dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 1 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product dual n - channel enhancement mode mosfet product summary v (br)dss r ds( on ) m ax i d t a = + 25 c 2 0v 20.2 m ? @ v gs = 4.5 v 7.5a 2 3 . 5 m ? @ v gs = 2.5 v 7.0a description this new generation mosfet is designed to minimize the on - state resistance (r ds (on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? power m anagement f unctions ? battery pack ? load switch features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: u - dfn 203 0 - 6 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? weight: 0.01 2 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmn20 2 8 u fu - 7 u - dfn2030 - 6 3000 / tape & reel dmn20 2 8 u fu - 13 u - dfn2030 - 6 10 000 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/package s.html . marking information r2 3 = product type marking code y yww = date code marking y y = last d igit of y ear ( ex: 1 4 for 20 1 4 ) ww = week c ode ( 01 to 53 ) r23 y y w w esd protected bottom view u - dfn 203 0 - 6 equivalent circuit t op view d1 s1 g1 g ate protection diode d2 s2 g2 g ate protection diode
dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 2 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 2 0 v gate - source voltage v gss 10 v continuous drain current (note 6 ) v gs = 4.5v steady state t a = + 25c t a = + 70 c i d 7.5 6.0 a t<10s t a = + 25c t a = + 70 c i d 9.9 7.9 a pulsed drain current ( 10s dm 40 a avalanche current (note 7) l = 0.1mh i as 12 a avalanche energy (note 7) l = 0.1mh e as 8 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 0. 9 w thermal resistance, junction to ambient (note 5) s teady state r ? ja 144 c/w t<10s 84 total power dissipation (note 6 ) t a = + 25c p d 1. 8 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 69 c/w t<10s 40 thermal resistance, junction to case r ? j c 8 .4 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 20 gs = 0v, i d = 250 a j = +25c i dss ds = 20 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 0. 5 ds = v gs , i d = 250 a ds (on) ? gs = 4. 5 v, i d = 4 .5 a 1 5.4 22 . 5 v gs = 4.0 v, i d = 4.0 a 1 6.7 23 .0 v gs = 3.1 v, i d = 4.0 a 18 .3 2 3 .5 v gs = 2.5 v, i d = 3 .5a 24.2 30 .0 v gs = 1.8 v, i d = 3 .5a diode forward voltage v sd gs = 0v, i s = 1 a dynamic characteristic s (note 9 ) input capacitance c iss ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 10 v, i d = 6.5 a total gate charge ( v gs = 8 v ) q g gs gd d( on ) ds = 10 v, v g s = 4.5 v, r g = 6 l = 10 d = 1 a turn - on rise time t r d( off ) f rr f = 4 a, di/dt = 1 00a/ rr f = 4 a, di/dt = 1 00a/ notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 3 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =1.2v v gs =1.5v v gs =1.8v v gs =2.5v v gs =3.5v v gs =4.0v v gs =4.5v 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v t a = - 55 t a =25 t a =85 t a =150 t a =125 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =4a 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =1.5v v gs =1.8v v gs =2.5v v gs =4.5v 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs = 4.5v t a = - 55 t a =125 t a =150 t a =85 t a =25 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 6. on - resistance variation with temperature v gs =4.5v, i d =6.5a v gs =2.5v, i d =5.5a
dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 4 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =4.5v, i d =6.5a v gs =2.5v, i d =5.5a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =1ma i d =250 a 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =25 v gs =0v, t a =150 v gs =0v, t a =125 v gs =0v, t a =85 0 2 4 6 8 0 2 4 6 8 10 12 14 16 18 20 v gs (v) q g (nc) figure 11. gate charge v ds =10v, i d =6.5a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs = 4.5 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 5 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =1 41 u - dfn 2030 - 6 (type b) dim min max typ a 0. 55 0. 65 0.60 a1 0 .00 0.05 0.02 a 3 -- -- 0.15 b 0. 20 0. 30 0. 25 d 1.95 2.05 2 . 0 0 d2 1.40 1.60 1.50 e 2.95 3. 05 3. 0 0 e2 1.65 1.75 1.70 e -- -- 0.50 l 0. 28 0. 38 0. 33 z -- -- 0.375 all dimensions in mm d e e b l e2 z(4x) a a1 a3 seating plane d2 pin#1 id
dm n20 2 8 u fu document number: ds 37945 rev. 1 - 2 6 of 6 www.diodes.com may 2015 ? diodes incorporated dm n20 2 8 u fu advance information new product suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com dimensions value (in mm) g 0.220 x 0.350 x1 0.850 x2 1.600 x3 1.350 y 0.530 y1 1.800 y2 3.300 y1 y x x1 x2 y2 g x3
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