bay linear, inc 2478 armstrong street, livermore, ca 94550 tel: (925) 606-5950, fax: (925) 940- 9556 www.baylinear.com power mosfet irf820 advance information ordering information device package temp. irl820t to-220 0 to 150 c IRL820S to-263 ( d 2 ) 0 to 150 c absolute maximum rating parameter max unit i d @ t c =25 c continuous drain current, v gs @10v 2.5 i d @ t c =100 c continuous drain current, v gs @10v 1.6 i dm pulsed drain current (1) 8.0 a p d @ t c =25 c power dissipation 50 w linear derating factor 0.40 linear derating factor ( pcb mount, d 2 ) 0.025 w/ c v gs gate-to- source voltage 20 v e as single pulse avalanche energy 210 mj i ar avalanche current (1) 2.5 a e ar repetitive avalanche energy (1) 5.0 mj dv/dt peak diode recovery dv/dt (3) 3.5 v/ns t j , t stg junction & storage temperature range ? 55 to +150 soldering temperature, for 10 seconds 300 (1.6mm from case) c thermal resistance parameter min typ max units r jc junction-to case - - 2.5 r cs case-to-sink, flat, greased surface (to-220) - 0.50 r ja junction-to ambient ( pcb mount, d 2 ) - - 40 r ja junction-to ambient - - 62 c/w description the bay linear mosfet?s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. the to-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. also, available in a d 2 surface mount power package with a power dissipation up to 2 watts. features ? dynamic dv/dt rating ? repetitive avalanche rated ? fast switching ? ease of paralleling ? simple drive requirements v dss = 500v r ds (on) = 3.0 ? i d =2.5a bay linear bay linear bay linear bay linear linear excellence
bay linear, inc 2478 armstrong street, livermore, ca 94550 tel: (925) 606-5950, fax: (925) 940- 9556 www.baylinear.com irf820 electrical characteristics ( t c = 25 c unless otherwise specified) symbol parameter conditions min typ max units v (br)dss drain-to-source breakdown voltage v gs = 0v, i d = 250 a 500 v v (br)dss / ? ? ? ? t j breakdown voltage temperature coefficient reference to 25 c, i d = 250 a - 0.59 - v/ c i d(on) on-state drain current (note 2) v gs > i d(on) x r ds(on) max 2.5 a r ds(on) static drain-to-source on-resistance v gs =10v, i d = 1.5a (note 4) 3.0 ? ? ? ? v gs(th) gate threshold voltage v ds = v gs, i d = 250 a 2.0 - 4.0 v g fs forward transconductance v ds = 50v, i d = 1.5a 1.5 - - s v ds = 500v, v gs = 0v 25 i dss drain-to-source leakage current v ds = 400v, v gs = 0v, t c = 125 c - - 250 a gate-to-source forward leakage v gs = 20v 100 i gss gate-to-source reverse leakage v g = -20v - - -100 na q g total gate charge - - 24 q qs gate-to-source charge - - 3.3 nc q gd gate-to-drain (?miller?) charge i d = 2.1a v ds = 400v v gs = 10v (note 4) 13 nc t d ( on) turn-on delay time - 8.0 - t r rise time - 8.6 - t d (off) turn -off delay time - 33 - t f fall time v dd = 250v i d = 2.1a r g = 18 ? r d = 100 ? (note 4) - 16 - ns l d internal drain inductance - 4.5 - l s internal source inductance between lead 6mm (0.25in.) from package and center or die contact - 7.5 - nh c iss input capacitance - 360 - c oss output capacitance - 92 - c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1.0mhz - 37 - pf source-drain rating characteristics symbol parameter conditions min typ max units i s continuous source current (body diode) - - 2.5 i sm pulsed source current (body diode) (note 1) mosfet symbol showing the integral reverse p-n junction diode. - - 8.0 a v sd diode forward voltage (4) t j =25 c , i s =2.5a,v gs =dv - - 1.6 v t rr reverse recovery time - - 520 ns q rr reverse recovery charge t j =25 c, i f =2.1a di/dt=100a/ s (note 4) - 0.70 1.4 c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by (l s +l d ) notes: 1. repetitive rating; pulse width limited by max. junction temperature. 2a. v dd = 50v, starting tj = 25 c, l = 440 h r g = 25 ? , i as = 28a 3. i sd 2.5a, di/dt 50a/ s, v dd v (br)dss , t j 150 c 4. pulse with 300 s; duty cycle 2%
bay linear, inc 2478 armstrong street, livermore, ca 94550 tel: (925) 606-5950, fax: (925) 940- 9556 www.baylinear.com advance information - these data sheets contain descriptions of products that are in development. the specifications are based on the engineering ca lculations, computer simulations and/ or initial prototype evaluation. preliminary information - these data sheets contain minimum and maximum specifications that are based on the initial device characterizations. these lim its are subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges. the application circuit examples are only to explain the representative applications of the devices and are not intended to gua rantee any circuit design or permit any industrial property right to other rights to execute. bay linear takes no responsibility for any problems related to any industrial property right resulting from the use of the contents shown in the data book. typical parameters can and do vary in different applications. customer?s technical experts must validate all operating parameters including ? typical? for each customer applic ation. life support and nuclear policy bay linear products are not authorized for and should not be used within life support systems which are intended for surgical implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications wi thout the specific written consent of bay linear president.
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