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this is information on a product in full production. july 2012 doc id 023484 rev 1 1/12 12 STP75N75F4 n-channel 75 v, 0.0092 typ., 78 a stripfet? deepgate? power mosfet in a to-220 package datasheet ? production data features n-channel enhancement mode 100% avalanched rated low gate charge very low on-resistance applications switching applications description this device is an n-channel power mosfet developed using st?s stripfet? deepgate? technology. the device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. figure 1. internal schematic diagram type v dss r ds(on) max i d STP75N75F4 75 v < 0.011 78 a to-220 1 2 3 tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging STP75N75F4 75n75f4 to-220 tube www.st.com
contents STP75N75F4 2/12 doc id 023484 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP75N75F4 electrical ratings doc id 023484 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 75 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 78 a i d drain current (continuous) at t c = 100 c 55 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 312 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c e as (2) 2. starting t j = 25 c, i d = 35 a, v dd = 50 v single pulse avalanche energy 185 mj t stg storage temperature ? 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STP75N75F4 4/12 doc id 023484 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = 75 v 1 a v ds = 75 v,t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 39 a 0.0092 0.011 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 5015 pf c oss output capacitance - 382 - pf c rss reverse transfer capacitance 218 pf q g total gate charge v dd = 37.5 v, i d = 78 a, v gs = 10 v (see figure 14) 76 nc q gs gate-source charge - 23 - nc q gd gate-drain charge 18.5 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 37.5 v, i d = 39 a r g =4.7 v gs = 10 v (see figure 13) - 25 33 - ns ns t d(off) t f turn-off-delay time fall time - 61 14 - ns ns
STP75N75F4 electrical characteristics doc id 023484 rev 1 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 78 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 312 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 78 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 78 a, v dd = 60 v di/dt = 100 a/s, t j = 150 c (see figure 15) - 67 183 5.5 ns nc a
electrical characteristics STP75N75F4 6/12 doc id 023484 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms ms 4j?# 4c?# 3inlge pulse !-v 6 6 6 6 '3 6 ) $ 6 $3 6 ! !-v ) $ 6 '3 6 ! 6 $3 6 !-v "6 $33 4 * ?# norm ) $ ?! !-v 2 $3on ) $ ! m/hm 6 '3 6 !-v
STP75N75F4 electrical characteristics doc id 023484 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized on-resistance vs temperature figure 11. normalized gate threshold voltage vs temperature figure 12. source-drain diode forward characteristics 6 '3 1 g n# 6 6 $$ 6 ) $ ! !-v # 6 $3 6 p& #iss #oss #rss !-v 2 $3on 4 * ?# norm !-v 6 '3th 4 * ?# norm !-v 4 * ?# 4 * ?# 4 * ?# 6 3$ ) 3$ ! 6 !-v
test circuits STP75N75F4 8/12 doc id 023484 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STP75N75F4 package mechanical data doc id 023484 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STP75N75F4 10/12 doc id 023484 rev 1 figure 19. to-220 type a drawing 00159 88 _typea_rev_ s
STP75N75F4 revision history doc id 023484 rev 1 11/12 5 revision history table 9. document revision history date revision changes 24-jul-2012 1 first release.
STP75N75F4 12/12 doc id 023484 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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