v rrm = 800 v - 1000 v i f = 20 a features ? high surge capability do-5 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol fr20k(r)05 unit repetitive peak reverse voltage v rrm 800 v rms reverse voltage v rms 560 v silicon fast recover y diode ? types from 800 v to 1000 v v rrm 2. reverse polarity (r): stud is anode. fr20k05 thru fr20mr05 maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions fr20m(r)05 1000 700 dc blocking voltage v dc 800 v continuous forward current i f 20 a operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol fr20k(r)05 unit diode forward voltage 1.0 25 a 10 ma recovery time maximum reverse recovery time t rr 500 ns thermal characteristics thermal resistance, junction - case r thjc 0.6 c/w fr20m(r)05 -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm a 250 -55 to 150 reverse current i r v f v r = 800 v, t j = 25 c i f = 20 a, t j = 25 c t c 100 c conditions 250 t c = 25 c, t p = 8.3 ms 1000 20 0.6 i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 800 v, t j = 125 c v 1.0 25 10 500 www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 1
fr20k05 thru fr20mr05 www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. fr20k05 thru fr20mr05 do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 3
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