pnp silicon planar medium power transistors issue 2 ? july 94 features * 100 volt v ceo * 2 amp continuous current * low saturation voltage *p tot =1 watt absolute maximum ratings. parameter symbol ztx752 ztx753 unit collector-base voltage v cbo -100 -120 v collector-emitter voltage v ceo -80 -100 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -2 a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx752 ztx753 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo -100 -120 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -80 -100 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -10 -0.1 -10 m a m a m a m a v cb =-80v v cb =-100v v cb =-80v, t amb =100c v cb =-100v, t amb =100c emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.17 -0.30 -0.3 -0.5 -0.17 -0.30 -0.3 -0.5 v v i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1 -0.8 -1 v ic=-1a, v ce =-2v* ztx752 ztx753 3-260 c b e e-line to92 compatible electrical characteristics (at t amb = 25c). parameter symbol ztx752 ztx753 unit conditions. min. typ. max. min. typ. max. transition frequency f t 100 140 100 140 mhz i c =-100ma, v ce =-5v f=100mhz switching times t on 40 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 600 600 ns output capacitance c obo 30 30 pf v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ztx752 ztx753 -40 0.0001 derating curve t -temperature (c) m ax po we r d issi ati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-261 ztx752 not recommended for new design please use ztx753
pnp silicon planar medium power transistors issue 2 ? july 94 features * 100 volt v ceo * 2 amp continuous current * low saturation voltage *p tot =1 watt absolute maximum ratings. parameter symbol ztx752 ztx753 unit collector-base voltage v cbo -100 -120 v collector-emitter voltage v ceo -80 -100 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -2 a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx752 ztx753 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo -100 -120 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -80 -100 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -10 -0.1 -10 m a m a m a m a v cb =-80v v cb =-100v v cb =-80v, t amb =100c v cb =-100v, t amb =100c emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.17 -0.30 -0.3 -0.5 -0.17 -0.30 -0.3 -0.5 v v i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1 -0.8 -1 v ic=-1a, v ce =-2v* ztx752 ztx753 3-260 c b e e-line to92 compatible electrical characteristics (at t amb = 25c). parameter symbol ztx752 ztx753 unit conditions. min. typ. max. min. typ. max. transition frequency f t 100 140 100 140 mhz i c =-100ma, v ce =-5v f=100mhz switching times t on 40 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 600 600 ns output capacitance c obo 30 30 pf v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ztx752 ztx753 -40 0.0001 derating curve t -temperature (c) m ax po we r d issi ati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-261 ztx752 not recommended for new design please use ztx753
ztx752 ztx753 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) 0.01 0.1 10 1 10 0 0.1 0.2 0.4 0.5 0.3 0.6 0.001 0.0001 i c /i b =10 i c - collector current (amps) h fe v i c h f e - gain 0.01 0.1 1 v ce =2v 125 175 225 75 0 i c - collector current (amps) v be(sat) v i c v b e (sat) - (v olts) 0.6 0.8 1.0 1.2 1.4 0.01 10 0.1 1 0.0001 0.001 i c /i b =10 i c - collector current (amps) v be(on) v i c v be - (v olts) 0.6 0.8 1.0 1.2 0.4 0.01 10 0.1 1 0.0001 0.001 v ce =2v switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 ts tf td tr ts ns 0 td tr tf ns 100 120 40 20 60 80 140 0 1000 1200 400 200 600 800 1400 i c - co l le c to r cur r e n t ( am ps) v ce - collector voltage (volts) safe operating area 1 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s zt x 7 5 2 zt x 7 5 3 0.1 3-262 ztx752 not recommended for new design please use ztx753
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