Part Number Hot Search : 
IC18F C114T LC5523F UML6NTR S2406 0B27446 D4812 MICRO
Product Description
Full Text Search
 

To Download SMN0470F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 1 of 8 SMN0470F advanced n-ch power mosfet switching regulator application features ? drain-source breakdown voltage: bv dss =700v (min.) ? low gate charge: q g =13nc (typ.) ? low drain-source on resistance: r ds(on) =2.36 ? (max.) ? 100% avalanche tested ? rohs compliant device ordering information part number marking package SMN0470F smn0470 to-220f-3l marking information absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 700 v gate-source voltage v gss ? 30 v drain current (dc) * i d t c =25 ? c 4 a t c =100 ? c 2.53 a drain current (pulsed) * i dm 16 a single avalanche current (note 2) i as 4 a single pulsed avalanche energy (note 2) e as 344 mj repetitive avalanche current (note 1) i ar 4 a repetitive avalanche energy (note 1) e ar 2.9 mj power dissipation p d 29 w junction temperature t j 150 ? c storage temperature range t stg -55~150 ? c * limited only maximum junction temperature auk ymdd sdb20d45 auk ymdd sdb20d45 auk gfymdd smn0470 column 1: manufacturer column 2: production information e.g.) gfymdd -. g: option code (h: halogen free) -. f: factory management code -. ymdd: date code (year, month, date) column 3: device code to-220f-3l g d s
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 4.27 ? c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 700 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 3 4 5 v drain-source cut-off current i dss v ds =700v, v gs =0v - - 1 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =2a - 2 2.36 ? forward transfer conductance (note 3) g fs v ds =10v, i d =2a - 4 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 736 1046 pf output capacitance c oss - 65 92 reverse transfer capacitance c rss - 8.2 12 turn-on delay time (note 3,4) t d(on) v dd =350v, i d =4a, r g =25 ? - 60 139 ns rise time (note 3,4) t r - 73 161 turn-off delay time (note 3,4) t d(off) - 98 216 fall time (note 3,4) t f - 32 73 total gate charge (note 3,4) q g v ds =560v, v gs =10v, i d =4a - 13 18 nc gate-source charge (note 3,4) q gs - 5 - gate-drain charge (note 3,4) q gd - 3 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 4 a source current (pulsed) i sm - - 16 a forward voltage v sd v gs =0v, i s =4a - - 1.4 v reverse recovery time (note 3,4) t rr i s =4a, v gs =0v di f /dt=100a/us - 481 - ns reverse recovery charge (note 3,4) q rr - 2.1 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=40mh, i as =4a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operat ing temperature typical characteristics SMN0470F
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 3 of 8 electrical characteristics curves fig. 1 i d - v ds fig. 2 i d ? v gs fig. 3 r ds(on) - i d fig. 4 i s - v sd fig. 5 capacitance - v ds fig. 6 v gs - q g SMN0470F
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 4 of 8 SMN0470F fig. 7 v dss - t j fig. 8 r ds(on) ? t j fig. 9 i d - t c fig. 10 safe operating area fig. 11 transient thermal impedance
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 5 of 8 fig. 13 resistive switching test circuit & waveform fig. 14 e as test circuit & waveform fig. 12 gate charge test circuit & waveform SMN0470F
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 6 of 8 fig. 15 diode reverse recovery time test circuit & waveform SMN0470F
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 7 of 8 package outline dimensions SMN0470F
rev. date: 23-aug- 11 ksd-t0o103-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SMN0470F


▲Up To Search▲   

 
Price & Availability of SMN0470F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X