71112 tkim/90308pe tiim tc-00001558 no. a1170-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 EMH2408 n-channel power mosfet 20v, 4a, 45m , dual emh8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? the EMH2408 incorporates a n-channel mosfet that feature low on-resistance and ultrahigh-speed switching, thereby enabling high-density mounting ? 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 4a drain current (pulse) i dp pw 10 s, duty cycle 1% 16 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7045-006 ordering number : ena1170a product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 87 6 5 12 3 4 tl lh lot no. 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 EMH2408-tl-h
EMH2408 no. a1170-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds = 2 0v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d = 2 a 2.0 3.4 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 34 45 m r ds (on)2 i d =1a, v gs =2.5v 49 67 m r ds (on)3 i d =0.5a, v gs =1.8v 74 115 m input capacitance ciss v ds =10v, f=1mhz 345 pf output capacitance coss 67 pf reverse transfer capacitance crss 52 pf turn-on delay time t d (on) see speci ed test circuit. 9.2 ns rise time t r 60 ns turn-off delay time t d (off) 30 ns fall time t f 38 ns total gate charge qg v ds =10v, v gs =4.5v, i d =4a 4.7 nc gate-to-source charge qgs 0.65 nc gate-to-drain ?miller? charge qgd 1.6 nc diode forward voltage v sd i s =4a, v gs =0v 0.8 1.2 v switching time test circuit ordering information device package shipping memo EMH2408-tl-h emh8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =5 EMH2408 v dd =10v v out v in 4.5v 0v v in
EMH2408 no. a1170-3/7 gate-to-source voltage, v gs -- v r ds (on) -- v gs drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m it13500 0 0 4.0 2.0 2.5 3.0 3.5 1.0 0.7 0.8 0.9 0.5 0.1 0.2 0.3 0.4 0.6 it13499 1.5 1.0 0.5 4.5v 1.5v v gs =1.2v 0 0 5.0 2.0 1.0 0.5 1.5 2.5 1.5 0.5 3.0 4.0 4.5 3.5 2.0 1.0 v ds =10v 25 c --25 c ta=75 c 2.0v 2.5v 8.0v 160 8 it13501 110 0 20 10 30 40 50 60 70 80 90 100 it13502 110 100 0 it13503 0.01 0.1 it13504 0.1 0.3 0.5 1.1 0.7 0.9 0.01 0.1 7 5 3 2 7 5 3 2 2 1.0 7 5 3 02467 135 ta=25 c i d =0.5a 4a --60 --40 --20 0 20 40 80 120 60 100 140 80 90 70 60 50 40 30 10 20 0.1 23 57 2 1.0 357 2357 1.0 7 5 3 2 7 5 3 2 v ds =10v ta= --25 c 75 c 25 c --25 c 25 c ta=75 c v gs =0v v gs =1.8v, i d =0.5a 0.01 0.1 23 5 7 2 1.0 10 35 77 2 3 10 7 5 2 2 3 5 2 3 100 7 5 it13505 046 21214 810 161820 2 7 5 3 7 5 it13506 100 1000 2 3 f=1mhz v dd =10v v gs =4.5v t d (off) t r t f t d (on) ciss crss coss 35 1.8v 1a v gs =2.5v, i d =1a v gs =4.5v, i d =4a | y fs | -- i d forward transfer admittance, | y fs | -- s
EMH2408 no. a1170-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg drain-to-source voltage, v ds -- v drain current, i d -- a a s o ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 it13509 0.8 1.2 0.2 0.6 1.0 1.4 total dissipation 1unit when mounted on ceramic substrate (900mm 2 ? 0.8mm) it13508 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 3 5 7 10 0.01 0.1 0.01 57 23 2 1.0 57 32 0 0 5.0 1.0 1.5 0.5 4.5 it13507 2.5 2.0 4.0 3.0 3.5 4.5 1.0 0.5 1.5 2.0 2.5 3.5 3.0 4.0 v ds =10v i d =4a 100 s 1ms 10ms 100ms operation in this area is limited by r ds (on). i dp =16a i d =4a 10 57 323 pw 10 s dc operation (ta=25 c ) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit
EMH2408 no. a1170-5/7 embossed taping speci cation EMH2408-tl-h
EMH2408 no. a1170-6/7 outline drawing land pattern example EMH2408-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9
EMH2408 ps no. a1170-7/7 note on usage : since the EMH2408 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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