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this is information on a product in full production. august 2014 docid18354 rev 13 1/18 18 strh40p10 rad-hard p-channel 100 v, 34 a power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 100 krad tid ? see radiation hardened applications ? satellite ? high reliability description this p-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for product in die form and for other packages. to-254aa 1 2 3 d (1) g (3) s (2) sc06140p v bdss i d r ds(on) q g 100 v 34 a 0.060 ohm 162 nc table 1. device summary part number escc part number quality level package lead finish mass (g) temp. range eppl STRH40P10HY1 - engineering model to-254aa gold 10 -55 to 150c - strh40p10hyg 5205/025/01 escc flight target strh40p10hyt 5205/025/02 solder dip - www.st.com
contents strh40p10 2/18 docid18354 rev 13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 docid18354 rev 13 3/18 strh40p10 electrical ratings 1 electrical ratings (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 100 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) 34 a i d (3) drain current (continuous) at t c = 100 c 21 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 136 a p tot (3) total dissipation 176 w dv/dt (5) 5. i sd 40 a, di/dt 100 a/s, v dd = 80% v (br)dss. peak diode recovery voltage slope 2.5 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.71 c/w r thc-s case-to-sink typ 0.21 c/w electrical ratings strh40p10 4/18 docid18354 rev 13 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 17 a e as (1) 1. maximum rating value. single pulse avalanche energy (starting t j =25 c, i d = 17 a, v dd =50 v) 1133 mj e as single pulse avalanche energy (starting t j =110 c, i d = 17 a, v dd =50 v) 332 mj e ar repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 25 mj repetitive avalanche (v dd = 50 v, i ar = 17 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 8 docid18354 rev 13 5/18 strh40p10 electrical characteristics 2 electrical characteristics (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 100 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on- resistance v gs = 12 v; i d = 17 a 0.060 0.075 table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1 mhz 3710 510 204 4640 635 255 5570 760 306 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 50 v, i d = 34 a, v gs =12 v 130 14 32 162 18 40 194 22 48 nc nc nc r g (1) 1. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.5 table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 50 v, i d = 17 a, r g = 4.7 , v gs = 12 v 15 19 68 34 24 31 129 46 33 43 190 58 ns ns ns ns electrical characteristics strh40p10 6/18 docid18354 rev 13 table 8. pre-irradiation source drain diode (1) 1. refer to the figure 16 . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 34 136 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 30 a, v gs = 0 1.1 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 25 c 276 345 4.1 316 414 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 150 c 473 7.1 133 ns c a docid18354 rev 13 7/18 strh40p10 radiation characteristics 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested (using the to-3 package) for total ionizing dose according to the escc 22900 specification, window 1) and single event effect according to the mil-std-750e tm1080 up to a fluency level of 3e+5 ions/cm2. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: from +15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , tab le 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 100 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 12 v v gs = -12 v 1.5 -1.5 a bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma +5% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma +150% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 20 a -4% / +35% table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. parameter not measured after irradiation but guaranteed by the results obtained during the evaluation phase that proves this parameter is directly correlated to the v gs(th) shift. symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 50 v, i ds = 20 a -15% / +5% nc q gs gate-source charge -5% / +200% q gd gate-drain charge -10% / +100% radiation characteristics strh40p10 8/18 docid18354 rev 13 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. ? segr test: the gate current is monitored every 200 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = 2 v @v gs = 5 v @v gs = 10 v @v gs = 15 v kr 32 768 94 - -60 - - - 756 92 - - - - -20 cu 28 285 43 -100 - -60 - - xe 60 1217 89 - -30 - - - docid18354 rev 13 9/18 strh40p10 radiation characteristics figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9 ' 6 9 ' 6 p d [ 9 * 6 9 & |