FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 1 april 2013 FDD5N50 n-channel unifet tm ii mosfet ? 500 v, 4 a, 1.4 ? features ?r ds(on) = 1.15 ? (typ.) @ v gs = 10 v, i d = 2 a ? low gate charge (typ. 11 nc) ? low c rss (typ. 5 pf) ? 100% avalanche tested ? rohs compliant applications ? lcd/led/pdp tv ? lighting ? uninterruptible power supply description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device fam ily is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. d g s g s d d-pak mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDD5N50 unit v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current - continuous (t c = 25 o c) 4 a - continuous (t c = 100 o c) 2.4 i dm drain current - pulsed (note 1) 16 a e as single pulsed avalanche energy (note 2) 256 mj i ar avalanche current (note 1) 4 a e ar repetitive avalanche energy (note 1) 4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 40 w - derate above 25 o c0.3w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDD5N50 unit r ? jc thermal resistance, junction to case, max. 1.4 o c/w r ? ja thermal resistance, junction to ambient, max. 110
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDD5N50 FDD5N50tm d-pak 380mm 16mm 2500 FDD5N50 FDD5N50tm_ws d-pak 380mm 16mm 2500 FDD5N50 FDD5N50tf d-pak 380mm 16mm 2000 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 ? a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 2a - 1.15 1.4 ? g fs forward transconductance v ds = 20v, i d = 2a - 4.3 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 480 640 pf c oss output capacitance - 66 88 pf c rss reverse transfer capacitance - 5 8 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 5a v gs = 10v (note 4) -1115nc q gs gate to source gate charge - 3 - nc q gd gate to drain ?miller? charge - 5 - nc t d(on) turn-on delay time v dd = 250v, i d = 5a r g = 25 ? (note 4) -1336ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 28 66 ns t f turn-off fall time - 20 50 ns i s maximum continuous drain to source diode forward current - - 4 a i sm maximum pulsed drain to source diode forward current - - 16 a v sd drain to source diode forward voltage v gs = 0v, i sd = 4a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 5a di f /dt = 100a/ ? s - 300 - ns q rr reverse recovery charge - 1.8 - ? c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 32mh, i as = 4a, v dd = 50v, r g = 25 ? , starting t j = 25c 3: i sd ?? 4a, di/dt ?? 200a/ ? s, v dd ?? bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 30 0.04 *notes: 1. 250 ? s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 20 45678 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 20 036912 1.0 1.5 2.0 2.5 3.0 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.40.81.21.6 1 10 *notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 70 0.1 1 10 0 250 500 750 1000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 04812 0 2 4 6 8 10 *note: i d = 5a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. transient thermal response curve -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 1 2 3 4 i d , drain current [a] t c , case temperature [ o c ] 4.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z ? jc (t) = 1.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] 3 t 1 p dm t 2
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
FDD5N50 n-channel unifet tm ii mosfet ?2008 fairchild semiconductor corporation FDD5N50 rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ?
|
