221 west industry court 3 deer park, ny 11729 3 (631) 586 7600 fax (631) 242 9798 world wide web site - http://www.sensitron.com e - mail address - sales@sensitron.com sensitron semiconductor technical data data sheet 4205, rev - 600 volt, 70 amp igbt device very high speed with ultrafast reverse recovery diode electrical characteristics (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t igbt specifications collector to emitter breakdown voltage i c = 250 m a, v ge = 0v bv ces 600 - - v continuous collector current t c = 25 o c t c = 90 o c i c - - 45 (1) 30 a pulsed collector current, 1msec i cm - - 150 a gate to emitter voltage v ge - - +/ - 20 v gate - emitter leakage current, v ge = +/ - 20v i ges - - +/ - 100 na gate threshold voltage, i c = 25 0 m a v ge(th) 2.5 - 5.0 v zero gate voltage collector current v ce = 600 v, v ge =0v t i =25 o c v ce = 480 v, v ge =0v t i =125 o c i ces - - - - 0.2 3.0 ma ma collector to emitter saturation voltage, t c = 25 o c i c = 24a, v ge = 15v, t c = 125 o c v ce(sat) - 2.2 2.0 2.5 - v input capacitance output capacitance reverse transfer cap. v ce = 25 v, v ge = 0 v, f = 1 mhz c ies c oes c res - 1500 145 40 - pf turn on delay time rise time turn off delay time fa ll time turn off energy loss (t j = 125 o c, i c = 24a, v ge = 15v, inductive load, v cc = 400 v, r g = 5 w t d(on) t r t d(off) t f e off e on - - - - - 13 17 130 80 0.38 0.22 - - - - - nsec mj mj maximum thermal resistance r q jc - - 0.85 o c/w maximum and st orage junction temperature t jmax - 55 - 150 o c SHD724602
221 west industry court 3 deer park, ny 11729 3 (631) 586 7600 fax (631) 242 9798 world wide web site - http://www.sensitron.com e - mail address - sales@sensitron.com sensitron technical data data sheet 4205, rev - ultrafast diode rating and characteristics parameter symbol min typ max unit diode peak inverse voltage piv 600 - - v continuous forward current , t c = 25 o c t c = 90 o c i f - - 45 (1) 30 a forward surge current, t p = 8.3 msec i fsm - - 300 a diode forward voltage, i f = 30a t c = 25 o c t c = 125 o c v f - - 1.7 - 1.8 1.7 v diode reverse recovery time diode reverse recovery current t c = 100 o c (i f =30a, v rr =100v, di/dt=100 a/ m s) t rr i rm - - 100 - 140 4 nsec a maximum thermal res istance r q jc - - 1.0 o c/w maximum and storage junction temperature t jmax - 55 - 150 o c (1) current is limited by package leads to 45a; die ratings are 70a. schematic diagram: package drawing: (to258) SHD724602 g e c .270 .240 (6.86 6.10) .045 .035 (1.14 0.89) .140(3.56) bsc .550 .530 (13.97 13.46) .695 .685 (17.65 17.40) .835 .815 (21.21 20.70) .707 .697 (17.96 17.70) 1.302 1.202 (33.07 30.53) .065 .055 (1.65 1.40) 3 places .200(5.08) bsc 2 places .165 .155 (4.19 3.94) dia. e (2) c (3) g ( 1) 1 2 3
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.
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