ssf11ns60 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 11 i d @ tc = 100c continuous drain current, v gs @ 10v 7 i dm pulsed drain current 44 a power dissipation 162 w p d @tc = 25c linear derating factor 1.5 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=22.5mh 281 mj i as avalanche current @ l=22.5mh 5 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 600v r ds (on) 0.36 (typ.) i d 11a to-220 marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf11ns60 series mosfet is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low r ds(on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf11ns60 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.77 /w r ja junction-to-ambient (t 10s) 62 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 0.36 0.41 v gs =10v,i d = 5.5a r ds(on) static drain-to-source on-resistance 0.88 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.46 v t j = 125 1 v ds =600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 28.41 q gs gate-to-source charge 6.64 q gd gate-to-drain("miller") charge 12.34 nc i d = 11a, v ds =480v, v gs = 10v t d(on) turn-on delay time 12.85 t r rise time 9.45 t d(off) turn-off delay time 30.40 t f fall time 6.30 ns v gs =10v, vds=300v, r l =54.5, r gen =4.7 id=5.5a c iss input capacitance 824.8 c oss output capacitance 78.06 c rss reverse transfer capacitance 2.75 pf v gs = 0v v ds = 50v ? = 600khz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 11 a i sm pulsed source current (body diode) 44 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.5 v i s =11a, v gs =0v t rr reverse recovery time 313 ns q rr reverse recovery charge 2.97 uc t j = 25c, i f =11a, di/dt = 100a/s
ssf11ns60 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.2 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c.
ssf11ns60 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.2 typical electrical and thermal characteristics figure 2. typ. gate to source cut-off voltage figure 1: power dissipation figure 3. typ. gate charge figure 4: typ. capacitances
ssf11ns60 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.2 figure 5. drain-source breakdown voltage typical electrical and thermal characteristics figure 6. drain-source on-state resistance
ssf11ns60 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.2 mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.240 2.340 2.440 0.088 0.092 0.096 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 b2 0.750 0.800 0.850 0.030 0.031 0.033 c 0.480 0.500 0.520 0.019 0.020 0.021 d 15.100 15.400 15.700 0.594 0.606 0.618 d1 8.800 8.900 9.000 0.346 0.350 0.354 d2 2.730 2.800 2.870 0.107 0.110 0.113 e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 8.700 - - 0.343 - p 3.570 3.600 3.630 0.141 0.142 0.143 p 1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 l 13.150 13.360 13.570 0.518 0.526 0.534 l1 l2 2.900 3.000 3.100 0.114 0.118 0.122 l3 1.650 1.750 1.850 0.065 0.069 0.073 l4 0.900 1.000 1.100 0.035 0.039 0.043 q 1 5 0 7 0 9 0 5 0 7 0 9 0 q 2 5 0 7 0 9 0 5 0 7 0 9 0 q 3 5 0 7 0 9 0 5 0 7 0 9 0 q 4 1 0 3 0 5 0 1 0 3 0 5 0 0.2bsc 7.35ref 0.29ref symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 5.08bsc to220 package outline dimension_gn
ssf11ns60 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.2 ordering and marking information device marking: ssf11ns60 package (available) to220 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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