october 2011 FDB8832 n-channel logi c level powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB8832 rev. a1 www.fairchildsemi.com 1 FDB8832 n-channel logic level powertrench ? mosfet 30v, 80a, 2.1 m features ? typ r ds(on) = 1.5m at v gs = 5v, i d = 80a ? typ q g(5) = 100nc at v gs = 5v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? rohs compliant applications ? starter / alternator systems ? electronic power steering systems ? dc-dc converters l e a d f r e e m t a e l n t i o m p e n i
FDB8832 n-channel logi c level powertrench ? mosfet FDB8832 rev. a1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 p a, v gs = 0v 30 - - v i dss zero gate voltage drain current v ds = 24v v gs = 0v - - 1 p a t j = 150 c - - 250 i gss gate to source leakage current v gs = r20v - - r10 0 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 p a 1.0 1.6 3.0 v r on) drain to source on resistance i d = 80a, v gs = 10v - 1.4 1.9 m : i d = 80a, v gs = 5v - 1.5 2.1 i d = 80a, v gs = 4.5v - 1.6 2.2 i d = 80a, v gs = 10v t j = 175 c - 2.3 3.0 dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 11400 - pf c oss output capacitance - 2140 - pf c rss reverse transfer capacitance - 1260 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 1.2 - : q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 15v i d = 80a i g = 1 . 0 m a - 204 265 nc q g(5) total gate charge at 5v v gs = 0 to 5v - 100 130 nc q g(th) threshold gate charge v gs = 0 to 1v - 10.9 14.2 nc q gs gate to source gate charge - 33 - nc q gs2 gate charge threshold to plateau - 22 - nc q gd gate to drain ?miller? charge - 43 - nc ds( mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current continuous (t c < 165 o c, v gs = 10v) 80 a drain current continuous (t c < 163 o c, v gs = 5v) 80 drain current continuous (t amb = 25 o c, v gs = 10v, with r t ja = 43 o c/w) 34 pulsed see figure 4 e as single pulse avalanche energy (note 1) 1246 mj p d power dissipation 300 w derate above 25 o c2 w / o c t j , t stg operating and storage temperature -55 to +175 o c r t jc thermal resistance, junction to case 0.5 o c/w r t ja thermal resistance, junction to ambient (note 2) 62 o c/w r t ja thermal resistance, junction to ambient, lin 2 copper pad area 43 o c/w device marking device package reel size tape width quantity FDB8832 FDB8832 to-263ab 330mm 24mm 800 units
FDB8832 n-channel logi c level powertrench ? mosfet FDB8832 rev. a1 www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 15v, i d = 80a v gs = 5v, r gs = 1.5 --155ns t d(on) turn-on delay time - 24 - ns t r turn-on rise time - 73 - ns t d(off) turn-off delay time - 54 - ns t f turn-off fall time - 38 - ns t off turn-off time - - 149 ns v sd source to drain diode voltage i sd = 75a - 0.8 1.25 v i sd = 40a - 0.8 1.0 v t rr reverse recovery time i f = 75a, di/dt = 100a/ s - 59 77 ns q rr reverse recovery charge i f = 75a, di/dt = 100a/ s - 67 87 nc notes: 1: starting t j = 25 o c, l = 0.61mh, i as = 64a, v dd = 30v, v gs = 10v. 2: pulse width = 100s.
FDB8832 n-channel logi c level powertrench ? mosfet FDB8832 rev. a1 www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 i d , drain current (a) t c , case temperature ( o c ) v gs = 10v v gs = 5v current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDB8832 n-channel logi c level powertrench ? mosfet FDB8832 rev. a1 www.fairchildsemi.com 5 figure 5. 11 0 0.1 1 10 100 1000 limited by package 60 4000 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 01234 0 50 100 150 200 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.5 1.0 1.5 0 50 100 150 200 v gs = 5v i d , drain current (a) v ds , drain to source voltage (v) v gs = 3v v gs = 3.5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max saturation characteristics figure 9. 246810 0 1 2 3 4 r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 80a v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on resistance vs junction temperature typical characteristics
FDB8832 n-channel logi c level powertrench ? mosfet FDB8832 rev. a1 www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized gate threshold voltage t j , junction temperature ( o c ) v gs = v ds i d = 250 p a normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 t j , junction temperature ( o c ) normalized drain to source breakdown voltage i d = 250 p a figure 13. 0.1 1 10 100 1000 10000 c iss c oss c rss f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage ( v ) 50 40000 capacitance vs drain to source voltage figure 14. 0 50 100 150 200 250 0 2 4 6 8 10 v dd = 12v v dd = 18v v dd = 15v i d = 80a q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
FDB8832 rev. a1 www.fairchildsemi.com 7 FDB8832 n-channel logi c level powertrench ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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