p-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm2070pd apm2070p handling code temp. range package code package code d : so t-89 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : orginal device apm2070p d : apm2070p xxxxx xxxxx - date code lead free code pin description ordering and marking information features applications absolute maximum ratings (t a = 25 c unless otherwise noted) ? -20v/-3a , r ds(on) =50m ? (typ.) @ v gs =-4.5v r ds(on) =70m ? (typ.) @ v gs =-2.5v ? ? ? ? ? reliable and rugged ? ? ? ? ? sot-89 package ? power management in notebook computer , portable equipment and battery powered systems. symbol parameter rating unit v dss drain-source voltage -20 v gss gate-source voltage 12 v i d maximum drain current ? continuous -3 i dm maximum pulsed drain current (pulse width 300 s) -12 a p-channel mosfet gd s 123 g s d top view of sot-89
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 2 apm2070pd notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) apm2070p symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =-250 a -20 v i dss zero gate voltage drain current v ds =-16v , v gs =0v -1 a v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -0.6 -0.75 -1 v i gss gate leakage current v gs =12v , v ds =0v 100 na v gs =-4.5v , i ds =-3a 50 70 r ds(on) a drain-source on-state resistance v gs =-2.5v , i ds =-1.5a 70 100 m ? v sd a diode forward voltage i s =-1a , v gs =0v -0.7 -1.3 v dynamic b q g total gate charge 17.4 23 q gs gate-source charge 2.7 q gd gate-drain charge v ds =-10v , i ds =-3a v gs =-4.5v 3.8 nc t d(on) turn-on delay time 12 21 t r turn-on rise time 25 42 t d(off) turn-off delay time 52 85 t f turn-off fall time v dd =-10v , i ds =-3a , v gen =-4.5v , r g =6 ? 18 32 ns c iss input capacitance 1118 c oss output capacitance 293 c rss reverse transfer capacitance v gs =0v v ds =-15v fre q uenc y =1.0mhz 231 pf electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter rating unit t a =25 c 1.4 p d maximum power dissipation t a =100 c 0.5 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja thermal resistance ? junction to ambient 85 c/w
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 3 apm2070pd typical characteristics -i d- drain current (a) transfer characteristics -v gs - gate-to-source voltage (v) threshold voltage vs. junction temperature tj - junction temperature (c) -v gs(th)- threshold voltage (normalized) r ds(on) -on-resistance ( ? ) on-resistance vs. drain current -i d - drain current (a) output characteristics -i d -drain current (a) -v ds - drain-to-source voltage (v) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 012345678910 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 -v gs =1.5v -v gs =2v -v gs =3,4,5,6,7,8,9,10v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 t j =125 o c t j =25 o c t j =-55 o c 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 -v gs =4.5v -v gs =2.5v
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 4 apm2070pd -50 -25 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 r on @tj = 25 c : 50m ? -v gs = 4.5v -i ds = 3a typical characteristics (cont.) r ds(on) -on-resistance (normalized) on-resistance vs. junction temperature t j - junction temperature (c) -v ds - drain-to-source voltage (v) capacitance capacitance (pf) -v gs - gate-to-source voltage (v) r ds(on) -on-resistance ( ? ) on-resistance vs. gate-to-source voltage gate charge q g - total-gate charge (nc) -v gs -gate-source voltage (v) 048121620 0 0 200 400 600 800 1000 1200 1400 1600 1800 frequency=1mhz crss coss ciss 012345678910 0.030 0.036 0.042 0.048 0.054 0.060 0.066 0.072 0.078 0.084 0.090 -i d = 3a 0 4 8 121620 0 1 2 3 4 5 -v ds = 10 v -i ds = 3 a
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 5 apm2070pd typical characteristics (cont.) square wave pulse duration (sec) source-drain diode forward voltage -i s -source current (a) -v sd -source-to-drain voltage (v) normalized effective transient thermal impedance normalized thermal transient impedence, junction to ambient single pulse power power (w) time (sec) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 t j =150 o c t j =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 0 40 80 120 160 300 1e-4 1e-3 0.01 0.1 1 10 100 300 0.01 0.1 1 2 d=0.01 p dm t 1 t 2 d=0.02 d=0.05 d=0.1 d=0.2 duty cycle=0.5 single pulse 1.duty cycle, d= t1/t2 2.per unit base=r thja =85 o c/w 3.t jm -t a =p dm z thja 4.surface mounted
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 6 apm2070pd packaging information sot-89 (reference eiaj ed-7500a reg stration sc-62) d d1 e b1 e1 b 12 3 l h e c a a a millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0.090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 10 10
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 7 apm2070pd physical specifications terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. reflow condition (ir/convection or vpr reflow) reference jedec standard j-std-020a april 1999 classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max. temperature maintained above 183 c 60 ~ 150 seconds time within 5 c of actual peak temperature 10 ~ 20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215~ 219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c pre-heat temperature 183 c peak temperature time temperature
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 8 apm2070pd carrier tape & reel dimensions a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program a pp lication a b c j t1 t2 w p e 330 3100 213 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
copyright ? anpec electronics corp. rev. a.1 - nov., 2003 www.anpec.com.tw 9 apm2070pd customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions application carrier width cover tape width devices per reel to- 252 16 13.3 2500
|
