? semiconductor components industries, llc, 2005 october, 2005 ? rev. 1 1 publication order number: NTLTD7900N/d NTLTD7900N power mosfet 8.5 a, 20 v, logic level, n?channel micro8 leadless ezfets ? are an advanced series of power mosfets which contain monolithic back?to?back zener diodes. these zener diodes provide protection against esd and unexpected transients. these miniature surface mount mosfet s feature ultra low r ds(on) and true logic level performance. ezfet devices are designed for use in low voltage, high speed switching applications where power efficiency is important. typical applications are dc?dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. applications ? zener protected gates provide electrostatic discharge protection ? designed to withstand 4000 v human body model ? ultra low r ds(on) provides higher efficiency and extends battery life ? logic level gate drive ? can be driven by logic ics ? micro8 leadless surface mount package ? saves board space ? i dss specified at elevated temperature ? pb?free package is available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol 10 secs steady state unit drain?to?source voltage v dss 20 v gate?to?source voltage v gs 12 v continuous drain current (note 1) t a = 25 c t a = 85 c i d 8.5 6.1 6.0 4.2 a pulsed drain current (tp 600 s) i dm 30 a continuous source?diode conduction (note 1) i s 2.9 1.4 a total power dissipation (note 1) t a = 25 c t a = 85 c p d 3.1 1.6 1.5 0.79 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance (note 1) junction?to?ambient r ja 40 82 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to 1 x1 fr?4 board. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. micro8 leadless case 846c http://onsemi.com source 1 gate 1 source 2 gate 2 drain drain drain drain (bottom view) pin assignment a = assembly location y = year ww = work week = pb?free package 1 marking diagram 790n ayww 1 1 2 3 4 8 7 6 5 dd 2.4 k 2.4 k s 2 s 1 g 2 g 1 n?channel n?channel drain http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 20 v 22 m @ 2.5 v 20 m @ 4.5 v r ds(on) typ 8.5 a i d max v (br)dss
NTLTD7900N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 2) (v gs = 0 vdc, i d = 250 adc) v (br)dss 20 ? ? vdc zero gate voltage drain current (v ds = 16 vdc, v gs = 0 vdc) (v ds = 16 vdc, v gs = 0 vdc, t j = 85 c) i dss ? ? ? ? 1.0 20 adc gate?body leakage current (v gs = 4.5 vdc, v ds = 0 vdc) (v gs = 12 vdc, v ds = 0 vdc) i gss ? ? ? ? 1.0 500 adc on characteristics (note 2) gate threshold voltage (note 2) (v ds = v gs , i d = 250 adc) v gs(th) 0.4 ? 0.9 vdc static drain?to?source on?resistance (note 2) (v gs = 4.5 vdc, i d = 6.5 adc) (v gs = 2.5 vdc, i d = 5.8 adc) r ds(on) ? ? 20 22 26 31 m dynamic characteristics input capacitance (v ds = 16 vdc, v gs = 0 v, f = 10 khz) c iss ? 785 ? pf output capacitance c oss ? 135 ? transfer capacitance c rss ? 100 ? switching characteristics (note 3) gate charge (v gs = 4.5 vdc, i d = 6.5 adc, v ds = 10 vdc) (note 2) q t ? 12.4 16 nc q 1 ? 1.3 ? q 2 ? 3.5 ? turn?on delay time (v gs = 4.5 vdc, v dd = 10 vdc, i d = 1.0 adc, r g = 9.1 ) (note 2) t d(on) ? 0.55 1.1 s rise time t r ? 1.17 2.2 turn?off delay time t d(off) ? 2.9 5.8 fall time t f ? 3.8 7.7 source?drain diode characteristics forward on?voltage (i s = 1.5 adc, v gs = 0 vdc) i s = 1.5 adc, v gs = 0 vdc, t j = 85 c) (note 2) v sd ? ? 0.65 0.60 1.0 ? vdc 2. pulse test: pulse width ? 300 s, duty cycle ? 2%. 3. switching characteristics are independent of operating junction temperatures.
NTLTD7900N http://onsemi.com 3 typical electrical characteristics 0 5 10 15 20 25 30 012345 v gs = 2 v 1.7 v 1.4 v t j = 25 c i d , drain current (a) v ds , drain?to?source voltage (v) 2.5 v 3.5 v 4.5 v figure 1. on?region characteristics t j = 125 c t j = ?55 c t j = 25 c i d , drain current (a) v gs , gate?to?source voltage (v) figure 2. transfer characteristics v ds 10 v 0.07 0.01 0.02 0.03 0.04 12 3 4 r ds(on) , drain?to?source resistance ( ) v gs , gate?to?source voltage (v) figure 3. on?resistance versus gate voltage t = 25 c i d = 8.5 a 0 0.01 0.02 0.03 0.04 51015202530 figure 4. on?resistance versus drain current and gate voltage v gs = 4.5 v v gs = 2.5 v t j = 25 c r ds(on) , drain?to?source resistance ( ) i d , drain current (a) 0.6 0.8 1 1.2 1.6 ?50 ?25 0 25 50 75 100 125 150 r ds(on) , drain?to?source resistance (normalized) t j , temperature ( c) figure 5. on?resistance variation with temperature i d = 8.5 a v gs = 4.5 v 100 1000 10000 100000 0 5 10 15 20 v gs = 0 v t j = 125 c t j = 150 c i dss , leakage (na) v ds , drain?to?source voltage (v) figure 6. drain?to?source leakage current versus voltage 0.05 0.06 0 0 5 10 15 20 25 30 0123 1.1 v 1.4
NTLTD7900N http://onsemi.com 4 typical electrical characteristics 0 200 400 600 800 0 5 10 15 20 v gs , gate?to?source voltage (v) gate?to?source or drain?to?source voltage (v) figure 7. capacitance variation c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v 0 1 2 3 4 5 02 4 6 810 q g , total gate charge (nc) figure 8. gate?to?source and drain?to?source voltage versus total charge q t q gd q gs i d = 6.5 a t j = 25 c 10 100 1000 1 10 100 t, time (ns) t r t d(on) t d(off) t f r g , gate resistance ( ) figure 9. resistive switching time variation versus gate resistance v dd = 10 v i d = 1.0 a v gs = 4.5 v 0 1 2 3 0.2 0.4 v sd , source?to?drain voltage (v) figure 10. diode forward voltage versus current i s , source current (a) v gs = 0 v t j = 25 c 10000 0.6 0.8 0 1000 1200 1400 12 14 figure 11. thermal response r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t, time (seconds) r(t), effective transient thermal resistance (normalize d) 1 0.1 d = 0.5 10?4 10?2 10?1 1 0.2 0.01 0.02 0.05 0.1 10 100 0 single pulse 10?3 100
NTLTD7900N http://onsemi.com 5 ordering information device package shipping ? NTLTD7900Nr2g micro8 ll (pb?free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTLTD7900N http://onsemi.com 6 package dimensions micro8 leadless case 846c?01 issue o a m n b 0.15 t 0.15 t 2 pl 2 pl pin 1 i.d. index area 8 7 6 5 1 2 3 4 top view p f e l 8 pl c1 c2 c4 c3 s u 4 pl r h detail z g 6 pl l 8 pl d w m 0.10 y t terminal tip note 5 l1 detail z j ?t? k 0.10 t 0.08 t 8 pl 8 pl c aa aa seating plane side view view aa?aa notes: 1. dimensions and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. the terminal #1 identifier and terminal numbering convention shall conform to jesd 95?1 spp?012. details of terminal #1 identifier are optional, but must be located within the zone indicated. the terminal #1 identifier may be either a mold or marked feature. 4. dimension d applies to metallized terminal and is measured between 0.25 mm and 0.30 mm from terminal tip. dimension l1 is the terminal pull back from package edge, up to 0.1 mm is acceptable. l1 is optional. 5. depopulation is possible in a symmetrical fashion. w y dim min max millimeters a 3.20 3.40 b 3.20 3.40 c 0.85 0.95 d 0.28 0.33 e 1.30 1.50 f 2.55 2.75 g 0.65 bsc h 0.95 1.15 j 0.25 bsc k 0.00 0.05 l 0.35 0.45 m 1.60 1.70 n 1.60 1.70 p 1.28 1.38 r 0.200 0.250 s 0.18 0.23 u 0.20 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTLTD7900N/d ezfet is a trademark of semiconductor components industries, llc (scillc). micro8 is a trademark of international rectifier. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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