2DB1182Q document number: ds35651 rev. 3 - 2 1 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q 32v pnp medium power transistor in to252 features ? bv ceo > - 32 v ? i c = - 2a high c ontinuous collector c urrent ? i c m = - 3a p eak pulse c urrent ? epitaxial planar die construction ? low collector - emitter saturation voltage ? ideal for medium power switching or amplification applications ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: to252 (dpak) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin plated leads, solderable per mil - std - 202, method 208 ? weight: 0.34 grams ( approximate ) ordering information (note 4) product compliance marking reel s ize (inches) tape w idth (mm) quantity per r eel 2DB1182Q - 13 aec - q101 2DB1182Q 13 16 2,500 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information 2DB1182Q = product type marking code = manufacturers code marking yyww = date code marking yy = last digit of year, (ex: 14 = 2014) ww = week code 01 - 52 top view device schematic pin out configuration top view to252 (dpak) yyww 2DB1182Q e3 c e b c e b
2DB1182Q document number: ds35651 rev. 3 - 2 2 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 40 v collector - emitter voltage v ceo - 32 v emitter - base voltage v ebo - 5 v continuous collector current i c - 2 a peak pulse collector current i cm - 3 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 1.2 w power dissipation @ t l = +25c (note 6) p d 15 w thermal resistance, junction to ambient (note 5) r j a 104 c/w thermal resistance, junction to lead (note 6) r jl j , t stg - 55 to +150 c esd ratings (note 7) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c note: 5. for a device mounted with the exposed collector pad on minimum recommended pad (mrp) layout 1oz copper that is on a single - sided 1.6mm fr4 pcb; device is measured under still air conditions whilst operating in a steady - state. 6. thermal resistance from junction to solder - point (on the exposed collector pad). 7. refer to jedec specification jesd22 - a114 and jesd22 - a115. thermal characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , pulse duration time (s) 1 figure 1 transient thermal response 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 110c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9
2DB1182Q document number: ds35651 rev. 3 - 2 3 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) collector - base breakdown voltage bv cbo - 40 ? ? c = - 50 ? e = 0 collector - emitter breakdown voltage bv ceo - 32 ? ? c = - 1ma, i b = 0 emitter - base breakdown voltage bv ebo - 5 ? ? e = - 50 ? c = 0 collector cutoff current i cbo ? ? ? cb = - 2 0v, i e = 0 emitter cutoff current i ebo ? ? ? eb = - 4v, i c = 0 on characteristics (note 8 ) collector - emitter saturation voltage v ce(sat) ? ? c = - 2a, i b = - 0.2a dc current gain h fe 120 ? ? ce = - 3v, i c = - 0.5a small signal characteristics current gain - bandwidth product f t ? ? ce = - 5v, i c = - 0.1a, f = 30mhz output capacitance c obo ? ? cb = - 10v, f = 1mhz turn - on time t on ? ? cc = 30v i cc = 150ma i b1 = - i b2 = 15ma delay time t d ? ? r ? ? off ? ? s ? ? f ? ? note: 8 . measured under pulsed conditions. pulse width = 300 ? s . duty cycle ? ? 2% . typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 0 200 400 600 800 1,000 0.1 1 10 figure 2 typical collector current vs. collector-emitter voltage -v , collector-emitter voltage (v) ce - i , c o l l e c t o r c u r r e n t ( m a ) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 3 typical dc current gain vs. collector current h , d c c u r r e n t g a i n f e t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a v = -3v ce
2DB1182Q document number: ds35651 rev. 3 - 2 4 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q 0 0.1 0.2 0.3 0.4 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 4 typical collector-emitter saturation voltage vs. collector current - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) c e ( s a t ) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a i /i = 10 cb 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 figure 6 typical base-emitter saturation voltage vs. collector current -i , collector current (a) c - v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a i /i = 10 cb 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 90 100 i , collector current (ma) c figure 8 typical gain-bandwidth product vs. collector current f , g a i n - b a n d w i d t h p r o d u c t ( m h z ) t v = -5v ce f = 30mhz 10 100 1,000 0.1 1 10 100 v , reverse voltage (v) r figure 7 typical capacitance characteristics c a p a c i t a n c e ( p f ) c ibo c obo f = 1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) figure 5 typical base-emitter turn-on voltage vs. collector current c - v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -3v ce
2DB1182Q document number: ds35651 rev. 3 - 2 5 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm b3 e l3 d l4 b2(2x) b(3x) e c2 a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
2DB1182Q document number: ds35651 rev. 3 - 2 6 of 6 www.diodes.com november 2014 ? diodes incorporated 2DB1182Q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significa nt injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cus tomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devi ces or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirement s concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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