- + 2.2 0.2 3.7 0.35 22.3 0.3 r 1. 9 t y p . ac 7.9 0.2 2.4 0.2 1.2 0.15 5.0 0.3 1.9 0.3 3.8 0.2 18.7 0.2 18.3 0.5 0.5 0.15 2.5 0.2 4 45 ideal for printed circuit board reliable low cost construction utilizing molded plas tic technique plastic materrial has u/l flammability classification 94v-o maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. gbu 4d gbu 4g gbu 4j gbu 4k gbu 4m units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard tc=100 output current @t a =40 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load maximum instantaneous forw ard voltage at 2.0 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a =125 typical junction capacitance per leg (note 3) c j pf typical thermal resistance per leg (note 2) r ja (note 1) r jc operating junction temperature range t j storage temperature range t stg note: 1. unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) ai. plate. - 55 ---- + 150 - 55 ---- + 150 i r 4.2 /w 100 45 22.0 a 100 70 voltage range: 50 --- 1000 v current: 4.0 a 35 50 gbu i fsm a 5.0 mounting position: any i f(av) 4.0 3.0 3. measured at 1.0 mhz and applied rev erse v oltage of 4.0 v olts. gbu 4a gbu 4b 50 100 1.0 2. units mounted on p.c.b. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length. 500.0 150.0 dimensions in millimeters glass passivated chip junctions (note 1) (note 2) gbu4a-gbu4m silicon bridge rectifiers features http://www.luguang.cn mail:lge@luguang.cn
.1 1 100 10 10 1 100 .01 .1 .8 1 1.2 1.4 1.6 0.1 1.0 10 t j =25 pulse width =300us .4 .6 100 .01 10 0 40 60 20 10080 t j =25 0.1 1.0 .01 t j =125 100 500 0 1.0 01 0 0 4.0 150 50 3.0 2.0 30 120 100 150 10 t j =t j max. single sine-wave (jedec method) 1 60 90 1.0 cycle fi g. 3 -- maximum non-repetitive peak forward peak forward surge current, amperes number of cycles at 60hz average forward current, amperes temperature, durge current junction capacitance, pf reverse voltage, volts fi g. 5 -- typical juncti on capaci tance per leg fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts instantaneous forward current, fi g. 2 -- typi cal forward characteristi c fi g. 1 -- derati ng curve for output rrecti fi ed current amperes t, heating time, sec. fi g. 6 -- typi cal transi ent thermal impedance /w instantaneous reverse current, micro amperes percent of rated peak reverse voltage transient thermal impedance, 1 100 10 10 100 .1 f=1.0 mhz vsig=50mvp-p 50-400v 600-1000v 40 4 t j =25 1000 gbu4a-gbu4m silicon bridge rectifiers ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
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