3904 ? ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
11 p ackage descrip t ion please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. msop (ms8e) 0213 rev k 0.53 0.152 (.021 .006) seating plane note: 1. dimensions in millimeter/(inch) 2. drawing not to scale 3. dimension does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.152mm (.006") per side 4. dimension does not include interlead flash or protrusions. interlead flash or protrusions shall not exceed 0.152mm (.006") per side 5. lead coplanarity (bottom of leads after forming) shall be 0.102mm (.004") max 6. exposed pad dimension does include mold flash. mold flash on e-pad shall not exceed 0.254mm (.010") per side. 0.18 (.007) 0.254 (.010) 1.10 (.043) max 0.22 ? 0.38 (.009 ? .015) typ 0.86 (.034) ref 0.65 (.0256) bsc 0 ? 6 typ detail ?a? detail ?a? gauge plane 1 2 3 4 4.90 0.152 (.193 .006) 8 8 1 bottom view of exposed pad option 7 6 5 3.00 0.102 (.118 .004) (note 3) 3.00 0.102 (.118 .004) (note 4) 0.52 (.0205) ref 1.68 (.066) 1.88 (.074) 5.10 (.201) min 3.20 ? 3.45 (.126 ? .136) 1.68 0.102 (.066 .004) 1.88 0.102 (.074 .004) 0.889 0.127 (.035 .005) recommended solder pad layout 0.65 (.0256) bsc 0.42 0.038 (.0165 .0015) typ 0.1016 0.0508 (.004 .002) detail ?b? detail ?b? corner tail is part of the leadframe feature. for reference only no measurement purpose 0.05 ref 0.29 ref ms8e package 8-lead plastic msop, exposed die pad (reference ltc dwg # 05-08-1662 rev k) ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
12 p ackage descrip t ion please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. 1.50 ? 1.75 (note 4) 2.80 bsc 0.30 ? 0.45 6 plcs (note 3) datum ?a? 0.09 ? 0.20 (note 3) s6 tsot-23 0302 2.90 bsc (note 4) 0.95 bsc 1.90 bsc 0.80 ? 0.90 1.00 max 0.01 ? 0.10 0.20 bsc 0.30 ? 0.50 ref pin one id note: 1. dimensions are in millimeters 2. drawing not to scale 3. dimensions are inclusive of plating 4. dimensions are exclusive of mold flash and metal burr 5. mold flash shall not exceed 0.254mm 6. jedec package reference is mo-193 3.85 max 0.62 max 0.95 ref recommended solder pad layout per ipc calculator 1.4 min 2.62 ref 1.22 ref s6 package 6-lead plastic tsot-23 (reference ltc dwg # 05-08-1636) ltc4440-5 44405fb for more information www.linear.com/ltc4440-5
13 information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no representa - tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. r evision h is t ory rev date description page number b 1013 added comparison table 1 (revision history begins at rev b) ltc4440-5 44405fb for more information www.linear.com//ltc4440-5
14 ? linear technology corporation 2005 lt 1013 rev b ? printed in usa linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax : (408) 434-0507 www.linear.com/ltc4440-5 r ela t e d p ar t s typical a pplica t ion 240w 42v-56v in to unregulated 12v half-bridge converter 5 46 a b 11v 12vv in mmbt3904 15 ltc3723egn-2 drvb sdrb sdra comp v cc uvlo 12 62k 330pf 12v mmbz5242b 150pf 1 0.47f 1f drva dprg v ref ramp sprg gnd sscs fb c t 470pf 0.47f 4.7k 0.22f 2n7002 b cs + t3 1(1.5mh):0.5 t1 5:4:4:2:2 1f 89 13 1k 22 0.1f c1 2.2nf 250v 1f 100v 1f 100v 1f 100v 1f 100v 0.22f si7370dp 2 si7852dp 2 1 6 5 42 3 a si7370dp 2 1500pf 100v l2 0.22h l3 1mh c3 68f v f ? ? 11 3 2 8 1 9 5 4 16 10k 120 30.1k 7 10 14 7.5 d4 d5 7.5 220pf 100 10k 3k 4.7k 1/4w 100pf 215k 15k 1/4w sync pv cc csf + v f ltc3901egn csf ? 8 11 12 1 4 10 13 7 1f 1f 4440 ta04 ?v out 10v mmbz5240b 1k v out mf mf2 gnd pgnd gnd2 pgnd2 timer v cc 330pf 14 15 10k 3k 33.2k 100 4.7k 1/4w cse + v e 20 1w ?v out v out v out ?v out cse ? 6 5 me me2 2 3 16 mmbt3904 si7852dp 2 l1 0.56h 72 4 cs + t2 70(980h):1 8 7 1 3 12v d2 d1 d3 3 5 1 6 ? ? ? ? ? ? ? 9 11 v e + ltc4440-5es6 boost inp tg tsgnd v cc 11v 1f 100v v in v in ?v in 48v in 1f 100v c2 180f 16v + 1f 1f, 100v tdk c4532x7r2a105m c1: murata de2e3kh222mb3b c2: sanyo 16sp180m c3: avx tpse686m020r0150 d1-d3: bas21 d4, d5: mmbd914 l1: coilcraft do1813p-561hc l2: sumida cdep105-0r2nc-50 l3: coilcraft do1608c-105 t1: pulse pa0801.005 t2: pulse p8207 t3: pulse pa0785 part number description comments lt ? 1161 quad protected high side mosfet driver 8v to 48v supply range, t on = 200s, t off = 28s ltc1693 family high speed dual mosfet drivers 1.5a peak output current, 4.5v v in 13.2v lt1952 single switch synchronous forward controller 25w to 500w dc/dc controller lt3010/lt3010-5 50ma, 3v to 80v low dropout micropower regulators low quiescent current (30a), stable with small (1f) ceramic capacitor lt3430 high voltage, 3a, 200khz step-down switching regulator input voltages up to 60v, internal 0.1 power switch, current mode architecture, 16-pin exposed pad tssop package ltc3722-1/ ltc3722-2 synchronous dual mode phase modulated full-bridge controllers adaptive zero voltage switching, high output power levels (up to kilowatts) l tc3723-1/ l tc3723-2 synchronous push-pull pwm controllers current mode or voltage mode push-pull controllers ltc3900 synchronous rectifier driver for forward converters programmable time out, reverse inductor current sense ltc3901 secondary side synchronous driver for push-pull and full-bridge converters programmable time out, reverse inductor current sense ltc4440 high speed, high voltage, high side gate driver high side source up to 100v, 8v to 15v gate drive supply, undervoltage lockout, 6-lead thinsot or 8-lead exposed msop package l tc4441 6a mosfet driver adjustable gate drive from 5v to 8v , 5v v in 28v ltc4440-5 44405fb for more information www.linear.com/ltc4440-5

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