cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 1/ 9 MTN9240J3 c y s t ek product s pecification n-channel enhancement mode power mosfet MTN9240J3 features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline ordering information device package shipping MTN9240J3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel MTN9240J3 t o -252(dp ak) g gate d drain s source bv dss 100v i d 33a r ds(on) @v gs =10v, i d =25a 36m (typ) r ds(on) @v gs =5v, i d =25a 38m (typ) r ds(on) @v gs =4.5v, i d =25a 39m (typ) g d s environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name http://
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 2/ 9 MTN9240J3 c y s t ek product s pecification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source v o ltage v ds 100 gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v 33 continuous drain current @ t c =100 c, v gs =10v i d 23 pulsed drain current (note 1) i dm 90 avalanche current i as 32 a avalanche energy @ l=0.3mh, i d =32a, r g =25 e as 154 repetitive avalanche energy@ l=0.05mh (note 2) e ar 9 mj total power dissipation @ t c =25 115 total power dissipation @ t c =100 pd 57.5 w operating junction and storage temp erature range tj, tstg -55~+175 c not e : 1. pul s e wi dt h l i m i t e d by m a xim u m junct i o n t e m p er at ure. 2. dut y cycle 1% . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.3 thermal resistance, junction-to-ambient, max r th,j-a 50 (note) thermal resistance, junction-to-ambient, max r th,j-a 110 c/w note : when mounted on the minimu m pad size recommended (pcb mount). characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0v, i d =250 a v gs(th) 1 1.4 2 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =100v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 36 45 v gs =10v, i d =25a - 38 45 v gs =5v, i d =25a *r ds(o n) - 39 50 m v gs =4.5v, i d =25a *g fs - 24 - s v ds =10v, i d =20a dynamic *qg - 21 - *qgs - 3 - *qgd - 10 - nc v ds =80v, i d =25a, v gs =10v
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 3/ 9 MTN9240J3 c y s t ek product s pecification *t d(on) - 11 - *tr - 34 - *t d(off) - 62 - v ds =50v, i d =1a, v gs =10v, r gs =6 ns *t f - 32 - ciss - 1180 - coss - 114 - crss - 60 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 33 *i sm - - 90 a *v sd - 0.88 1.2 v i f =25a, v gs =0v *trr - 56 - ns *qrr - 230 - nc i f =25a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 4/ 9 MTN9240J3 c y s t ek product s pecification typical characteristics ty p i cal o u t p u t c h a r act er is tic s 0 10 20 30 40 50 60 70 80 90 02 4 6 8 1 0 brekdown voltage vs ambient temperature 0. 4 0. 6 0. 8 1 1. 2 1. 4 - 60 - 20 20 60 100 140 1 80 t j , j unc t i o n t e m pe r a t ur e ( c ) bv ds s , no rm a l i z e d dra i n - s o u rc e b r e a k dow n v o l t a ge i d =250 a, v gs =0v v ds , d r ain - s o u r ce v o l t ag e( v ) i d , drain current(a) 10 v 9v 8v 7v 6v 5v v gs =3v v gs =2v v gs =4v s ta t ic d r a in - s o u r c e o n - s t a te r e s is ta n c e v s d r a i n c u r r e n t 10 100 1 000 10 000 0. 01 0. 1 1 10 1 00 i d , d r a i n c u r r e nt ( a ) r ds ( o n ) , s t a t i c d ra i n -s o u rc e o n - s t a t e r e s i s t an ce ( m ) v gs =4.5v v gs =2.5v v gs =3v v gs =10v r e v e r s e d r ai n c u r r e n t v s s o u r ce- d r ain v o lt ag e 0.2 0. 4 0. 6 0. 8 1 1. 2 02 46 8 1 i dr , r e ve r s e d r a i n c ur r e nt ( a ) v sd , s our c e - d r a i n v ol t a g e ( v ) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 02 4 6 8 1 0 d r ai n - s o u r ce o n - s t at e r es i s t an c e v s j u n c t i o n t em p ear t u r e 0 0. 5 1 1. 5 2 2. 5 3 - 60 - 20 2 0 6 0 1 00 1 40 180 tj , j u n c t i o n te mp e r a t u r e ( c ) r d s ( on) , n o r m ali z e d s t a ti c d r ain - s o u r c e on - s t a te r e s is ta n c e v gs =10v, i d =25a v gs , ga te - s o u r c e vo lta g e ( v) r ds(on) , static drain-source on- state resistance(m) i d =25a
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 5/ 9 MTN9240J3 c y s t ek product s pecification typical characteristics(cont.) t h r e s hol d v ol t a ge vs j u nc t i on t e m pe a r t ur e 0.4 0. 6 0. 8 1 1. 2 1. 4 - 60 - 20 20 6 0 1 00 1 40 180 t j , j unc t i o n t e m pe r a t ur e ( c ) v gs ( t h ) , n o r m al ized t h r e s h o l d v o lt ag e i d =250 a i d =1ma ca pa c i t a nc e v s d ra i n -t o-s o urc e v ol t a ge 10 10 0 100 0 10000 0 . 1 1 10 100 v ds , d r a i n- s o ur c e v ol t a g e ( v ) c a p a c i t a n c e ---(pf ) c oss ciss crss f or w a r d t r a ns f e r a dm i t t a nc e vs d r a i n c ur r e nt 0.01 0. 1 1 10 100 0. 01 0. 1 1 10 1 00 i d , dr a i n c u r r e n t ( a) g fs , f o r w ar d tr a n s f er a d m i t t a n c e v ds = 10v pulsed ta=25c g a t e c h a r g e c h ar a c te r i s t ics 0 2 4 6 8 10 0 5 10 15 20 2 5 qg , t o ta l ga te c h a r g e ( n c ) v gs , g at e - s o u r ce v o l t ag e( v ) i d =25a v ds =20v v ds =50v v ds =80v m a xi m u m s a fe o pe ra t i ng a re a 0.1 1 10 100 0. 1 1 10 1 00 10 00 v ds , d r a i n - s o u r ce v o lt ag e( v ) i d , d r ai n c u r r en t ( a ) r ds(on) limited dc 10ms 1ms 100 s 10 s t c = 25 c , t j = 175 c v gs =1 0 v , r jc =1 . 3 c / w single pulse 100ms m a x i mu m d ra i n c u rre n t v s c a s e t e m p e ra t u re 0 5 10 15 20 25 30 35 40 25 50 75 1 00 12 5 150 1 75 200 t c , c a s e t e m pe r a t u re ( c ) i d , m a x i mu m d r a i n c u rre n t ( a )
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 6/ 9 MTN9240J3 c y s t ek product s pecification typical characteristics(cont.) t y p i c a l t ra n s fe r cha r a c t e ri s t i c s 0 10 20 30 40 50 60 70 80 90 100 02 46 8 1 0 v gs , g ate- s o u r c e v o l t ag e( v ) i d , dr a i n c u r r e n t ( a) v ds =10v power derating curve 0 25 50 75 100 125 0 25 50 75 100 125 150 1 75 20 0 t c , c a s e t e m p e ra t u r e ( ) p d , p o we r dis s i p a tio n ( w ) t r a ns i e nt t he r m a l r e s pons e c u r ve s 0.01 0. 1 1 10 1. e - 05 1. e - 04 1 . e - 0 3 1. e - 02 1 . e - 01 1 . e + 00 1. e + 0 1 t 1 , s q u a r e w a v e p u ls e d u r a tio n ( s ) z jc ( t ) , t he r m a l r e s pon s e single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1. z jc (t )= 1 . 3 c / w m a x . 2 . d u ty fa c to r , d =t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 7/ 9 MTN9240J3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 8/ 9 MTN9240J3 c y s t ek product s pecification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow pb-free assembly profile feature sn-pb eutectic assembly average ramp-up rate 3 c/second max. 3 c/second max. (tsmax to tp) preheat 100 c 150 c ? temperature min(t s min) ? temperature max(t s max) 150 c 200 c ? time(ts min to ts max ) 60-120 seconds 60-180 seconds time maintained above: ? temperature (t l ) 183 c 217 c ? time (t l ) 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c574 j3 issued date : 20 12.08.17 revised date : 2 013.12.26 page no. : 9/ 9 MTN9240J3 c y s t ek product s pecification to-252 dimension marking: s t yle: pin 1.gate 2.drai n 3.source 4. drain 3-l ead t o -2 52 plasti c surface mount packag e cys t ek pa ckage code: j3 device name date c ode 9240 1 2 3 4 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
