VSLY5940 www.vishay.com vishay semiconductors rev. 1.2, 29-may-15 1 document number: 84240 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 940 nm, surface emitter technology description as part of the surflight tm portfolio, the VSLY5940 is an infrared, 940 nm emitting di ode based on gaalas surface emitter chip technology with ex treme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? narrow angle of half intensity: ? = 3 ? suitable for high pulse current operation ? good spectral matching with cmos cameras ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? infrared radiation source for operation with cmos cameras ? high speed ir data transmission ? smoke-automatic fire detectors ?ir flash note ? test conditions see table basic characteristics note ? moq: minimum order quantity 22114 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) VSLY5940 600 3 940 10 ordering information ordering code packaging remarks package form VSLY5940 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? VSLY5940-cs21 reel moq: 5000 pcs, 1000 pcs/bulk t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power di ssipation p v 190 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature t ? 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j- std-051, leads 7 mm, soldered on pcb r thja 230 k/w
VSLY5940 www.vishay.com vishay semiconductors rev. 1.2, 29-may-15 2 document number: 84240 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 200 0 102030405060708090100 22116 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 230 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t amb - ambient temperature (c) 22115 i f - forward current (ma) r thja = 230 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.65 1.9 v i f = 1 a, t p = 100 s v f 2.9 v temperature coefficient of v f i f = 1 ma tk vf -1.45 mv/k i f = 10 ma tk vf -1.25 mv/k reverse current i r not designed for reverse operation a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 300 600 900 mw/sr i f = 1 a, t p = 100 s i e 5100 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e 55 mw temperature coefficient of ? e i f = 100 ma tk ? e -0.35 %/k angle of half intensity ? 3 deg peak wavelength i f = 100 ma ? p 920 940 960 nm spectral bandwidth i f = 100 ma ?? 35 nm temperature coefficient of ? p i f = 100 ma tk ? p 0.25 nm/k rise time i f = 100 ma t r 10 ns fall time i f = 100 ma t f 10 ns
VSLY5940 www.vishay.com vishay semiconductors rev. 1.2, 29-may-15 3 document number: 84240 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant intensity vs. angular displacement 100 1000 0.01 0.1 1 10 100 t p - pulse duration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t amb < 50 c i f - forward current (ma) v f - forward voltage (v) 22097 i f - forward current (a) 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 t p = 100 s 1 10 100 1000 10 000 0.001 0.01 0.1 1 22117 i f - forward current (a) i e - radiant intensity (mw/sr) t p = 100 s 0.1 1 10 100 1000 11 0 100 1000 16971 i f - forward current (ma) - radiant power (mw) e - wavelength (nm) i e, rel - relative radiant intensity (%) 0 60 80 100 800 850 900 950 1000 1050 i f = 20 ma 70 90 50 20 40 30 10 22132 0.6 0 0.2 0.4 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i e rel - relative radiant intensity ? - angular displacement
VSLY5940 www.vishay.com vishay semiconductors rev. 1.2, 29-may-15 4 document number: 84240 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters s pecification s according to din technical drawing s not indicated tolerance s 0.1 drawing-no.: 6.544-5385.01-4 i ss ue: 2; 08.03.10 20531 c a 5.75 0.15 35.85 0.5 12.88 0.3 5.4 0.3 chip po s ition 7.6 0.15 8.6 0.3 1.5 0.25 0.75 - 0.12 0.63 2.54 nom. ? 5 0.15 < 0.7 0.5 aera not plane parabolic len s
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