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1. product profile 1.1 general description the CLF1G0035-100P and clf1g0035s-100p are 100 w general purpose broadband gan hemts usable from dc to 3.5 ghz. [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f = 100 khz. CLF1G0035-100P; clf1g0035s-100p broadband rf power gan hemt rev. 2 ? 20 june 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 2500 100 12.8 51 2600 100 12.7 52.4 2700 100 12.3 50 2800 100 11.7 49 2900 100 11.5 49 3000 100 10.5 47 1-tone pulsed [1] 2500 100 14.2 52 2600 100 14.4 54.4 2700 100 14.1 52.5 2800 100 13.7 51.5 2900 100 13.6 51.8 3000 100 12.7 50.1 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 2500 20 ? 41.6 2600 20 ? 43 2700 20 ? 41.5 2800 20 ? 41.3 2900 20 ? 41.3 3000 20 ? 40
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 2 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 1.2 features and benefits ? frequency of operation is from dc to 3.5 ghz ? 100 w general purpose broadband rf power gan hemt ? excellent ruggedness (vswr = 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol CLF1G0035-100P (sot1228a) 1drain1 2drain2 3gate1 4gate2 5source [1] clf1g0035s-100p (sot1228b) 1drain1 2drain2 3gate1 4gate2 5source [1] ddd ddd table 4. ordering information type number package name description version CLF1G0035-100P - flanged ceramic package; 2 mounting holes; 4 leads sot1228a clf1g0035s-100p - earless flanged ceramic package; 4 leads sot1228b
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 3 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 108.6 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -36ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - 250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 1.02 k/w table 7. dc characteristics t case = 25 ? c; per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds =12ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds =12ma ? 2.4 ? 2 ? 1.6 v i dsx drain cut-off current v ds =10v; v gs =3 v - 8.8 - a g fs forward transconductance v ds =10 v; v gs =0v - 1.8 - s table 8. rf characteristics test signal: pulsed rf; f = 3000 mhz; t p = 100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 330 ma; t case =25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit ? d drain efficiency p l = 100 w - 50 - % g p power gain p l = 100 w - 14 - db rl in input return loss p l = 100 w - ? 6- db p droop(pulse) pulse droop power p l = 100 w - 0.2 - db t r rise time p l = 100 w - 5 - ns t f fall time p l = 100 w - 5 - ns
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 4 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 7. application information 7.1 demo circuit printed-circuit board (pcb) material: tmm6, ? r = 6.0, thickness = 0.635 mm, 28.35 grams copper on each side. see table 9 for list of components. fig 1. the broadband amplifier (2500 mhz to 3000 mhz) demo circuit outline table 9. list of components see figure 1 . component description value remarks c1, c10 multilayer ceramic chip capacitor 20 pf atc800a c2, c3,c4, c7 multilayer ceramic chip capacitor 1 nf atc700a c5, c8 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v c6, c9 multilayer ceramic chip capacitor 10 ? f, 5 0 v c11, c12 electrolytic capacitor 220 ? f, 5 0 v q1 transistor - CLF1G0035-100P r1 resistor 4.7 ? r2 resistor 0.01 ? lvk25r01, 2w, 1 % tolerance ddd & & 5 & & & & & & & & 5 & 4 pp pp pp &
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 5 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 7.2 application test results [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f = 100 khz. table 10. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 2500 100 12.8 51 2600 100 12.7 52.4 2700 100 12.3 50 2800 100 11.7 49 2900 100 11.5 49 3000 100 10.5 47 1-tone pulsed [1] 2500 100 14.2 52 2600 100 14.4 54.4 2700 100 14.1 52.5 2800 100 13.7 51.5 2900 100 13.6 51.8 3000 100 12.7 50.1 table 11. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 2500 20 ? 41.6 2600 20 ? 43 2700 20 ? 41.5 2800 20 ? 41.3 2900 20 ? 41.3 3000 20 ? 40
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 6 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 7.3 graphical data the following figures are measured in a broadband amplifier demo board from 2500 mhz to 3000 mhz. 7.3.1 1-tone cw rf performance v ds = 50 v; i dq = 330 ma; p l =100w. v ds = 50 v; i dq = 330 ma. (1) f = 2500 mhz (2) f = 2700 mhz (3) f = 3000 mhz fig 2. power gain and drain efficiency as function of frequency; typical values fig 3. power gain and drain efficiency as a function of output power; typical values ddd i0+] * s * s g% g% g% ' ' * s * s ' ' ddd 3 / g%p * s * s g% g% g% ' ' * s * s ' '
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 7 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 7.3.2 1-tone pulsed rf performance 7.3.3 2-tone cw performance v ds = 50 v; i dq = 330 ma; p l =100w. v ds = 50 v; i dq = 330 ma. (1) f = 2500 mhz (2) f = 2700 mhz (3) f = 3000 mhz fig 4. power gain and drain efficiency as function of frequency; typical values fig 5. power gain and drain efficiency as function of output power; typical values ddd i0+] * s * s g% g% g% ' ' * s * s ' ' ddd 3 / g%p * s * s g% g% g% ' ' * s * s ' ' ? f=100khz; v ds = 50 v; i dq = 330 ma. (1) f = 2500 mhz (2) f = 2700 mhz (3) f = 3000 mhz fig 6. third-order intermodulation distortion as a function of peak envelope power load power; typical values ddd 3 /3(3 : ,0' ,0' ,0' g%f g%f g%f
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 8 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 8. test information 8.1 ruggedness in class-ab operation the CLF1G0035-100P and clf1g0035s-100p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; p l = 100 w (cw), f = 2500 mhz. 8.2 load pull impedance information [1] measured at gate1 and gate2 [2] measured at drain1 and drain2 z s is the measured source pull impedance presented to the device. z l is the measured load pull impedance presented to the device. table 12. typical impedance measured load-pull data half device. ty pical values unless otherwise specified. i dq = 150 ma; v ds =50v. z s and z l defined in figure 7 . f z s [1] z l (maximum p l(m) ) [2] z l (maximum ? d ) [2] mhz ? ? ? 500 6.4 + 4j 9.7 + 7j 10 + 5j 1000 1.9 + 2.2j 9.1 + 12.4j 10 + 6j 2000 1.9 ? 2.9j 5 + 4.1j 6.6 + 1.4j 2500 2.1 ? 6.3j 3.6 + 0.75j 4.5 ? 0.4j 3000 2.5 ? 9j 3.9 ? 1.2j 5.8 ? 1.8j 3500 2.9 ? 14j 6.6 ? 2j 5.8 ? 3j fig 7. definition of transistor impedance ddd jdwh = 6 = / jdwh gudlq gudlq
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 9 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 8.3 packaged s-parameter data table 13. s-parameter data half device small signal; typical values unless otherwise specified; v ds = 50 v; i dq = 150 ma; z s = z l = 50 ? . f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 500 0.82686 ? 168.9 9.6028 67.238 0.01482 ? 9.5809 0.48482 ? 133.17 600 0.82717 ? 171.62 7.7589 61.123 0.013844 ? 12.463 0.52053 ? 136.01 700 0.82892 ? 173.81 6.4386 55.547 0.01282 ? 14.415 0.55589 ? 138.65 800 0.83183 ? 175.69 5.4524 50.412 0.011783 ? 15.413 0.58964 ? 141.17 900 0.83572 ? 177.39 4.6934 45.655 0.010764 ? 15.358 0.62126 ? 143.61 1000 0.84047 ? 178.98 4.096 41.233 0.0097946 ? 14.091 0.65063 ? 145.96 1100 0.84604 179.5 3.618 37.11 0.008907 ? 11.409 0.67787 ? 148.22 1200 0.85244 178 3.2306 33.257 0.0081421 ? 7.0907 0.70319 ? 150.39 1300 0.8597 176.51 2.9136 29.648 0.0075495 ? 0.99281 0.72687 ? 152.47 1400 0.86785 175.01 2.6525 26.259 0.0071873 6.7932 0.74919 ? 154.47 1500 0.87697 173.47 2.4362 23.07 0.0071125 15.766 0.77044 ? 156.39 1600 0.88715 171.88 2.2569 20.062 0.0073641 25.034 0.79086 ? 158.24 1700 0.89848 170.23 2.1083 17.22 0.007952 33.645 0.81069 ? 160.04 1800 0.90446 168.57 1.972 14.461 0.0088014 40.908 0.8252 ? 161.7 1900 0.90172 166.97 1.839 11.713 0.0098257 46.58 0.83233 ? 163.2 2000 0.89927 165.33 1.7253 9.0465 0.011062 50.849 0.83898 ? 164.63 2100 0.89713 163.64 1.6281 6.4503 0.012486 53.942 0.84528 ? 166 2200 0.89532 161.88 1.5454 3.9129 0.014088 56.092 0.85135 ? 167.32 2300 0.89386 160.04 1.4755 1.4231 0.015869 57.498 0.85727 ? 168.6 2400 0.89277 158.1 1.4171 ? 1.0309 0.01784 58.314 0.86313 ? 169.84 2500 0.89205 156.03 1.3692 ? 3.4611 0.020023 58.659 0.86899 ? 171.05 2600 0.89096 153.83 1.3297 ? 5.8933 0.022423 58.605 0.87436 ? 17 2.23 2 700 0.88445 151.58 1.2888 ? 8.4222 0.024891 58.132 0.87579 ? 173.35 2800 0.87762 149.17 1.2551 ? 10.982 0.027588 57.364 0.87715 ? 174.44 2900 0.87039 146.59 1.2281 ? 13.588 0.030547 56.329 0.87847 ? 175.5 3000 0.86268 143.8 1.2076 ? 16.259 0.033808 55.045 0.8798 ? 176.54 3100 0.85434 140.75 1.1934 ? 19.013 0.037423 53.519 0.88118 ? 177.56 3200 0.84525 137.4 1.1855 ? 21.877 0.041451 51.748 0.88265 ? 178.56 3300 0.83522 133.68 1.1839 ? 24.877 0.045967 49.721 0.88425 ? 179.53 3400 0.82403 129.52 1.1889 ? 28.05 0.051058 47.418 0.88607 179.52 3500 0.80856 125.24 1.1872 ? 31.326 0.056194 44.92 0.88556 178.56 3600 0.79077 120.6 1.1867 ? 34.765 0.061705 42.174 0.88468 177.6 3700 0.77106 115.45 1.1896 ? 38.412 0.067742 39.146 0.88406 176.66 3800 0.74926 109.7 1.1956 ? 42.297 0.074348 35.812 0.88382 175.74 3900 0.72527 103.23 1.2044 ? 46.449 0.081559 32.146 0.88412 174.82 4000 0.69912 95.917 1.2152 ? 50.902 0.089394 28.121 0.88516 173.9 4100 0.67108 87.595 1.2274 ? 55.686 0.097849 23.71 0.88717 172.98
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 10 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 4200 0.64183 78.092 1.24 ? 60.826 0.10688 18.891 0.89042 172.03 4300 0.6126 67.228 1.2515 ? 66.34 0.11639 13.65 0.89516 171.03 4400 0.58534 54.856 1.2604 ? 72.231 0.12622 7.9864 0.90159 169.95 4500 0.5628 40.93 1.2649 ? 78.48 0.13615 1.9193 0.90984 168.75 4600 0.54816 25.608 1.2633 ? 85.047 0.14588 ? 4.5074 0.91983 167.38 4700 0.54433 9.3292 1.2542 ? 91.862 0.15511 ? 11.224 0.9313 165.79 4800 0.55279 ? 7.214 1.2369 ? 98.835 0.16356 ? 18.138 0.94381 163.95 4900 0.57293 ? 23.266 1.2115 ? 105.86 0.17103 ? 25.144 0.95677 161.82 5000 0.60219 ? 38.234 1.1791 ? 112.84 0.17745 ? 32.138 0.96962 159.39 5100 0.63534 ? 51.341 1.1406 ? 119.47 0.18272 ? 38.825 0.9807 156.67 5200 0.66527 ? 61.779 1.0972 ? 125.31 0.18683 ? 44.756 0.98704 153.74 5300 0.69493 ? 71.079 1.0544 ? 130.96 0.1906 ? 50.53 0.99214 150.52 5400 0.72195 ? 78.947 1.0134 ? 136.23 0.19423 ? 55.963 0.99508 147.04 5500 0.74577 ? 85.567 0.97537 ? 141.15 0.19795 ? 61.088 0.99579 143.28 5600 0.76759 ? 91.49 0.94075 ? 146 0.20193 ? 66.161 0.99532 139.15 5700 0.78744 ? 96.798 0.90986 ? 150.8 0.20632 ? 71.236 0.99371 134.58 5800 0.80548 ? 101.57 0.88283 ? 155.64 0.21125 ? 76.374 0.99093 129.47 5900 0.82197 ? 105.86 0.85961 ? 160 .5 8 0.21682 ? 81.647 0.98694 123.72 6000 0.83722 ? 109.72 0.84 ? 165.71 0.22309 ? 87.14 0.98164 117.18 table 13. s-parameter data half device ?continued small signal; typical values unless otherwise specified; v ds = 50 v; i dq = 150 ma; z s = z l = 50 ? . f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree)
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 11 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 9. package outline fig 8. package outline sot1228a 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627$ )odqjhg/'0267fhudplfsdfndjhprxqwlqjkrohvohdgv 627$ vrwdbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +s 4 8 8 lqfkhv pd[ qrp plq f ' ) h + z z t 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv 'lphqvlrqlvphdvxuhglqfkppiurperg\ z z ) ' $ ' 8 $ + s z $ z & % h 8 t & % + z $ % e z ( f 4 ( vfdoh pp z $ % z $ %
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 12 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt fig 9. package outline sot1228b 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627% (duohvviodqjhg/'0267fhudplfsdfndjhohdgv 627% vrwebsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +4 8 8 lqfkhv pd[ qrp plq f ' ) h + z z z z 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv 'lphqvlrqlvphdvxuhglqfkppiurperg\ % $ z % 8 + z $ % z $ % z $ % h e z f ( 4 ( 8 + ' ' $ pp vfdoh )
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 13 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 10. handling information 10.1 esd sensitivity [1] classification 1b is granted to any part that passes after exposure to an esd pulse of 500 v, but fails after exposure to an esd pulse of 1000 v. 11. abbreviations 12. revision history table 14. esd sensitivity esd model class human body model (hbm); according jedec standard jesd22-a114f 1b [1] table 15. abbreviations acronym description cw continuous wave emc electromagnetic compatibility esd electrostatic discharge gan gallium nitride hemt high electron mobility transistor vswr voltage standing-wave ratio wimax worldwide interoperability for microwave access table 16. revision history document id release date data sheet status change notice supersedes CLF1G0035-100P_1g0035s-100p v.2 20130620 objective data sheet - CLF1G0035-100P_ 1g0035s-100p v.1 modifications: ? table 6 on page 3 : table has been updated. ? table 7 on page 3 : table has been updated. ? table 8 on page 3 : table has been updated. ? section 7 on page 4 : section has been updated. ? section 8 on page 8 : section has been added. CLF1G0035-100P_1g0035s-100p v.1 20121210 objective data sheet - -
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 14 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 15 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 june 2013 document identifier: CLF1G0035-100P_1g0035s-100p please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 2 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 application test results . . . . . . . . . . . . . . . . . . . 5 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3.1 1-tone cw rf performance. . . . . . . . . . . . . . . 6 7.3.2 1-tone pulsed rf performance . . . . . . . . . . . . 7 7.3.3 2-tone cw performance . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 ruggedness in class-ab operation . . . . . . . . . 8 8.2 load pull impedance information . . . . . . . . . . . 8 8.3 packaged s-parameter data. . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 handling information. . . . . . . . . . . . . . . . . . . . 13 10.1 esd sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 13 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14 contact information. . . . . . . . . . . . . . . . . . . . . 15 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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