pnp silicon planar medium power high current transistor issue 3 ? june 94 features * 0.5 amp continuous current * up to 1.5 amps peak current * very low saturation voltage * excellent gain characteristics up to 1 amp * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -6 v peak pulse current i cm -1.5 a continuous collector current i c -0.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 -600 v i c =-100 m a collector-emitter breakdown voltag v (br)cer -400 -600 v ic=-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -400 -550 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -100 -150 -300 -150 -200 -400 mv mv mv i c =-10ma, i b =-1ma* i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* base-emitter saturation voltage v be(sat) -790 -900 mv i c =-500ma, i b =-100ma* e-line to92 compatible 3-330 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) -690 -800 mv ic=-500ma, v ce =-10v* static forward current transfer ratio h fe 100 100 10 200 200 20 300 i c =-10ma, v ce =-10v* i c =-500ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 19 pf v cb =-20v, f=1mhz switching times t on t off 104 2400 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX958 ZTX958 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-331
pnp silicon planar medium power high current transistor issue 3 ? june 94 features * 0.5 amp continuous current * up to 1.5 amps peak current * very low saturation voltage * excellent gain characteristics up to 1 amp * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -6 v peak pulse current i cm -1.5 a continuous collector current i c -0.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 -600 v i c =-100 m a collector-emitter breakdown voltag v (br)cer -400 -600 v ic=-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -400 -550 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -100 -150 -300 -150 -200 -400 mv mv mv i c =-10ma, i b =-1ma* i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* base-emitter saturation voltage v be(sat) -790 -900 mv i c =-500ma, i b =-100ma* e-line to92 compatible 3-330 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) -690 -800 mv ic=-500ma, v ce =-10v* static forward current transfer ratio h fe 100 100 10 200 200 20 300 i c =-10ma, v ce =-10v* i c =-500ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 19 pf v cb =-20v, f=1mhz switching times t on t off 104 2400 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX958 ZTX958 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-331
0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v o lts ) -55c +25c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - normalised gain v b e (sat) - ( v olts) v b e - ( v olts ) i c - collector current (amps) i c /i b =5 i c /i b =20 i c /i b =5 -55c +25c +100c +175c i c /i b =10 +100c +25c -55c v ce =10v -55c +25c +100c +175c v ce =10v 300 200 100 h fe - typical gain v ce - collector voltage (volts) safe operating area 1 1000 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 ZTX958 3-332
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