document number: 93090 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-aug-08 1 hexfred ? ultrafast soft recovery diode, 30 a hfa30pb120 vishay high power products features ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? guaranteed avalanche ? specified at operating conditions ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description hfa30pb120 is a state of t he art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techni ques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 1200 v and 30 a continuous current, the hfa30pb120 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to ?snap-off? during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred hfa30pb120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary v r 1200 v v f at 30 a at 25 c 4.1 v i f(av) 30 a t rr (typical) 47 ns t j (maximum) 150 c q rr (typical) 120 nc di (rec)m /dt (typical) at 125 c 240 a/s i rrm (typical) 4.7 a to-247ac modified base common cathode 2 13 anode 2 anode 1 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 30 a single pulse forward current i fsm 120 maximum repetitive forward current i frm 90 maximum power dissipation p d t c = 25 c 350 w t c = 100 c 140 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93090 2 revision: 25-aug-08 hfa30pb120 vishay high power products hexfred ? ultrafast soft recovery diode, 30 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 30 a see fig. 1 -2.44.1 i f = 60 a - 3.1 5.7 i f = 30 a, t j = 125 c - 2.3 4.0 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.340 a t j = 125 c, v r = 0.8 x v r rated - 1.1 4000 junction capacitance c t v r = 200 v see fig. 3 - 50 75 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 47 - ns t rr1 t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v - 110 170 t rr2 t j = 125 c - 170 260 peak recovery current see fig. 6 i rrm1 t j = 25 c - 10 15 a i rrm2 t j = 125 c - 16 24 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 650 980 nc q rr2 t j = 125 c - 1540 2310 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 270 - a/s di (rec)m /dt2 t j = 125 c - 240 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc - - 0.36 c/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.50 - weight -2.0 - g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247 ac modified (jedec) hfa30pb120
document number: 93090 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-aug-08 3 hfa30pb120 hexfred ? ultrafast soft recovery diode, 30 a vishay high power products fig. 1 - typical forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics v f , forward voltage drop (v) i f , instantaneous forward current (a) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 1 10 100 tj = 25c tj = 125c tj = 175c 200 400 600 800 1000 1200 reverse voltage - v r (v) 0.1 1 10 r e v e r s e c u r r e n t - i r ( a ) t j = 150c t j = 125c t j = 25c 1 10 100 1000 reverse voltage - v r (v) 10 100 1000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.234 0.000100 0.069 0.000434 0.056 0.002202 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93090 4 revision: 25-aug-08 hfa30pb120 vishay high power products hexfred ? ultrafast soft recovery diode, 30 a fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) 100 150 200 250 300 350 400 450 500 di f /dt (a/s) 0 25 50 75 100 125 150 175 200 225 250 275 300 t r r ( n s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 60a i f = 30a i f = 15a 100 150 200 250 300 350 400 450 500 di f /dt (a/s) 0 5 10 15 20 25 30 35 i r r m ( a ) v r = 390 v t j = 25 c _____ t j = 125 c ---------- i f = 60 a i f = 30 a i f = 15 a 100 200 300 400 500 di f /dt (a/s) 0 500 1000 1500 2000 2500 3000 q r r ( n c ) v r = 390v t j = 25c _____ t j = 125 c ---------- i f = 60a i f = 30a i f = 15a 100 150 200 250 300 350 400 450 500 di f /dt (a/s) 0 100 200 300 400 500 600 700 800 900 d i ( r e c ) m / d t ( a / s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f 15 a i f = 60 a i f = 30 a
document number: 93090 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-aug-08 5 hfa30pb120 hexfred ? ultrafast soft recovery diode, 30 a vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions fig. 11 - avalanche test circuit and waveforms irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr v (aval) v r(rated) i l(pk) decay time current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 50 v l = 100 h
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93090 6 revision: 25-aug-08 hfa30pb120 vishay high power products hexfred ? ultrafast soft recovery diode, 30 a ordering information table 1 - hexfred ? family 2 - process designator: a = electron irradiated b = platinum diffused 3 - current rating (30 = 30 a) 4 - package outline (pb = to-247, 2 pins) 5 - voltage rating (120 = 1200 v) 6 - none = standard production pbf = lead (pb)-free device code 5 13 24 6 hf a 30 pb 120 - links to related documents dimensions http://www.vishay.com/doc?95253 part marking information http://www.vishay.com/doc?95255 spice model http://www.vishay.com/doc?95358
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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