unisonic technologies co., ltd UT8067 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r210-005.b 9a, 30v, n-channel mosfet ? description the utc UT8067 is an n-channel mosfet, it uses utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, etc. the utc UT8067 is suitable for high-efficiency dc-dc converters, mobile handsets and notebook pcs. ? features * r ds(on) < 33 m ? @ v gs =4.5v, i d =4.5a * high switching speed ? ordering information pin assignment ordering number package 1 2 3 4 5 6 7 8 packing UT8067g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: s: sour ce g: gate d: drain ? marking
UT8067 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r210-005.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous (note 1) i d 9 a drain current pulsed (note 1) i dm 36 a avalanche current i ar 9 a single pulsed avalanche energy (note 2) e as 21 mj power dissipation (t=10s) p d 1.0 w junction temperature t j 150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 0.2mh, i as = 9a, v dd = 24v, r g = 1.2 ? , starting t j = 25c ? thermal characteristics parameter symbol ratings unit junction to ambient (t=10s) ja 125 c/w note: surface mounted on 25.4 mm 25.4 mm 0.8mm fr4 board. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics bv dss i d =10ma, v gs =0v 30 v drain-source breakdown voltage bv dsx i d =10ma, v gs =-20v 15 v drain-source leakage current i dss v ds =30v, v gs =0v 10 a forward v gs =+20v, v ds =0v +0.1 a gate-source leakage current reverse i gss v gs =-20v, v ds =0v -0.1 a on characteristics gate threshold voltage v gs(th) v ds =10v, i d =0.1ma 1.3 2.3 v v gs =4.5v, i d =4.5a 26 33 static drain-source on-state resistance r ds(on) v gs =10v, i d =4.5a 20 25 m ? dynamic parameters input capacitance c iss 690 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v gs =0v, v ds =10v, f=1.0mhz 28 pf switching parameters v dd 24v, v gs =10v, i d =9a 9.5 nc total gate charge q g v dd 24v, v gs =5v, i d =9a 4.7 nc gate to source charge q gs 2.2 nc gate to drain charge q gd v dd 24v, v gs =10v, i d =9a 0.9 nc gate resistance r g v gs =0v, v ds =10v, f=5mhz 3.4 5.1 ? turn-on delay time t d(on) 6.7 ns rise time t r 2.1 ns turn-off delay time t d(off) 15 ns fall-time t f 2.1 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =9a, v gs =0v -1.2 v continuous drain-source current i sd 36 a notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
UT8067 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r210-005.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
UT8067 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r210-005.b ? test circuits and waveforms (cont.) itching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
UT8067 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r210-005.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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