95 reflective photo sensors reflective photosensors (photo reflectors) 2.0 0.2 2.0 0.2 mark for indicating emitter side c0.5 3.4 0.3 0.4 2.7 0.2 9.0 1.0 9.0 1.0 chip center 1.8 24 13 4-0.5 0.1 4-0.7 0.5 0.15 pin connection unit : mm 1.5 0.2 32 1 4 *1 input power derating ratio is 1.0 mw/?c at ta 25?c. *2 output power derating ratio is 1.0 mw/?c at ta 25?c. *2 output current measurement method evaporated al glass plate (t = 1mm) v cc r l i f i c 10% 90% t r t f absolute maximum ratings (ta = 25?c) parameter symbol ratings unit input (light reverse voltage (dc) v r 3v emitting diode) forward current (dc) i f 50 ma power dissipation p d *1 75 mw collector current i c 30 ma output (photo collector to emitter voltage v ceo 20 v transistor) emitter to collector voltage v eco 5v collector power dissipation p c *2 75 mw te mperature operating ambient temperature t opr ?5 to +85 ?c storage temperature t stg ?0 to +100 ?c electrical characteristics (ta = 25?c) parameter symbol conditions min typ max unit input forward voltage (dc) v f i f = 50ma 1.3 1.5 v characteristics reverse current (dc) i r v r = 3v 0.01 10 a capacitance between terminals c t v r = 0v, f = 1mhz 30 pf output characteristics collector cutoff current i ceo v ce = 10v 1.0 a collector current i c *1, *2 v cc = 5v, i f = 2ma, r l = 100 ? , d = 1mm 0.46 12.0 ma t ransfer leakage current i d v cc = 5v, i f = 2ma, r l = 100 ? 2.0 a characteristics collector to emitter saturation voltage v ce(sat) i f = 5ma, i c = 0.5ma 1.5 v response time t r *3 , t f *4 v cc = 10v, i c = 1ma, r l = 100 ? 150 s *3 t ime required for the collector current to increase from 10% to 90% of its final value. *4 t ime required for the collector current to decrease from 90% to 10% of its initial value. *1 i c classifications class q r s i c (ma) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0 application detection of paper, film and cloth detection of position and edge detection of rotary positioning liquid level sensor start, end mark detection of magnetic tape ON2280 reflective photosensor features ultraminiature : 2.7 3.4 mm v isible light cutoff resin is used high current-transfer ratio outline onn2280 is a small, thin reflective photosensor consisting of a high efficiency gaas infrared light emitting diode which is integrated with a high sensitivity darlington phototransistor is used as the photodetector in a single resin package. maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
96 reflective photosensors (photo reflectors) ON2280 i f , i c ?ta forward current, collector current i f , i c (ma) 60 50 40 30 20 10 ambient temperature ta (?c ) 0204 06080100 0 ?25 i f ?v f 60 30 20 10 50 40 forward voltage v f (v) forward current i f (ma) 0.4 0.8 1.2 1.6 2.4 2.0 0 0 ta = 25?c v f ?ta 1.6 1.2 0.8 0.4 ambient temperature ta (?c ) forward voltage v f (v) 0204 06080100 0 ?40 ?20 0204 06080100 ?40 ?20 i c ?i f 10 3 10 2 10 1 forward current i f (ma) collector current i c (ma) 10 10 2 10 3 10 ? 1 v cc = 5v ta = 25?c r l = 100 ? d = 1mm i c ?v ce 10 2 10 1 10 ? collector to emitter voltage v ce (v) collector current i c (ma) 11010 2 10 ? 10 ? ta = 25?c relative output current i c (%) i c ?ta 160 120 80 40 ambient temperature ta (?c ) 0 v cc = 5v i f = 2ma r l = 100 ? 110 10 ? t r ?i c 10 collector current i c (ma) rise time t r ( s) 1 10 ? 10 4 10 3 10 2 v cc = 10v ta = 25?c distance d (mm) i c ?d 100 60 40 20 80 relative output current i c (%) 2 46 10 8 0 0 v cc = 5v i f = 2ma 0204 0608 0 100 ?40 ?20 i ceo ?ta 10 2 1 10 ? 10 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? i f i c 10ma 1ma i f = 50ma i f = 10ma 5ma 2ma 1ma 100 ? r l = 1k ? 500 ? d maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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