vishay IL755B document number 83642 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 1 i179038 1 2 3 6 5 4 c e a/c c/a nc nc optocoupler, photodarlington output, ac input, high gain features ?bv ceo > 60 v isolation test voltage, 5300 v rms ac or polarity insensitive inputs no base connection high isolation resistance, 10 12 ? low coupling capacitance standard plastic dip package agency approvals ul file #e52744 system code h or j din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60965 fimko description the IL755B is a bidirectional input, optically coupled isolator consisting of two gallium arsenide infrared emitters and a silicon photodarlington sensor. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output part remarks IL755B-1 ctr > 750 %, dip-6 IL755B-2 ctr > 1000 %, dip-6 parameter test condition symbol value unit forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 55 c 1.33 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 60 v emitter-collector breakdown voltage bv eco 12 v power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c
www.vishay.com 2 document number 83642 rev. 1.3, 22-apr-04 vishay IL755B vishay semiconductors coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input 1) indicates jedec registered data. output coupler current transfer ratio parameter test condition symbol value unit isolation test voltage (pk) t = 1.0 sec. v iso 5300 v rms dissipation at 25 c 250 mw derate linearly from 25 c 3.3 mw/c creepage 7mm clearance 7mm isolation resistance t amb = 25 c r io 10 12 ? t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c t sld 10 sec. parameter test condition symbol min ty p. max unit forward voltage 1) i f = 10 ma v f 1.25 1.5 v parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma, i f = 0 bv ceo 60 75 v collector-emitter leakage current v ce = 10 v, i f = 0 i ceo 1.0 100 na parameter test condition symbol min ty p. max unit saturation voltage, collector- emitter i c = 10 ma, i f = 10 ma v cesat 1.0 v parameter test condition part symbol min ty p. max unit current transfer ratio v ce = 5.0 v, i f = 2.0 ma IL755B-1 ctr 750 % IL755B-2 ctr 1000 %
vishay IL755B document number 83642 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 3 switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time v cc = 10 v, i f = 2.0 ma, r l = 100 ? t on 200 s turn-off time v cc = 10 v, i f = 2.0 ma, r l = 100 ? t off 200 s fig. 1 led forward current vs.forward voltage fig. 2 normalized non-saturated and saturated ctr ce vs. led current iIL755B_01 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 60 40 20 0 -20 -40 -60 ?55c v f - led forward voltage - v i f - led forward current - ma 85c 25c iIL755B_02 .1 1 10 100 if - led current - ma nctrce - normalized ctrce 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vce=1v vce=5v normalized to: ta = 25c vce=5v if = 1 ma fig. 3 normalized non-saturated and saturated ctr ce vs. led current fig. 4 normalized non-saturated and saturated i ce vs. led current iIL755B_03 100 10 1 .1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 vce=1v vce=5v if - led current - ma nctrce - normalized ctrce normalized to: ta=25c vce=5v if = 2 ma iIL755B_04 100 1 .1 .01 .1 1 10 100 vce=1v vce=5v if - led current - ma nice - normalized ice ta = 25c if = 2 ma vce=5v normalized to: 10
www.vishay.com 4 document number 83642 rev. 1.3, 22-apr-04 vishay IL755B vishay semiconductors fig. 5 normalized non-saturated and saturated collector-emitter current vs. led current fig. 6 low to high propagation delay vs. collector load resistance and led current fig. 7 high to low propagation delay vs. collector load resistance and led current iIL755B_05 100 1 .1 .001 .01 .1 1 10 vce=1v vce=5v if - led current - ma nice - normalized ice ta = 25c if = 10 ma vce=5v normalized to: 10 iIL755B_06 0 5 10 15 20 0 20 40 60 80 ta = 25c, vcc = 5v vth = 1.5 v 220 ? ? 470 ? if - led current - ma tplh - low/high propagation delay - s 100 ? 1.0 k ? iIL755B_07 0 5 10 15 20 0 5 10 15 20 100 ? 1k ? if - led current - ma tphl - high/low propagation delay - s ta=25c vcc = 5 v vth = 1.5 v fig. 8 switching waveform fig. 9 normalized non-saturated and saturated ctr ce vs. led current iIL755B_08 i f t r v o t d t s t f t phl t plh v th =1.5 v iIL755B_09 i f =2 ma v o v cc =10 v r l f=10 khz, df=50%
vishay IL755B document number 83642 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3?9 .300?.347 (7.62?8.81) 4 typ. iso method a
www.vishay.com 6 document number 83642 rev. 1.3, 22-apr-04 vishay IL755B vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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