preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 1 / 6 version 0. 3 product features application s ? gan on sic hemt ? in/out impedance matching ? surface mount hybrid type ? small size & mas s ? high efficiency ? low cost ? point to point ? radio system description the h s 1 09 119 - 5 a is designed for radio system ap plic ation frequencies from 109 0 0 mhz to 119 0 0mhz. this amplifier uses gan hemt technology which performs high breakdown voltage, high efficiency. high in/output impedance, h igh power d ensity. electrical specification s @ vgs@idq=8 0 ma, v ds = 40 v, ta=25 , 50ohm system p arameter u nit min typ max condition operating frequency mhz 10900 - 119 00 zs = zl = 50ohm operating bandwidth mhz - 1000 - - input return loss db - - 9 - - output pulse power @ p 3db dbm - 3 7 - pulse width = 100us duty cycle = 10% input pulse power dbm - 3 0 - power gain @ p 3db db - 7 - gain flatness db - 1 - efficiency % - 3 0 - oip3 dbm - 41 - c ontinuous wave 2 8 dbm@2tone imd dbc - 25 - caution the drain voltage must be supplied to the device after the gate voltage is suppli ed turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage n ote h s series have internal dc blocking capacitors at the rf input and output ports package type : np - 1 8
preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 2 / 6 version 0. 3 mechan ical specifications parameter u nit t yp remark mass g 1 - dimension L 15 x 1 0 x 5.4 - absolute maximum ratings parameter u nit r ating s ymbol gate - source voltage v - 10 ~ 0 vgs drain - source voltage v 50 v ds gate current m a 1.2 i g operating junction temperature c 250 t j operating case temperature c - 4 0 ~ 6 5 t c storage temperature c - 40 ~ 10 0 t stg operating v oltages parameter u nit m in t yp m ax s ymbol drain voltage v - 40 - v ds gate voltage (on - stage) v - vgs@idq - 2 v gs gate voltage (off - stag e) v - - 8 - v gs block diagram +vds - vgs input matching circuit out put matching circuit input output
preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 3 / 6 version 0. 3 performance charts * test condition : test frequency = 11.5 ghz, vgs @idq = 80 ma, vds =+ 40 v, ta=25 out put power vs in put power power gain vs out put power ids vs out put power e fficiency vs out put power oip3 vs output power imd vs output power output power dbm per tone, 1 mhz spacing
preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 4 / 6 version 0. 3 package dimensions (type: np - 18 ) * u nit: mm[inch] | tolerance: 0.15[.006] * u nit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 gnd 3 gnd 5 rf output 7 drain bias (+v ds ) 2 rf input 4 gnd 6 gnd 8 gate bias ( - v gs ) recommended pattern * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove h eat. 2. to properly use heatsink, ensure the g round/thermal via hole region to contact the heatsink. we recommend the mounting screws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsin k 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal therm al performance.
preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 5 / 6 version 0. 3 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biase s are applied in accordance to the sequence during tur n - on and turn - off. the pallet amplifier does not have a built - in bias sequence circuit. therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn - on 1. connect gnd. 2. apply vgs 3. apply v ds 4. apply the rf power. during turn - off 1. turn off rf power. 2. turn off v ds , and then, turn off the vgs 3. remove all connections. turn on turn off - sequence timing diagram -
preliminary gan hybrid power amplifier h s1 09 119 - 5 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facili ty : 919 - 6 77 - 8780 / sales@rfhicusa.com 6 / 6 version 0. 3 reflow p rofile * reflow oven settings zone a b c d e f temperature( c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * measured reflow profile ordering information part number package design h s1 09 119 - 5 a - r (reel) - b (bulk) - ev b (evaluation board) revision history part number release date version modification data sheet status hs109119 - 5a 201 4 . 6 .2 6 0. 3 a mass of mechanical specification is changed . preliminary hs109119 - 5a 2013.10.29 0.2 change part number. preliminary hs109119 - 6a 2013.08.29 0.1 newly created. preliminary rfhic corporation reserves the right to make changes to any products h erein or to discontinue any product at any time without notice. while product specifications have be en thoroughly examined for reliability, rfhic corporation strongly recommends buyers to verify that the information they are using is accurate before orderi ng. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, inc luding without limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction o f the product can be expected to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold rfhic corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorize d use. sales, inquiries and support should be directed to the local authorized geographic distributor for rfhic corporation. for customers in t he us, please contact the us sales team at 919 - 6 77 - 8780 . for all other inquiries, please contact the international sales team at 82 - 31 - 250 - 5078.
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