V6WL45C www.vishay.com vishay general semiconductor re vi si on : 02- aug - 1 3 1 d o cu ment number: 89968 for technical questions with in you r r e gion: dio d es am er ic as @vi sha y . co m , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual trench mos barrier schottky rectifier ultra low v f = 0.34 v at i f = 3 a feat ure s ? t ren c h mos sc hottky tec hnology ? i deal for automated p l acement ? l ow forward voltage drop , low power losses ? h i g h e f f i ci enc y opera t ion ? m eet s msl level 1 , per j-std- 020 , lf maximum p e ak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typica l ap plic ations for u s e in high f r eque ncy dc/d c conve r ters, switc h ing power supplies, freewheelin g diodes, o r -ing diode, and reverse battery protection. mec h an ic al da ta case: to- 252 (d- pak) ? mol d i n g compound mee t s u l 94 v-0 fl ammabili ty ra ting ba se p/n- m3 - ha logen -fr ee, rohs- c ompliant, an d commercial grade ter m i n als : m a tte t i n plate d l eads, sol d e r able pe r j-std- 002 a n d jesd 22- b10 2 ? m3 suffix m e ets jesd 2 01 class 1a whis ker test polarity : as marked primar y c h a r ac ter i st ics i f(a v ) 2 x 3 a v rrm 45 v i fs m 80 a v f at i f = 3 a ( t a = 125 c ) 0.3 4 v t j max. 150 c package t o-252 (d-pak) dio d e v a ria t io n s i n gl e t o-252 (d-p ak) a k heatsink a V6WL45C a a k tmbs ? maximum ratings (t a = 25 c u n less ot her w ise not e d ) p a rameter s ymbol v 6wl45c un it maximu m repetitive pe ak re ve rs e v ol t a ge v rrm 45 v maxim u m ave r ag e fo r w ar d re ctif ied cur r e n t ? (f ig . 1) per device i f(a v ) 6 a per diode 3 p e ak fo rwa r d s u rg e c u rr ent 8. 3 ms single ha lf sine -wav e supe ri m p os ed o n ra ted load per diode i fs m 80 a ope r a t ing j uncti on and s t or ag e tem p er atur e r a ng e t j , t st g - 40 to + 150 c http://
V6WL45C www.vishay.com vishay general semiconductor re vi si on : 02- aug - 1 3 2 d o cu ment number: 89968 for technical questions with in you r r e gion: dio d es am er ic as @vi sha y . co m , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 no t e s (1 ) pulse test: 300 s pulse width, 1 % duty cycle (2 ) pulse tes t : p u ls e width ? 5 m s no t e s (1 ) the he at g e ner a ted must be le ss than the thermal co nductivity from junc tion-to-ambient: dp d /dt j < 1/r ? ja (2 ) fr ee ai r, wi tho u t hea t si nk rat i n g s an d ch ara c te ristic s cu rves (t a = 25 c unless otherwise noted ) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode elect r ical ch ar act e ristics (t a = 25 c u n le ss ot he rwise not e d) p a rameter t est con d itions s y mbo l t yp. max. un it i n sta n taneo u s f o r w ar d vo ltag e pe r di ode i f = 3 a t a = 25 c v f (1) 0. 43 0.52 v t a = 125 c 0. 34 0.43 rev e rs e c u rr ent pe r di ode v r = 45 v t a = 25 c i r (2) - 1000 a t a = 125 c 8 1 5 m a the r ma l c h ar act eristics (t a = 25 c un less oth er wise not e d ) p a ramet e r s y mbol V6WL45C uni t t y pi ca l ther ma l r e si sta n ce per diode r ? jc 3.6 c / w per device 1.8 per device r ? ja (1) (2) 65 or der i n g info rmat io n (exa mple ) p r eferred p/ n u nit wei g h t (g ) package co de b a s e q u anti t y d e li very m o de v6wl 45c-m3/i 0.38 i 2500/reel 13" diam eter plastic tape and reel 0 1 2 3 4 5 6 7 0 2 5 50 75 100 125 150 a v erag e f o rward rectified c u rrent (a ) ca s e temperature ( c) t a ,r t h ja =65 o c/ w rth ja =rth jc =1. 8 o c/ w 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 .5 1 1 .5 2 2 .5 3 3 .5 av erage power lo ss (w) a v erag e f o rward current ( a ) d = 0.1 d = 0 . 2 d = 0 . 3 d = 0 . 5 d = 1 . 0 d = 0.8 d = t p /t t t p
V6WL45C www.vishay.com vishay general semiconductor re vi si on : 02- aug - 1 3 3 d o cu ment number: 89968 for technical questions with in you r r e gion: dio d es am er ic as @vi sha y . co m , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 f i g. 3 - t y pi cal ins t antane ous f o r w a r d char ac ter i s t ics pe r d i ode fig. 4 - typical reverse characteristics per diode fi g. 5 - ty pic a l junc ti on ca pa ci tanc e per d i o d e fi g. 6 - t y pic a l tr an si ent t h e r m a l im pe danc e p e r d e v i c e 0.1 1 10 100 0.1 0.2 0.3 0.4 0 .5 0.6 0 .7 0.8 0 .9 in s tantaneou s forw ard current (a) in s tantaneo u s f o r ward vo ltag e (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.001 0.01 0.1 1 10 100 20 30 40 50 60 70 80 90 100 in s tantaneo u s rev e r s e current (ma) p ercent o f rated p eak rev er s e vo ltag e (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 10 100 1000 10 000 0.1 1 10 junctio n capacitance (pf ) rev er s e vo ltag e (v) t j = 2 5 c f = 1.0 m h z v s i g = 50 mv p - p 0.1 1 10 0.01 0.1 1 10 100 tra n s ient t h ermal impedance ( c/w) t - p ul s e duration ( s ) junction to ca s e
V6WL45C www.vishay.com vishay general semiconductor re vi si on : 02- aug - 1 3 4 d o cu ment number: 89968 for technical questions with in you r r e gion: dio d es am er ic as @vi sha y . co m , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 pac k a g e outline dime nsion s in inches (millimeters ) no t e ? conforms to jedec to-252 vari ation aa except dimension d s y mbo l in ches m i lli met e rs mi n . ma x . mi n. m a x. a 0.086 0.094 2.19 2.38 a1 - 0 .005 - 0 .13 b 0.025 0.035 0.64 0.89 b2 0.033 0.045 0.84 1.14 b3 0.205 0.215 5.21 5.46 c 0.018 0.024 0.46 0.61 d 0.235 0.250 5.97 6.22 d 1 0.205 - 5.21 - e 0.250 0.265 6.35 6.73 e1 0.190 - 4 .83 - e 0 .090 b s c. 2.29 b s c. h 0.380 0.410 9.65 10.41 l 0.055 0.070 1.40 1.78 l2 0.020 b s c. 0.51 b s c. l3 0.035 0.050 0.89 1.27 l4 0.025 0.039 0.64 1.01 ? 0 8 0 8 d l3 l4 b3 b2 b 1.55 mm ref . e to-252 (d-p ak) a c h a1 c e s ee detail a - a - 0.002 0.05 mm " e1 d1 l2 l 0.004 0.1 mm " mountin g pad layout in inche s (millimeter s ) 0.244 (6.2) min. 0.256 (6.5) min. 0.094 (2.4) min. 0.051 (1.3) min. 0.39 (9.9) 0.488 (12.4) 0.086 (2.19) 0.094 (2.39)
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