vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power phase control thyristors (stud version), 25 a features ? improved glass passivation for high reliability and exceptional stability at high temperature ? high di/dt and dv/dt capabilities ? standard package ? low thermal resistance ? metric threads version available ? types up to 1200 v v drm /v rrm ? designed and qualified for in dustrial and consumer level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? medium power switching ? phase control applications ? can be supplied to meet stri ngent military, aerospace and other high reliability requirements electrical specifications notes (1) units may be broken over non-repetitively in the off-state direction without damage, if di /dt does not exceed 20 a/s (2) for voltage pulses with t p ? 5 ms product summary package to-208aa (to-48) diode variation single scr i t(av) 25 a v drm /v rrm 100 v to 1200 v v tm 1.70 v i gt 60 ma t j -65 c to 125 c to-208aa (to-48) major ratings and characteristics parameter test conditions values units i t(av) 25 a t c 85 c i t(rms) 40 a i tsm 50 hz 420 a 60 hz 440 i 2 t 50 hz 867 a 2 s 60 hz 790 v drm /v rrm 100 to 1200 v t q typical 110 s t j -65 to 125 c voltage ratings type ? number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage (1) v v rsm , maximum non-repetitive peak voltage (2) v i drm /i rrm maximum at t j = t j maximum ma vs-25ria 10 100 150 20 20 200 300 10 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300
vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ?t q = 10 s up to 600 v, t q = 30 s up to 1600 v availa ble on special request note (1) available with: dv/dt = 1000 v/s, to complete code add s90 i.e. 25ria120s90 ? absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 sinusoidal conduction 25 a 85 c maximum rms on-state current i t(rms) 40 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 420 a t = 8.3 ms 440 t = 10 ms 100 % v rrm reapplied 350 t = 8.3 ms 370 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 867 a 2 s t = 8.3 ms 790 t = 10 ms 100 % v rrm reapplied 615 t = 8.3 ms 560 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied, ? t j = t j maximum 8670 a 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.99 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.40 low level value of ? on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 10.1 m ? high level value of ? on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 5.7 maximum on-state voltage v tm i pk = 79 a, t j = 25 c 1.70 v maximum holding current i h t j = 25 c, anode supply 6 v, resistive load 130 ma latching current i l 200 switching parameter symbol test conditions values units maximum rate of rise ? of turned-on current v drm ? 600 v di/dt t j = t j maximum, v dm = rated v drm ? gate pulse = 20 v, 15 ? , t p = 6 s, t r = 0.1 s maximum ? i tm = (2 x rated di/dt) a 200 a/s v drm ? 800 v 180 v drm ? 1000 v 160 v drm ? 1600 v 150 typical turn-on time t gt t j = 25 c, at rated v drm /v rrm , t j = 125 c 0.9 s typical reverse recovery time t rr t j = t j maximum, i tm = i t(av) , t p > 200 s, ? di/dt = - 10 a/s 4 typical turn-off time t q t j = t j maximum, i tm = i t(av) , t p > 200 s, v r = 100 v, ? di/dt = - 10 a/s, dv/dt = 20 v/s linear to 67 % v drm , ? gate bias 0 v to 100 w 110 blocking parameter symbol test conditions values units maximum critical rate of rise ? of off-state voltage dv/dt t j = t j maximum linear to 100 % rated v drm 100 v/s t j = t j maximum linear to 67 % rated v drm 300 (1)
vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum 8.0 w maximum average gate power p g(av) 2.0 maximum peak positi ve gate current i gm t j = t j maximum 1.5 a maximum peak negati ve gate voltage -v gm t j = t j maximum 10 v dc gate current required to trigger i gt t j = - 65 c maximum required gate trigger ? current/voltage are the lowest value which will trigger all units ? 6 v anode to cathode applied 90 ma t j = 25 c 60 t j = 125 c 35 dc gate voltage required to trigger v gt t j = - 65 c 3.0 v t j = 25 c 2.0 t j = 125 c 1.0 dc gate current not to trigger i gd t j = t j maximum, v drm = rated value 2.0 ma dc gate voltage not to trigger v gd t j = t j maximum, v drm = rated value maximum gate current/voltage ? not to trigger is the maximum ? value which will not trigger any ? unit with rated v drm anode to cathode applied 0.2 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction ? and storage temperature range t j , t stg - 65 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 0.75 k/w maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth, flat and greased 0.35 allowable mounting torque non-lubricated threads 3.4 + 0 - 10 % (30) n m (lbf ?? in) lubricated threads 23 + 0 - 10 % (20) approximate weight 14 g 0.49 oz. case style see dimensions - link at the end of datasheet to-208aa (to-48) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.17 0.13 t j = t j maximum k/w 120 0.21 0.22 90 0.27 0.30 60 0.40 0.42 30 0.69 0.70
vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 1 - current ratings characteristics fig. 2 - on-state powe r loss characteristics fig. 3 - on-state powe r loss characteristics 80 90 100 110 120 130 0 5 10 15 20 25 30 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle 25ria series r (dc) = 0.75 k/w thjc 80 90 100 110 120 130 0 10203040 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 25ria series r (dc) = 0.75 k/w thjc 0 255075100125 maximum allowable ambient temperature (c) r = 1 k / w - d e l t a r t h s a 2 k / w 3 k / w 4 k / w 5 k / w 7 k / w 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 rms limit conduction angle 180 120 90 60 30 ma xi mum ave rag e on- st a te powe r l os s ( w) average on-state current (a) 25ria series t = 125c j 0255075100125 maximum allowable ambient temperature (c) 2 k / w 7 k / w 5 k / w 4 k / w 3 k / w r = 1 k/w- d elt ar t h s a 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 25ria series t = 125c j
vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 4 - maximum non-repetitive surge current fig. 5 - maximu m non-repetitive surge current fig. 6 - forward voltage drop characteristics fig. 7 - thermal impedance z thjc characteristics 175 200 225 250 275 300 325 350 375 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 25ria series 150 175 200 225 250 275 300 325 350 375 400 425 450 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maxi mum non repetitive surge cur rent versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rrm j 25ria series rated v reapplied 1 10 100 1000 0.5 1 1.5 2 2.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) 25ria series t = 125c j 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc 25ria series transient thermal impedance z (k/w) steady state value r = 0.75 k/w (dc operation) thjc
vs-25ria series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 93701 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse tr<=1 s, tp >= 6 s rated di/dt : 10v, 20ohms <=30% rated di/dt : 10v, 65ohms (1) pgm = 16w, tp = 4ms (2) pgm = 30w, tp = 2ms (3) pgm = 60w, tp = 1ms (4) pgm = 60w, tp = 1ms tr <=0.5 s, tp >= 6 s (3) (4) 25ria series frequency limited by pg(av) tj = -65 c tj = 25 c tj = 125 c - current code - voltage code x 10 = v rrm (see voltage ratings table) - none = stud base to-208aa (to-48) 1/4 " 28unf-2a m = stud base to-208aa (to-48) m6 x 1 - critical dv/dt: none = 300 v/s (standard value) s90 = 1000 v/s (special selection) - essential part number device code 5 1 3 2 4 25 ria 120 m s90 3 4 6 5 2 vs- 6 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95333
document number: 95333 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 07-jul-08 1 to-208aa (to-48) outline dimensions vishay semiconductors dimensions in millimeters (inches) 1/4"-28unf-2a for metric device m6 x 1 45 ? 3.9/4.1 (? 0.15/0.16) ? 15.5 (? 0.61) ? 1.7/1.8 (? 0.06/0.07) 12.8 max. (0.5 max.) 22.2 max. (0.87 max.) 30.2 max. (0.18 max.) 3.1/3.3 (0.12/0.13) 1.24/1.44 (0.04/0.05) 10.7/11.5 (0.42/0.45) across flats 13.8/14.3 (0.54/0.56)
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