pje8550 pnp epitaxial silicon transistors 1-3 2002/01.rev.a o utput amplifier o f po rtable radio in clas s b pus h-pull o peratio n complement to pje8050 collector current ic=-0.5a collector dissipation pc=0.625w(tc=25 c) characteristic symbol test condition min typ max unit collector-base breakdown voltage collector- emitter brea kdown voltage emitter-base brea kdown voltage collector cutoff current emitter cutoff current dc current gain collector-emitter saturation voltage base-emitter saturation voltage current gain-bandwidth product bv cbo bv ceo bv ebo i cbo i ebo h ef1 h ef2 v ce(sat) v be(sat) f t ic=-100 a,i e =0 ic=-1ma,i b =0 i e =-100 a,i c =0 v cb =-20v,i e =0 v eb =-3v,ic=0 v ce =-1v,i c =-50 ma v ce =-1v,i c =-500ma ic=-500 ma,i b =-50 ma ic=-500 ma,i b =-50 ma v ce =-10v,ic=-50ma -20 -20 -5 100 40 220 -100 -100 400 -0.6 -1.2 v v v na na v v mhz classification b c d e hfe(1) 85-160 120-210 180-300 380-600 characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) collector dissipation junction temperature storage t emperature v cbo v ceo v ebo i c p c t j tstg -20 -20 -5 -0.5 0.625 150 -55~150 v v v a w c c device operating temperature package PJE8550CT -20 +85 to-92 absolute maximum ratings (t a = 25 c) electrical characteristics (t a=25 c) h fe (1) classification pin: 1.emitter 2. colletor 3. base to-92 ordering information
pje8550 pnp epitaxial silicon transistors 2-3 2002/01.rev.a static characteristic base-emitter on voltage current gain-bandwidth product dc current gain base-emitter sat uration voltage collector-emitter sat uration voltage collector output capacit ance
pje8550 pnp epitaxial silicon transistors 3-3 2002/01.rev.a
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