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1.5mhz step-up dc-dc converter ap3012 1 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet general description the ap3012 is a high power, constant frequency, cur- rent mode pwm, inductor based, step-up (boost) con- verter. the converter operates at high frequency (1.5mhz) so that a small, low profile inductor can be used. the ap3012 has built-in overvoltage protection (ovp) to allow the device goes in to shutdown mode when the output voltage exceeds the ovp threshold of 29v. the ap3012 is available in standard sot-23-5 pack- age. features high efficiency up to 81% adjustable output voltage up to 29v shutdown current 1 a typical 1.5mhz switching frequency 36v 500ma rugged integrated bipolar switch built-in soft-start to reduce inrush current dur- ing start-up on-chip overvoltage protection uses low esr ceramic output capacitor uses small inductor applications lcd/oled display bias supply white led driver for lcd display backlights cellular phones figure 1. package type of ap3012 sot-23-5
1.5mhz step-up dc-dc converter ap3012 2 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ap3012 (top view) pin description pin number pin name function 1sw switch pin. connect inductor/di ode here. the output voltage ca n go up to 29v but should not exceed this limit. if the voltage on this pin is higher than the overvoltage protection (ovp) threshold, the device can go into shutdown mode . it can be restarted by a low to high pulse on the shdn pin, or by a power on reset on the v in supply 2 gnd ground pin. connect dire ctly to local ground plane 3 fb feedback pin. internally compares to 1.25v. connect r1 and r2 resist or divider here. calcu- late the output voltage according to the formula: v out =1.25v * (1+r1/r2) 4 shdn shutdown pin. connect to 1.5v or higher to en able device (on), 0.4v or lower to disable device (off) 5v in input supply pin. must be locally bypassed pin configuration k package (sot-23-5) sw fb v in shdn gnd 1 2 34 5
1.5mhz step-up dc-dc converter ap3012 3 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet functional block diagram figure 3. functional block diagram of ap3012 fb shdn v in gnd sw q1 a2 a1 r s q 1.5mhz oscillator ramp generator v ref shutdown 3 5 4 2 1 driver 1.25v ovp soft start r c c c 0.2 ? comparator
1.5mhz step-up dc-dc converter ap3012 4 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet ordering information circuit type package k: sot-23-5 e1: lead free ap3012 - tr: tape and reel package temperature range part number marking id packing type lead free green lead free green sot-23-5 -40 to 85 o c ap3012ktr-e1 ap3012ktr-g1 e6b g6b tape & reel bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green package. g1: green
1.5mhz step-up dc-dc converter ap3012 5 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating cond itions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol min max unit input voltage v in 2.6 16 v operating temperature t op -40 85 o c recommended operating conditions absolute maximum ratings (note 1) parameter symbol value unit input voltage v in 20 v sw voltage 38 v fb voltage 5v shdn voltage 16 v thermal resistance (junction to atmosphere, no heat sink) r ja 265 o c/w operating junction temperature 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c esd (machine model) 250 v esd (human body model) 2000 v
1.5mhz step-up dc-dc converter ap3012 6 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet (v in =3v, v shdn =3v , t a =25 o c, unless otherwise specified.) parameter symbol conditions min typ max unit minimum operating volt- age 2.6 v maximum operating volt- age 16 v feedback voltage v fb v in =5v, v out =24v, i out =30ma 1.17 1.25 1.33 v fb pin bias current v fb =1.25v 10 45 100 na supply current i cc v shdn =v fb =v in , no switching 2.5 3.5 ma supply current i q v shdn =0v, v fb =0v 0.1 1.0 a switching frequency f 1.1 1.5 1.9 mhz maximum duty cycle d max 85 90 % switching current limit duty cycle=80% 500 ma switch vcesat v cesat i sw =250ma 300 mv switch leakage current v sw =5v 0.01 5 a shdn voltage high (on) v th 1.5 v shdn vo l t a g e l o w ( o f f ) v tl 0.4 shdn pin bias current 55 a ovp voltage threshold v ovp 29 v soft-start time 550 s thermal resistance (junction to case) jc 69.57 o c/w electrical characteristics
7 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet 1.5mhz step-up dc-dc converter ap3012 typical performance characteristics figure 4. quiescent current vs. input voltage figure 5. shdn pin bias current figure 6. switching frequency figure 7. feedback bias current 0 4 8 12 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 quiescent current (ma) v in (v) -50 o c 25 o c 100 o c -50 -25 0 25 50 75 100 0.0 0.4 0.8 1.2 1.6 2.0 switching frequency (mhz) junction temperature ( o c) -50 -25 0 25 50 75 100 0 10 20 30 40 50 60 70 feedback bias current (na) junction temperature ( o c) -50 -25 0 25 50 75 100 40 80 120 160 200 240 280 320 shdn pin bias current ( a) junction temperature ( o c) shdn=10v shdn=3.6v shdn=3v shdn=2.7v vs. junction temperature vs. junction temperature vs. junction temperature
1.5mhz step-up dc-dc converter ap3012 8 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet figure 9. switching current limit vs. duty cycle typical performance ch aracteristics (continued) figure 10. feedback voltage vs. junction temperat ure figure 11. efficiency vs. output current figure 8. efficiency vs. junction temperature 0 5 10 15 20 25 30 35 40 45 60 65 70 75 80 85 efficiency (%) output current (ma) v in =3.0v v in =3.6v v in =4.2v v in =5.0v v out =24v l=10 h -50 -25 0 25 50 75 100 1.24 1.25 1.26 1.27 1.28 1.29 v in =5v v out =24v i out =30ma feedback voltage (v) junction temperature ( o c) 020406080100 0 200 400 600 800 1000 1200 switching current limit (ma) duty cycle (%) -50 -25 0 25 50 75 100 50 55 60 65 70 75 80 85 v in =5v v out =24v i out =30ma efficiency (%) junction temperature ( o c)
9 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet 1.5mhz step-up dc-dc converter ap3012 typical application figure 12. lcd/oled display bias driver typical circuit note: v out =1.25*(1+r1/r2)=1.25*19.2=24v v in sw shdn ap3012 fb gnd v in l1 10 ? 5v off on c1 1 f c2 1 f d1 1n5819 r2 5.1k r1 92.82k rload v out 24v c: x5r or x7r dielectric l: sumida cdth 3d14/hpnp-100nc or equivalent
1.5mhz step-up dc-dc converter ap3012 10 may 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet sot-23-5 unit: mm(inch) mechanical dimensions 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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