1. product profile 1.1 general description 400 w ldmos power transistor for base st ation applications at frequencies from 716mhz to 960mhz. [1] 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; 10 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? device can operate with the supply current delivered through the video leads ? high efficiency ? low thermal resistance providing excellent thermal stability ? designed for broadband operation ? lower output capacitance for improved performance in doherty applications ? decoupling leads to enable improved video bandwidth (45 mhz typical) ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? design optimized for gull-wing ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier applications in the 716 mhz to 960 mhz frequency range blf8g09ls-400pw; BLF8G09LS-400PGW power ldmos transistor rev. 3 ? 24 march 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab pr oduction test circuit, tested on straight lead device. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 716 to 728 3400 28 95 20.6 30 ? 35 [1]
blf8g09ls-400pw_8g09ls-400pgw all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v . 2014. all rights reserved. product data sheet rev. 3 ? 24 march 2014 2 of 17 nxp semiconductors blf8g09ls-400p(g)w power ldmos transistor 2. pinning information [1] connected to flange. [2] device can operate with the supply current delivered through the combined decoupling leads. 3. ordering information table 2. pinning pin description simplified outline graphic symbol blf8g09ls-400pw (sot1242b) 1drain1 2drain2 3gate1 4gate2 5source [1] 6 decoupling1 [2] 7 decoupling2 [2] 8n . c . 9n . c . BLF8G09LS-400PGW (sot1242c) 1d r a i n 1 2d r a i n 2 3g a t e 1 4g a t e 2 5s o u r c e [1] 6 decoupling1 [2] 7 decoupling2 [2] 8n . c . 9n . c . d d d d d d table 3. ordering information type number package name description version blf8g09ls-400pw - earless flanged ceramic package; 8 leads sot1242b BLF8G09LS-400PGW - earless flanged ceramic package; 8 leads sot1242c
blf8g09ls-400pw_8g09ls-400pgw all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v . 2014. all rights reserved. product data sheet rev. 3 ? 24 march 2014 3 of 17 nxp semiconductors blf8g09ls-400p(g)w power ldmos transistor 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics 6. characteristics table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 95 w 0.26 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =3 ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 300 ma 1.5 1.8 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 1700 ma 1.7 2 2.5 v i dss drain leakage current v gs =0v; v ds =28v --2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 55 - a i gss gate leakage current v gs =11 v; v ds =0v --280na g fs forward transconductance v ds =10v; i d =15a - 26 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 12.25 a -0.06- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 dpch; f 1 = 718.5 mhz; f 2 = 723.5 mhz; f 3 = 720.5 mhz; f 4 = 725.5 mhz; rf performance at v ds =28v; i dq = 3400 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit, tested on straight lead device. symbol parameter conditions min typ max unit g p power gain p l(av) = 95 w 18.8 20.6 - db rl in input return loss p l(av) =95w - ? 19 ? 11 db ? d drain efficiency p l(av) =95w 26 30 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =95w - ? 35 ? 32 dbc
blf8g09ls-400pw_8g09ls-400pgw all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v . 2014. all rights reserved. product data sheet rev. 3 ? 24 march 2014 4 of 17 nxp semiconductors blf8g09ls-400p(g)w power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the blf8g09ls-400pw and BLF8G09LS-400PGW are capable of withstanding a load mismatch corresponding to vswr = 7 : 1 through all phases under the following conditions: v ds =28v; i dq = 3400 ma; 2-carrier w-cdma signal; p l =200w; f = 716 mhz; 5 mhz carrier spacing; 46 % clipping. 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 vbw in class-ab operation the blf8g09ls-400pw and BLF8G09LS-400PGW show 45 mhz (typical) video bandwidth in class-ab test circuit in 722 mhz band at v ds = 28 v and i dq = 3400 ma. table 8. typical impedance measured load-pull data for the to p-half of the push-pull package; i dq =1800ma; v ds =28v; t case =25 ? c, water cooled. f z s [1] z l [1] (mhz) (? ) (? ) blf8g09ls-400pw (straight lead) 720 1.26 ? j2.89 1.8 ? j1.94 757 1.44 ? j3.82 2 ? j1.6 769 1.55 ? j3.64 1.9 ? j1.75 805 1.7 ? j4.5 1.5 ? j1.3 BLF8G09LS-400PGW (gull-wing) 720 1.37 ? j3 1.7 ? j2.1 757 1.4 ? j3.6 1.6 ? j2.3 769 1.3 ? j3.9 1.7 ? j2.2 805 1.6 ? j4.3 1.48 ? j1.97 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf8g09ls-400pw_8g09ls-400pgw all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v . 2014. all rights reserved. product data sheet rev. 3 ? 24 march 2014 5 of 17 nxp semiconductors blf8g09ls-400p(g)w power ldmos transistor 7.4 test circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.66; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout table 9. list of components for test circuit see figure 2 . component description value remarks c1, c2, c3, c8, c9 multilayer ceramic chip capacitor 100 pf atc 100a c4, c5 multilayer ceramic chip capacitor 9.1 pf atc 100a c6, c7 multilayer ceramic chip capacitor 10 pf atc 100a c10, c11, c13, c17 multilayer ceramic chip capacitor 1 ? f, 50 v murata c12, c16 multilayer ceramic chip capacitor 100 nf, 50 v murata c14, c15, c18, c19 multilayer ceramic chip capacitor 10 ? f, 50 v murata c20, c21 multilayer ceramic chip capacitor 5.1 pf atc 100a c22 multilayer ceramic chip capacitor 82 pf atc 100b c23, c24 electrolytic capacitor 470 ? f, 6 3 v c25, c26 multilayer ceramic chip capacitor 3 pf atc 100a r1 resistor 10 ? r2, r3, r4, r5 resistor 5.1 ? d d d p p p p p p & |