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diode rapidswitchingemittercontrolleddiode IDW75D65D1 emittercontrolleddioderapid1dualanodeseries datasheet industrialpowercontrol
2 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 rapidswitchingemittercontrolleddiode features: ?qualifiedaccordingtojedecfortargetapplications ?650vemittercontrolledtechnology ?temperaturestablebehaviourofkeyparameters ?lowforwardvoltage( v f ) ?ultrafastrecovery ?lowreverserecoverycharge( q rr ) ?lowreverserecoverycurrent( i rrm ) ?175cjunctionoperatingtemperature ?pb-freeleadplating ?rohscompliant applications: ?ac/dcconverters ?boostdiodeinpfcstages ?freewheelingdiodesininvertersandmotordrives ?generalpurposeinverters ?switchmodepowersupplies packagepindefinition: ?pin1-anode ?pin2andbackside-cathode ?pin3-anode key performance and package parameters type v rrm i f v f , t vj =25c t vjmax marking package IDW75D65D1 650v 75a 1.35v 175c d75ed1 pg-to247-3 a c a 1 2 3
3 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 table of contents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 a c a 1 2 3
4 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 maximum ratings for optimum lifetime and reliability, infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. parameter symbol value unit repetitivepeakreversevoltage, t vj 3 25c v rrm 650 v diodeforwardcurrent,limitedby t vjmax 1) t c =25c t c =100c i f 150.0 75.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 225.0 a diode surge non repetitive forward current 2) t c =25c, t p =10.0ms,sinehalfwave i fsm 580.0 a powerdissipation t c =25c powerdissipation t c =100c p tot 326.0 163.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermal resistances parameter symbol conditions max. value unit characteristic diode thermal resistance, 3) junction - case r th(j-c) 0.46 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electrical characteristics, at t vj = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit static characteristic diode forward voltage v f i f =75.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.32 1.28 1.70 - - v reverse leakage current i r v r =650v t vj =25c t vj =175c - - - 3000.0 40.0 - a 1) maximum current for pin 1 and pin 3 is 80a (value limited by bondwire). 2) for a balanced current flow through pins 1 and 3. 3) pleasebeawarethatinnonstandardloadconditions,duetohigh r th(j-c) , t vj closeto t vjmax canbereached. a c a 1 2 3
5 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 electrical characteristic, at t vj = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit dynamic characteristic internal emitter inductance 1) measured 5mm (0.197 in.) from case l e - 7.0 - nh switching characteristics, inductive load value min. typ. max. parameter symbol conditions unit diode characteristic, at t vj = 25c diode reverse recovery time t rr - 108 - ns diode reverse recovery charge q rr - 1.25 - c diode peak reverse recovery current i rrm - 19.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1100 - a/s t vj =25c, v r =400v, i f =75.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch igz100n65h5. diode reverse recovery time t rr - 127 - ns diode reverse recovery charge q rr - 0.48 - c diode peak reverse recovery current i rrm - 6.4 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -32 - a/s t vj =25c, v r =400v, i f =40.0a, di f /dt =200a/s, l s =30nh, c s =40pf, switch igz100n65h5. switching characteristics, inductive load value min. typ. max. parameter symbol conditions unit diode characteristic, at t vj = 175c/125c diode reverse recovery time t rr - 174 - ns diode reverse recovery charge q rr - 4.16 - c diode peak reverse recovery current i rrm - 37.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1170 - a/s t vj =175c, v r =400v, i f =75.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch igz100n65h5. 1) for a balanced current flow through pins 1 and 3. a c a 1 2 3
6 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 diode reverse recovery time t rr - 184 - ns diode reverse recovery charge q rr - 1.64 - c diode peak reverse recovery current i rrm - 13.2 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -62 - a/s t vj =125c, v r =400v, i f =40.0a, di f /dt =200a/s, l s =30nh, c s =40pf, switch igz100n65h5. a c a 1 2 3
7 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 figure 1. power dissipation as a function of case temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 35 70 105 140 175 210 245 280 315 350 figure 2. collector current as a function of case temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 figure 3. diode transient thermal impedance as a function of pulse width ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 3.1e-4 1.0e-5 2 0.01435 3.0e-5 3 0.09435 2.2e-4 4 0.09881 2.2e-3 5 0.22828 0.01247 6 0.01967 0.10291 7 2.0e-3 1.85641 figure 4. typical reverse recovery time as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 600 1000 1400 1800 2200 2600 3000 0 25 50 75 100 125 150 175 200 225 250 t vj =25c, i f =75a t vj =125c, i f =75a t vj =175c, i f =75a a c a 1 2 3
8 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 figure 5. typical reverse recovery charge as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 600 1000 1400 1800 2200 2600 3000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t vj =25c, i f =75a t vj =125c, i f =75a t vj =175c, i f =75a figure 6. typical reverse recovery current as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 200 600 1000 1400 1800 2200 2600 3000 0 10 20 30 40 50 60 70 t vj =25c, i f =75a t vj =125c, i f =75a t vj =175c, i f =75a figure 7. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 600 1000 1400 1800 2200 2600 3000 -2500 -2250 -2000 -1750 -1500 -1250 -1000 -750 -500 -250 0 t vj =25c, i f =75a t vj =125c, i f =75a t vj =175c, i f =75a figure 8. typical diode forward current as a function of forward voltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 15 30 45 60 75 90 105 120 135 150 t vj =25c t vj =175c a c a 1 2 3
9 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 figure 9. typical diode forward voltage as a function of junction temperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 i f =20a i f =37.5a i f =75a a c a 1 2 3
10 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 pg-to247-3 a c a 1 2 3
11 IDW75D65D1 emittercontrolleddioderapid1dualanodeseries rev.2.1,2014-12-10 pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce a c a 1 2 3
12 IDW75D65D1 emitter controlled diode rapid 1 dual anode series rev. 2.1, 2014-12-10 revision history IDW75D65D1 previous revision revision date subjects (major changes since last revision) 1.1 2014-12-02 preliminaryt data sheet 2.1 2014-12-10 final data sheet pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce a c a 1 2 3

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