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chu2299 - 99f rohs compliant ref. dschu22992019 - 19 jan 12 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 40 - 44ghz up converter gaas monolithic microwave ic description the chu2299 - 99f is an up converter multifunction chip, which integrate s lo x4 multiplier, a balanced col d fet mixer and a rf amplifier with gain control . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufa ctured with a power phemt process, 0.1 5m gate length, via holes through the substra te, air bridges and electron beam gate lithography. it is available in chip form . main features main characteristics tamb.= +25c symbol parameter min typ max unit f rf rf frequency range 40 44 ghz f lo lo frequency range 9.5 11.5 ghz g c conversion gain 5 db if lo_in gm g3 gx dx da rf_out x4 if at ga if lo_in gm g3 gx dx da rf_out x4 if if at ga 0 1 2 3 4 5 6 7 38 40 42 44 46 48 50 rf_frequency (ghz) conversion gain (db) infradyne supradyne
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c symbol parameter min typ max unit f rf rf frequency range 40 44 ghz f lo lo frequency range 9.5 11.5 ghz g c conversion gain @min. attenuation 5 db ? lo lo input power 1 dbm nf noise figure at gain max noise figure all case 13 27 db o ip3 output ip3@ min. attenuation output ip3@ max. attenuation 16 4 dbm rl rf & lo return loss 12 db 4 x f lo _lk 4 x lo leakage on rf port @min. att. - 5 dbm dx, da lo multiplier, buffer and rf amplifier biasing 4 v gm mixer dc gate biasing - 0.6 v g3 lo buffer gate biasing - 0.3 v gx multiplier gate biasing - 1.2 v ga rf amplifier gate biasing - 0.5 v at attenuation voltage control - 1.5 0.5 v id drain current 250 ma electrostatic discharge sensitive device observe handling precautions! these values are representative of chip on board measurements with a n external 180 hybrid balun between if & ifb. absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit dx, da lo multiplier, buffer and rf a mplifier biasing 4.5 v id drain bias current 310 ma g3, ga amplifier gate biasing - 2; +0.6 v gx , gm multiplier and mixer gate biasing - 2 ; +0.6 v at attenuation voltage control - 2 v p _lo maximum peak lo input power overdrive (2) 10 dbm pin _ rf maximu m peak rf input power overdrive (2) 1 7 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +155 c rth thermal resistance, tback side = +85c , ptotal = 1 w 73 c/w (1) operation of this device above anyone of these parameters may cause permanent damage (2) duration < 1s
40 - 44ghz up converter chu2299 - 99f ref. : dschu22992019 - 19 jan 12 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical chip on board measurements in temperature dx = da = 4v, ga = - 0.5v, gm = - 0.6v, g3 = - 0.3v, gx = - 1.2v, p_lo = 1dbm. these values are representative of onbo ard measurements as defined on the paragraph evaluation mother board. the losses are de conversion gain versus rf frequency & temperature rf= 4lo+if; if = 2ghz; at = - 1.5v conversion gain versus rf frequency & temperature rf= 4lo - if; if = 2ghz; at = - 1.5v 0 1 2 3 4 5 6 7 8 34 36 38 40 42 44 46 rf_frequency (ghz) conversion gain (db) - 40 c + 85 c + 25 c -4 -2 0 2 4 6 8 38 40 42 44 46 48 50 rf_frequency (ghz) conversion gain (db) - 40 c + 85 c + 25 c
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical chip on board measurements in temperature dx = da = 4v, ga = - 0.5v, gm = - 0.6v, g3 = - 0.3v, gx = - 1.2v, p_lo = 1dbm. conversion gain versus rf frequency & attenuation rf = 4lo+if; if = 2 ghz output ip3 versus lo frequency at max. gain rf = 4lo+/ - if; if = 2ghz; pin = - 16dbm - 24 - 20 - 16 - 12 - 8 - 4 0 4 8 38 40 42 44 46 48 50 conversion gain (db) rf_frequency (ghz) at= - 1.5 v at= - 0.7 v at= - 0.5 v at= - 0.3 v at= 0 v 6 8 10 12 14 16 18 20 22 24 26 9,5 10 10,5 11 11,5 12 lo_frequency (ghz) output ip3 (dbm) -40 c - inf +85 c - inf +25 c - inf -40 c - sup +85 c - sup +25 c - sup
40 - 44ghz up converter chu2299 - 99f ref. : dschu22992019 - 19 jan 12 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical chip on board measurements in temperature dx = da = 4v, ga = - 0.5v, gm = - 0.6v, g3 = - 0.3v, gx = - 1.2v, p_lo = 1dbm. imd3 versus input power & attenuation rf = 4lo - if; i f = 2 g hz , lo = 10.6 ghz , tamb = +25c 4lo power leakage on rf port rf = 4lo+if; if = 2ghz 20 30 40 50 60 70 80 90 100 -20 -15 -10 -5 0 5 input power 2tones (dbm) imd3 (db) at= -1.5 v at= -0.6 v at= 0 v -25 -20 -15 -10 -5 0 9 9,5 10 10,5 11 11,5 12 lo_frequency (ghz) 4lo power (dbm) - 40 c + 85 c + 25 c
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical chip on board measurements tamb = +25c, dx = da = 4v, ga = - 0.5v, gm = - 0.6v, g3 = - 0.3v, gx = - 1.2v, p_lo = 1dbm. rf & lo return loss ( in the con nectors plan) rf = 4lo - if; if = 2 ghz , lo = 10.6 ghz -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) return loss (db) lo return loss rf return loss
40 - 44ghz up converter chu2299 - 99f ref. : dschu22992019 - 19 jan 12 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 100 m, units: m, tol:+/ - 35 m dc pads = 92x92 m, rf pads = 178x114 m pin number pin name description 1 rf_out rf output 2 ga rf buffer gate voltage 3 at attenuation control voltage 4 da rf buffer drain voltage 5 dx multiplier & lo buffer drain voltage 6 gx multiplier gate voltage 7 g3 buffer gate voltage 8 gm mixer gate voltage 9, 10 if & ifb if in puts 11 lo_in lo input recommended biasing pin name pin number parameter nominal value gm 8 mixer gate voltage - 0.6v g3 7 buffer gate voltage - 0.3v gx 6 x4 gate voltage - 1.2v ga 2 rf amplifier gate voltage - 0.5v dx 5 x4 drain voltage 4v da 4 rf amplifier drain voltage 4v at 3 attenuation con trol voltage - 1.5v to +0.5v
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 chip assembly note : supply feed should be capacitively bypassed. 25m diameter gold wire is recommended if & ifb from 180 balun lo input rf output capacitors 120pf dc suply
40 - 44ghz up converter chu2299 - 99f ref. : dschu22992019 - 19 jan 12 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board based on typically ro4003 / 8 mils or equivalent. decoupling capacitors of 10 nf ? ? 180 hybrid balun: 2 - 2.5 ghz
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic lo multiplier and buffers: 4v, 105ma rf amplifier: 4v, 150ma dx 150 ? lo 20 ? gx 2 k ? x2 multiplier lo amplifier 30 ma 20 ? 200 ? 50 ? 200 ? 70 ? x2 multiplier 200 ? 40 ? g3 4lo amplifier 15 ma 30 ma 30 ma 11.3 ? 112 ? 11.3 ? dx 150 ? lo 20 ? gx 2 k ? x2 multiplier lo amplifier 30 ma 20 ? 200 ? 50 ? 200 ? 70 ? x2 multiplier 200 ? 40 ? g3 4lo amplifier 15 ma 30 ma 30 ma 11.3 ? 112 ? 11.3 ? gm 500 ? 500 ? if i if q mixer 500 ? gm 500 ? 500 ? if i if q mixer 500 ? 35 ma da 115 ? 11.5 ? 55 ma 115 ? 6.8 ? 60 ma 65 ? 4.5 ? 1.7 ? 3 ? ga rf 35 ma da 115 ? 11.5 ? 55 ma 115 ? 6.8 ? 60 ma 65 ? 4.5 ? 1.7 ? 3 ? ga rf
40 - 44ghz up converter chu2299 - 99f ref. : dschu22992019 - 19 jan 12 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes
chu229 9 - 99f 40 - 44ghz up converter ref. : dschu22992019 - 19 jan 12 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 avail able at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the dir ectives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . orderi ng information chip form : chu2299 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of us e of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specif ications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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