svf8n60t/f_datasheet 8a, 600v n-channel mosfet general description svf8n60t/f is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure vdmos technology. the improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. features ? 8a,600v,r ds(on)(typ.) =0.96 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering information part no. package marking material packing svf8n60t to-220-3l svf8n60t pb free tube SVF8N60F to-220f-3l SVF8N60F pb free tube hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 1 of 8
svf8n60t/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 2 of 8 absolute maximum ratings (t c =25 c unless otherwise noted) rating characteristics symbol svf8n60t SVF8N60F unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 8.0 drain current t c =100c i d 5.0 a drain current pulsed i dm 32.0 a 147 48 w power dissipation(t c =25 c) -derate above 25 c p d 1.18 0.38 w/ c single pulsed avalanche energy (note 1) e as 450 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics rating characteristics symbol svf8n60t SVF8N60F unit thermal resistance, junction-to-case r jc 0.85 2.6 c/w thermal resistance, junction-to-ambient r ja 62.50 120 c/w electrical characteristics (t c =25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =4.0a -- 0.96 1.2 input capacitance c iss -- 910 -- output capacitance c oss -- 105 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 2.43 -- pf turn-on delay time t d(on) -- 29.00 -- turn-on rise time t r -- 71.33 -- turn-off delay time t d(off) -- 34.93 -- turn-off fall time t f v dd =300v, r g =25 , i d =8.0a (note 2,3) -- 32.80 -- ns total gate charge q g -- 14.83 -- gate-source charge q gs -- 5.90 -- gate-drain charge q gd v ds =480v,i d =8.0a, v gs =10v (note 2,3) -- 4.00 -- nc
svf8n60t/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 3 of 8 source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous source current i s -- -- 8.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 32.0 a diode forward voltage v sd i s =8.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 520.65 -- ns reverse recovery charge q rr i s =8.0a,v gs =0v, di f /dt=100a/s -- 3.72 -- c notes: 1. l=30mh, i as =5.0a, v dd =110v, r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature.
svf8n60t/f_datasheet typical characteristics hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 4 of 8
svf8n60t/f_datasheet typical characteristics(continued) hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 5 of 8 0.8 0.9 1.1 1.0 -100 -50 0 50 100 200 junction temperature ? t j (c) figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature junction temperature ? t j (c) 1.2 150 notes: 1. v gs =0v 2. i d =250a 0.0 0.5 2.0 1.5 -100 -50 0 50 100 200 3.0 150 1.0 2.5 25 50 75 100 125 150 0 2 4 6 8 figure 10. maximum drain current vs. case temperature case temperature ? t c (c) figure 9-1. max. safe operating area(svf8n60t) drain source voltage - v ds (v) notes: 1. v gs =10v 2. i d =4.0a dc 10ms 1ms 100s 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse figure 9-2. max. safe operating area(SVF8N60F) drain source voltage - v ds (v) dc 10ms 1ms 100s 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse
svf8n60t/f_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 6 of 8 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
svf8n60t/f_datasheet package outline to-220f-3l unit: mm 3.300.25 4.720.30 10.030.30 hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 7 of 8 2.800.30 2.550.25 15.750.50 9.800.50 2.54 type 1.47max 0.800.15 0.500.15 15.800.50 6.700.30 3.200.20 to-220-3l unit: mm
svf8n60t/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.3 2012.06.15 http://www.silan.com.cn page 8 of 8 disclaimer : ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! attachment revision history date rev description page 2011.02.11 1.0 original 2011.08.30 1.1 modify ?package outline? 2012.06.04 1.2 modify the values of t rr and q rr 2012.06.15 1.3 modify the typ. value of r ds(on)
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