RU7H2K n-channel advanced power mosfet symbol rating unit v dss 700 v gss 30 t j 150 c t stg -55 to 150 c i s t c =25c 2 a i dp t c =25c 8 a t c =25c 2 t c =100c 1.3 t c =25c 56 t c =100c 22 r jc 2.2 c/w r ja 100 c/w e as 5 mj ruichips semiconductor co., ltd rev. a? jan., 2013 1 www.ruichips.com pin description features applications absolute maximum ratings to251 n-channel mosfet parameter common ratings (t c =25c unless otherwise noted) ? 700v/2a, r ds (on) =5000m(typ.)@v gs =10v ? super high dense cell design ? fast switching ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? high efficiency switch mode power supplies drain-source voltage v gate-source voltage maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient
RU7H2K min. typ. max. bv dss drain-source breakdown voltage 700 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 5000 6500 m v sd diode forward voltage 1.2 v t rr reverse recovery time 210 ns q rr reverse recovery charge 2 c r g gate resistance 3 c iss input capacitance 280 c oss output capacitance 40 c rss reverse transfer capacitance 5 t d(on) turn-on delay time 30 t r turn-on rise time 70 t d(off) turn-off delay time 85 t f turn-off fall time 55 q g total gate charge 10 q gs gate-source charge 1.6 q gd gate-drain charge 4 notes: ruichips semiconductor co., ltd rev. a? jan., 2013 2 www.ruichips.com electrical characteristics (t c =25c unless otherwise noted) v dd =350v, r l =175, i ds =2a, v gen =10v, r g =25 v ds =560v, v gs =10v, i ds =2a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. limited by t jmax , i as =3a, v dd = 100v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =2a, v gs =0v i sd =2a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =350v, frequency=1.0mhz pf dynamic characteristics v gs =30v, v ds =0v v gs =10v, i ds =1a diode characteristics v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU7H2K unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =700v, v gs =0v a
RU7H2K device marking package packaging quantity reel size tape width RU7H2K RU7H2K to251 tube 75 - - RU7H2K2 RU7H2K to251-s tube 75 - - ruichips semiconductor co., ltd rev. a? jan., 2013 3 www.ruichips.com ordering and marking information
RU7H2K ruichips semiconductor co., ltd rev. a? jan., 2013 4 www.ruichips.com typical characteristics 0 1 2 3 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 2000 4000 6000 8000 10000 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=1a 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 10 1e -05 0.0001 0.001 0.01 0.1 1 10 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 2.2 c/w
RU7H2K ruichips semiconductor co., ltd rev. a? jan., 2013 5 www.ruichips.com typical characteristics 0 1 2 3 0 2 4 6 8 10 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 5v 6v 8v 10v 0 2000 4000 6000 8000 10000 0 1 2 3 4 5 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =1a t j =25 c rds(on)=5000m 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 100 200 300 400 500 1 10 100 1000 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=560v ids=2a
RU7H2K ruichips semiconductor co., ltd rev. a? jan., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU7H2K ruichips semiconductor co., ltd rev. a? jan., 2013 7 www.ruichips.com package information to251 d1 e1 a1 c a c1 b2 e d l 3xb1 2x e l2 3xb l1 min nom max min nom max a 2.220 2.320 2.420 0.087 0.091 0.095 a1 0.890 1.015 1.140 0.035 0.040 0.045 b 0.550 0.610 0.670 0.022 0.024 0.026 b1 0.760 0.860 0.960 0.030 0.034 0.038 b2 5.200 5.300 5.400 0.205 0.209 0.213 c 0.460 0.515 0.570 0.018 0.020 0.022 c1 0.450 0.500 0.550 0.018 0.020 0.022 d 5.950 6.100 6.250 0.234 0.240 0.246 d1 4.200 4.350 4.500 0.165 0.171 0.177 e 6.400 6.550 6.700 0.252 0.258 0.264 e1 4.750 4.800 4.850 0.187 0.189 0.191 e 2.280 ref 0.090 ref l 8.900 9.200 9.500 0.350 0.362 0.374 l1 1.900 2.095 2.290 0.075 0.082 0.090 l2 0.900 0.950 1.000 0.035 0.037 0.039 symbol mm inch
RU7H2K ruichips semiconductor co., ltd rev. a? jan., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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