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1. product profile 1.1 general description clf1g0035-50 and CLF1G0035S-50 are broadband general purpose 50 w amplifiers with first generation gan hemt technology from nxp. frequency of operation is from dc to 3.5 ghz. [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f=1mhz. clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt rev. 2 ? 29 january 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 150 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 50 12 64 1000 50 13 43 1500 50 13 43 2000 50 14 43 2500 50 11 48 1-tone pulsed [1] 500 50 12 65 1000 50 15 43 1500 50 15 43 2000 50 15 44 2500 50 13 49 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 275 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 10 ? 48 1000 10 ? 40 1500 10 ? 43 2000 10 ? 38 2500 10 ? 38
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 2 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 1.2 features and benefits ? frequency of operation is from dc to 3.5 ghz ? 50 w general purpose broadband rf power gan hemt ? excellent ruggedness (vswr 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol clf1g0035-50 (sot467c) 1drain 2gate 3source [1] CLF1G0035S-50 (sot467b) 1drain 2gate 3source [1] 1 2 3 3 1 2 table 4. ordering information type number package name description version clf1g0035-50 - flanged ceramic package; 2 mounting holes; 2 leads sot467c CLF1G0035S-50 - earless ceramic package; 2 leads sot467b
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 3 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 55 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -18ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - +250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 2.1 k/w table 7. dc characteristics t case = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds =12 ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds = 12 ma ? 2.4 ? 2 ? 1.3 v i dsx drain cut-off current v ds =10v; v gs =3 v - 8.8 - a g fs forward transconductance v ds = 10 v; v gs =0 v - 1.8 - s table 8. rf characteristics test signal: 1-tone cw; rf performance at v ds =50v; i dq = 150 ma; t case = 25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit f frequency 2.5 - 3 ghz ? d drain efficiency p l = 50 w - 48 - % g p power gain p l = 50 w - 11.5 - db rl in input return loss p l = 50 w - ? 5- db
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 4 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 7. application information 7.1 demo circuit fig 1. the broadband amplifier (500 mhz to 2500 mhz) demo circuit outline table 9. list of components see figure 1 and figure 2 component description value remarks a1 gan bias module v1 - nxp c1 multilayer ceramic chip ca pacitor 1.5 pf atc 600f1r5bt c3, c6 multilayer ceramic chip capacitor 1.2 pf atc 600f1r2bt c4 multilayer ceramic chip ca pacitor 5.6 pf atc 600f5r6ct c5 multilayer ceramic chip ca pacitor 2.2 pf atc 600f2r2bt c7 multilayer ceramic chip ca pacitor 0.5 pf atc 600f0r5bt c8 multilayer ceramic chip ca pacitor 20 pf atc 600f200jt c9 capacitor 1 pf to 4 pf tronser 66-0304-00004-000 c10 multilayer ceramic ch ip capacitor 10 nf generic c11 multilayer ceramic ch ip capacitor 22 pf generic c12 multilayer ceramic ch ip capacitor 1 nf generic

clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 5 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt c13 multilayer ceramic chip capacitor 100 nf generic c20 multilayer ceramic chip capacitor 1 nf atc 100b102kw c21 multilayer ceramic chip capacitor 100 pf atc 100b101jw c22, c26 multilayer ceramic chip capacitor 10 nf generic c23 multilayer cerami c chip capacitor 10 ? f tdk c5750x7s2a106m c25 multilayer cerami c chip capacitor 1 ? f generic c27 electrolytic capacitor 470 ? f panasonic eee-tk1j471am e1, e2 drain voltage connection - j1 rf in connector - j2 rf out connector - j3, p1 1 row, 3-way vertical dc connector header - l1 inductor 12.5 nh coil craft a04t l2 inductor 4 nh l3 ferrite bead - fair-rite 2743019447 q1 transistor - nxp clf1g0035-50 q2 transistor - nxp bc857b q3 transistor - nxp psmn8r2-80ys r1 resistor, 10 ? generic r2 resistor 10.0 k ? generic r3, r4 resistor 100 ? generic z1, z2, z3, z4, z5, z6 microstrip lines - table 9. list of components ?continued see figure 1 and figure 2 component description value remarks
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 6 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 7.2 application test results [1] pulsed rf; t p = 100 ? s; ? = 10 %. see table 9 for a list of components. fig 2. the broadband amplifier (500 mhz to 2500 mhz) demo circuit schematic

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!"" table 10. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 150 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 50 12 64 1000 50 13 43 1500 50 13 43 2000 50 14 43 2500 50 11 48 1-tone pulsed [1] 500 50 12 65 1000 50 15 43 1500 50 15 43 2000 50 15 44 2500 50 13 49
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 7 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt [1] 2-tone cw; ? f=1mhz. 7.3 graphical data the following figures are measured in a broadband amplifier demo board from 500 mhz to 2500 mhz. 7.3.1 1-tone cw rf performance table 11. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 275 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 10 ? 48 1000 10 ? 40 1500 10 ? 43 2000 10 ? 38 2500 10 ? 38 v ds = 50 v; i dq = 150 ma; p l =50w. v ds = 50 v; i dq = 150 ma. (1) g p at f = 500 mhz (2) g p at f = 1500 mhz (3) g p at f = 2500 mhz (4) ? d at f = 500 mhz (5) ? d at f = 1500 mhz (6) ? d at f = 2500 mhz fig 3. power gain and drain efficiency as function of frequency; typical values fig 4. power gain and drain efficiency as a function of output power; typical values

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clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 8 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 7.3.2 1-tone pulsed rf performance v ds = 50 v; i dq = 150 ma. fig 5. power gain, linear gain and gate current as function of output power; typical values

.1"0 4 .10 ."0 v ds = 50 v; i dq = 150 ma; p l =50w. ? f = 100 khz, v ds = 50 v; i dq =150ma. (1) g p at f = 500 mhz (2) g p at f = 1500 mhz (3) g p at f = 2500 mhz (4) ? d at f = 500 mhz (5) ? d at f = 1500 mhz (6) ? d at f = 2500 mhz fig 6. power gain and drain efficiency as function of frequency; typical values fig 7. power gain and drain efficiency as function of output power; typical values

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clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 9 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 7.3.3 2-tone cw performance p i = 10 dbm, v ds = 50 v; i dq = 150 ma. p i = 10 dbm, v ds = 50 v; i dq = 150 ma. fig 8. power gain as a function of frequency; typical values fig 9. input return loss as a function of frequency; typical values

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-.$+/0 5( .10 ? f=1mhz; v ds = 50 v; i dq =150ma. (1) f = 500 mhz (2) f = 1500 mhz (3) f = 2500 mhz ? f=1mhz; v ds = 50 v; i dq = 275 ma. (1) f = 500 mhz (2) f = 1500 mhz (3) f = 2500 mhz fig 10. third-order intermodulation distortion as a function of peak envelope power load power; typical values fig 11. third-order intermodulation distortion as a function of peak envelope power load power; typical values

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clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 10 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 7.4 bias module the bias module information for the gan hemt amplifier is described in application note ?an11130? 8. test information 8.1 ruggedness in class-ab operation the clf1g0035-50 and CLF1G0035S-50 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; p l =50w(cw), f=2500mhz. 8.2 load pull impedance information the measured load pull impedances are shown below. impedance reference plane defined at device leads. measurements performed with nxp test fixtures. test temperature set at 25 ? c with a cw signal. v ds = 50 v; i dq = 275 ma; p l(pep) = 10 w. (1) ? f=10 khz (2) ? f=30 khz (3) ? f = 100 khz (4) ? f = 300 khz (5) ? f=1 mhz (6) ? f=3 mhz fig 12. third-order intermodulation distortion as a function of frequency; typical values

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clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 11 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt z s is the measured source pull impedance presented to the device. z l is the measured load pull impedance presented to the device. table 12. typical impedance typical values unless otherwise specified. f z s z l (maximum p l(m) ) z l (maximum ? d ) mhz ? ? ? 500 6.4 + 4j 9.7 + 7j 10 + 5.0j 1000 1.9 + 2.2j 9. 1 + 12.4j 10 + 6.0j 2000 1.9 ? 2.9j 5 + 4.1j 6.6 + 1.4j 2500 2.1 ? 6.3j 3.6 + 0.75j 4.5 ? 0.4 j 3000 2.5 ? 9j 3.9 ? 1.2j 5.8 ? 1.8j 3500 2.9 ? 14j 6.6 ? 2j 5.8 ? 3j fig 13. definition of transistor impedance 1895( :;<87= # >9?=
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 12 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 8.3 packaged s-parameter data table 13. s-parameter small signal; v ds = 50 v; i dq = 150 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 500 0.82686 ? 168.9 9.6028 67.238 0.01482 ? 9.5809 0.48482 ? 133.17 600 0.82717 ? 171.62 7.7589 61.123 0.013844 ? 12.463 0.52053 ? 136.01 700 0.82892 ? 173.81 6.4386 55.547 0.01282 ? 14.415 0.55589 ? 138.65 800 0.83183 ? 175.69 5.4524 50.412 0.011783 ? 15.413 0.58964 ? 141.17 900 0.83572 ? 177.39 4.6934 45.655 0.010764 ? 15.358 0.62126 ? 143.61 1000 0.84047 ? 178.98 4.096 41.233 0.0097946 ? 14.091 0.65063 ? 145.96 1100 0.84604 179.5 3.618 37.11 0.008907 ? 11.409 0.67787 ? 148.22 1200 0.85244 178 3.2306 33.257 0.0081421 ? 7.0907 0.70319 ? 150.39 1300 0.8597 176.51 2.9136 29.648 0.0075495 ? 0.99281 0.72687 ? 152.47 1400 0.86785 175.01 2.6525 26.259 0.0071873 6.7932 0.74919 ? 154.47 1500 0.87697 173.47 2.4362 23.07 0.0071125 15.766 0.77044 ? 156.39 1600 0.88715 171.88 2.2569 20.062 0.0073641 25.034 0.79086 ? 158.24 1700 0.89848 170.23 2.1083 17.22 0.007952 33.645 0.81069 ? 160.04 1800 0.90446 168.57 1.972 14.461 0.0088014 40.908 0.8252 ? 161.7 1900 0.90172 166.97 1.839 11.713 0.0098257 46.58 0.83233 ? 163.2 2000 0.89927 165.33 1.7253 9.0465 0.011062 50.849 0.83898 ? 164.63 2100 0.89713 163.64 1.6281 6.4503 0.012486 53.942 0.84528 ? 166 2200 0.89532 161.88 1.5454 3.9129 0.014088 56.092 0.85135 ? 167.32 2300 0.89386 160.04 1.4755 1.4231 0.015869 57.498 0.85727 ? 168.6 2400 0.89277 158.1 1.4171 ? 1.0309 0.01784 58.314 0.86313 ? 169.84 2500 0.89205 156.03 1.3692 ? 3.4611 0.020023 58.659 0.86899 ? 171.05 2600 0.89096 153.83 1.3297 ? 5.8933 0.022423 58.605 0.87436 ? 17 2.23 2 700 0.88445 151.58 1.2888 ? 8.4222 0.024891 58.132 0.87579 ? 173.35 2800 0.87762 149.17 1.2551 ? 10.982 0.027588 57.364 0.87715 ? 174.44 2900 0.87039 146.59 1.2281 ? 13.588 0.030547 56.329 0.87847 ? 175.5 3000 0.86268 143.8 1.2076 ? 16.259 0.033808 55.045 0.8798 ? 176.54 3100 0.85434 140.75 1.1934 ? 19.013 0.037423 53.519 0.88118 ? 177.56 3200 0.84525 137.4 1.1855 ? 21.877 0.041451 51.748 0.88265 ? 178.56 3300 0.83522 133.68 1.1839 ? 24.877 0.045967 49.721 0.88425 ? 179.53 3400 0.82403 129.52 1.1889 ? 28.05 0.051058 47.418 0.88607 179.52 3500 0.80856 125.24 1.1872 ? 31.326 0.056194 44.92 0.88556 178.56 3600 0.79077 120.6 1.1867 ? 34.765 0.061705 42.174 0.88468 177.6 3700 0.77106 115.45 1.1896 ? 38.412 0.067742 39.146 0.88406 176.66 3800 0.74926 109.7 1.1956 ? 42.297 0.074348 35.812 0.88382 175.74 3900 0.72527 103.23 1.2044 ? 46.449 0.081559 32.146 0.88412 174.82 4000 0.69912 95.917 1.2152 ? 50.902 0.089394 28.121 0.88516 173.9 4100 0.67108 87.595 1.2274 ? 55.686 0.097849 23.71 0.88717 172.98
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 13 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 4200 0.64183 78.092 1.24 ? 60.826 0.10688 18.891 0.89042 172.03 4300 0.6126 67.228 1.2515 ? 66.34 0.11639 13.65 0.89516 171.03 4400 0.58534 54.856 1.2604 ? 72.231 0.12622 7.9864 0.90159 169.95 4500 0.5628 40.93 1.2649 ? 78.48 0.13615 1.9193 0.90984 168.75 4600 0.54816 25.608 1.2633 ? 85.047 0.14588 ? 4.5074 0.91983 167.38 4700 0.54433 9.3292 1.2542 ? 91.862 0.15511 ? 11.224 0.9313 165.79 4800 0.55279 ? 7.214 1.2369 ? 98.835 0.16356 ? 18.138 0.94381 163.95 4900 0.57293 ? 23.266 1.2115 ? 105.86 0.17103 ? 25.144 0.95677 161.82 5000 0.60219 ? 38.234 1.1791 ? 112.84 0.17745 ? 32.138 0.96962 159.39 5100 0.63534 ? 51.341 1.1406 ? 119.47 0.18272 ? 38.825 0.9807 156.67 5200 0.66527 ? 61.779 1.0972 ? 125.31 0.18683 ? 44.756 0.98704 153.74 5300 0.69493 ? 71.079 1.0544 ? 130.96 0.1906 ? 50.53 0.99214 150.52 5400 0.72195 ? 78.947 1.0134 ? 136.23 0.19423 ? 55.963 0.99508 147.04 5500 0.74577 ? 85.567 0.97537 ? 141.15 0.19795 ? 61.088 0.99579 143.28 5600 0.76759 ? 91.49 0.94075 ? 146 0.20193 ? 66.161 0.99532 139.15 5700 0.78744 ? 96.798 0.90986 ? 150.8 0.20632 ? 71.236 0.99371 134.58 5800 0.80548 ? 101.57 0.88283 ? 155.64 0.21125 ? 76.374 0.99093 129.47 5900 0.82197 ? 105.86 0.85961 ? 160 .5 8 0.21682 ? 81.647 0.98694 123.72 6000 0.83722 ? 109.72 0.84 ? 165.71 0.22309 ? 87.14 0.98164 117.18 table 13. s-parameter ?continued small signal; v ds = 50 v; i dq = 150 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree)
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 14 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 9. package outline fig 14. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-28 12-05-02 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 15 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt fig 15. package outline sot467b references outline version european projection issue date iec jedec jeita sot467b sot467b_po 11-08-18 12-05-01 unit (1) mm max nom min 4.67 3.94 5.59 5.33 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 18.29 17.27 9.78 9.53 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. earless ceramic package; 2 leads sot467b bc 0.15 0.10 dd 1 ee 1 f 1.65 1.40 hq 2.21 1.96 u 1 u 2 5.97 5.72 w 2 0.25 inches max nom min 0.184 0.155 0.22 0.21 0.364 0.356 0.365 0.355 0.233 0.227 0.235 0.225 0.72 0.68 0.385 0.375 0.006 0.004 0.065 0.055 0.087 0.077 0.235 0.225 0.01 0 5 mm scale w 2 a b h 1 2 u 1 u 2 c q e e 1 d d a f d 1 3
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 16 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 10. handling information 10.1 esd sensitivity [1] classification 1b is granted to any part that passes after exposure to an esd pulse of 500 v, but fails after exposure to an esd pulse of 1000 v. 11. abbreviations 12. revision history table 14. esd sensitivity esd model class human body model (hbm); according jedec standard jesd22-a114f 1b [1] table 15. abbreviations acronym description cw continuous wave emc electromagnetic compatibility esd electrostatic discharge gan gallium nitride hemt high electron mobility transistor vswr voltage standing-wave ratio wimax worldwide interoperability for microwave access table 16. revision history document id release date data sheet status change notice supersedes clf1g0035-50_1g0035s-50 v.2 20130129 objective data sheet - clf1g0035-50_1g0035s-50 v.1 modifications: ? table 7 on page 3 : table has been updated. ? section 7 on page 4 : layout has been changed. ? section 8 on page 10 : layout has been changed. clf1g0035-50_1g0035s-50 v.1 201 20615 objective data sheet - -
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 17 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
clf1g0035-50_1g0035s-50 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 2 ? 29 january 2013 18 of 19 nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors clf1g0035-50; CLF1G0035S-50 broadband rf power gan hemt ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 january 2013 document identifier: clf1g0035-50_1g0035s-50 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 2 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 application test results . . . . . . . . . . . . . . . . . . . 6 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.3.1 1-tone cw rf performance. . . . . . . . . . . . . . . 7 7.3.2 1-tone pulsed rf performance . . . . . . . . . . . . 8 7.3.3 2-tone cw performance . . . . . . . . . . . . . . . . . 9 7.4 bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 ruggedness in class-ab operation . . . . . . . . 10 8.2 load pull impedance information . . . . . . . . . . 10 8.3 packaged s-parameter data. . . . . . . . . . . . . . 12 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 handling information. . . . . . . . . . . . . . . . . . . . 16 10.1 esd sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 16 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 contact information. . . . . . . . . . . . . . . . . . . . . 18 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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