/ , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 GT43 description : v(br)ceo= 300v(min) ? high dc current gain : hfe= 2000(min.)@ lc= 4a * low collector saturation voltage : vce(satr 3.0v(max.)@ lc= 6a applications ? switching for dynamotor excitation ? general purpose power amplifier absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation ffh t~? "7^'p silicon npn darlington power transistor GT43 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat)-1 vce(sat)-2 icbo iebo hpe-1 hpe-2 parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc=10ma;lb=0 lc=1ma;le=0 le=50ma;lc=0 lc=1a;lb=10ma lc=6a; !b=50ma vcb= 400v; ie= 0 veb= tv; lc= 0 lc= 4a; vce= 4v lc= 5ma; vce= 4v min 300 400 7 2000 300 typ. max 1.5 3.0 100 100 unit v v v v v na ua dc current gain safe operating area 30000 10000 .s (0 o 5000 3000 3 o o q 1000 500 ^ - ,' tr - 71 ^r" *c .-"- -?y v . j ,b """-^1 <*- ce ? <, 2.0 1-5 ?-, s ^ v . 0.05 0.1 0.3 0.5 1 3 5 collector current ic (a) 1u 5 3 < 3 tamt o collector current 0 p p w u) in -? tc=25 " > c \^ v s ^ 's ^ ^ s y x \ v 1ms \ \m ^ \ 10 30 50 100 300 collector-emitter voltage vck[v]
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