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january 2012 doc id 17120 rev 3 1/14 14 stac2932f rf power transistor hf/vhf/uhf rf power n-channel mosfets features gold metallization excellent thermal stability common source push-pull configuration p out = 300 w min. with 20 db gain @ 175 mhz in compliance with the 2002/95/ec european directive st air cavity packaging technology - stac ? package description the stac2932f is a gold metallized n-channel mos field-effect rf power transistor, intended for use in 50 v dc large signal applications up to 250 mhz. the stac2932f benefits from the latest generation of efficient, patent-pending package technology, otherwise known as stac ? . figure 1. pin connection stac244f air cavity 1. drain 2. gate 3. source (bottom side) 1 1 2 2 3 table 1. device summary order code marking base qty. package packaging STAC2932FW stac2932f (1) 20 stac244f tray 1. for more details please refer to chapter 7: marking, packing and shipping specifications . www.st.com
contents stac2932f 2/14 doc id 17120 rev 3 contents 1 electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 12 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 stac2932f electrical data doc id 17120 rev 3 3/14 1 electrical data 1.1 maximum ratings 1.2 thermal data table 2. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss (1) 1. t j = 150 c drain source voltage 125 v v dgr drain-gate voltage (r gs = 1 m )125v v gs gate-source voltage 20 v i d drain current 40 a p diss power dissipation 625 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r thjc junction - case thermal resistance 0.28 c/w electrical characteristics stac2932f 4/14 doc id 17120 rev 3 2 electrical characteristics (t case = 25 o c) 2.1 static 2.2 dynamic table 4. static (per side) symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 100 ma 125 v i dss v gs = 0 v v ds = 50 v 50 a i gss v gs = 20 v v ds = 0 v 250 na v gs(q) v ds = 10 v i d = 250 ma 1.5 2.5 4.0 v v ds(on) v gs = 10 v i d = 10 a 3.0 v g fs v ds = 10 v i d = 5 a 5 s c iss v gs = 0 v v ds = 50 v f = 1 mhz 468 pf c oss 206 pf c rss 16 pf table 5. dynamic symbol test conditions min. typ. max. unit p out v dd = 50 v, i dq = 2 x 250 ma, p in = 4 w, f = 175 mhz 300 390 w h d v dd = 50 v, i dq = 2 x 250 ma, p in = 4 w, f = 175 mhz 55 68 % stac2932f impedance doc id 17120 rev 3 5/14 3 impedance figure 2. current conventions note: measured gate to gate and drain to drain, respectively. table 6. impedance data freq. (mhz) z in ( )z dl ( ) 175 mhz 2.0 - j2.0 3.5 + j5.2 typical performance stac2932f 6/14 doc id 17120 rev 3 4 typical performance figure 3. capacitances vs drain supply voltage figure 4. output power vs drain supply voltage # a p a c i t a n c e s p & |